Combined anneal and selective deposition process

Patent metadata

Field	Value
Publication number	US-10741394-B2
Application number	US-201916254841-A
Country	US
Kind code	B2
Filing date	Jan 23, 2019
Priority date	Apr 18, 2016
Publication date	Aug 11, 2020
Grant date	Aug 11, 2020

Abstract

A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.

First claim

What is claimed is:

1. A method of selectively forming a film comprising:
providing a substrate for processing in a reaction chamber, the substrate having a polymer layer disposed on the substrate;
performing an annealing step on the substrate; and
performing a film deposition by alternating exposure of the substrate to a first precursor and a second precursor, the film deposition being configured to enable infiltration of a material into the polymer layer, wherein an excess of the first precursor and the second precursor are alternatingly purged from the reaction chamber;
wherein a film forms on the polymer from the material; and
wherein the annealing step and the film deposition are performed without intervening exposure to ambient air.

2. The method of claim 1 , wherein during the annealing step, a temperature of the reaction chamber ranges between 100° C. and 400° C.

3. The method of claim 2 , wherein during the annealing step, the temperature of the reaction chamber ranges between 200° C. and 300° C.

4. The method of claim 1 , wherein during the film deposition, the temperature of the reaction chamber ranges between 70° C. and 90° C.

5. The method of claim 1 , wherein the polymer comprises at least one of:
poly(methyl methacrylate) (PMMA), polystyrene (PS), poly(styrene-block-methyl methacrylate) (PS-b-PMMA), or an extreme UV photoresist.

6. The method of claim 5 , wherein providing the substrate comprises providing a second polymer layer comprising PS, wherein the polymer layer comprises PMMA and the material infiltrates the polymer layer and not the second polymer layer.

7. The method of claim 1 , further comprising cyclically repeating exposure to the first precursor, purging excess first precursor, exposure to the second precursor, and purging excess second precursor in order to form a film of a greater thickness with each repetition.

8. The method of claim 1 , wherein the annealing step and the film deposition take place within a single reaction chamber.

9. The method of claim 1 , wherein the annealing step is configured to induce self-assembly within the polymer layer.

10. A method of selectively forming a film comprising: providing a substrate for processing in a reaction chamber, the substrate having a polymer layer disposed on the substrate; performing an annealing step on the substrate; and alternatingly exposing the substrate to a first reactant and a second reactant, wherein a material from the alternating exposure infiltrates into the polymer layer, and wherein the annealing step and a film deposition are performed without intervening exposure to ambient air.

11. The method of claim 10 , wherein alternatingly exposing is configured to deposit at least one of: aluminum oxide (Al 2 O 3 ), silicon dioxide (SiO 2 ), silicon nitride (SiN), silicon oxynitride (SiON), silicon carbonitride (SiCN), aluminum nitride (AlN), titanium nitride (TiN), tantalum nitride (TaN), tungsten (W), cobalt (Co), titanium dioxide (TiO 2 ), tantalum oxide (Ta 2 O 5 ), zirconium dioxide (ZrO 2 ), or hafnium dioxide (HfO 2 ).

12. The method of claim 10 , wherein providing the substrate comprises providing a second polymer layer of a different composition from the polymer layer.

13. The method of claim 12 , wherein the polymer comprises at least one of:
poly(methyl methacrylate) (PMMA), polystyrene (PS), poly(styrene-block-methyl methacrylate) (PS-b-PMMA), or an extreme UV photoresist.

14. The method of claim 13 , wherein the polymer layer comprises PMMA and the second polymer layer comprises PS and the material infiltrates into the polymer layer and not the second polymer layer.

15. The method of claim 10 , further comprising purging reactant with an inert gas between alternating exposures to the first and second reactants.

16. The method of claim 10 , wherein the reaction chamber is a batch system for processing substrates.

17. The method of claim 10 , wherein the reaction chamber is configured to process multiple substrates.

18. The method of claim 10 , wherein the temperature of the annealing step is at least 25° C. higher than the temperature of the film deposition.

19. The method of claim 18 , wherein the temperature of the annealing step is 25°−300° C. higher than the temperature of the film deposition.

20. The method of claim 19 , wherein the temperature of the annealing step is 100°−300° C. higher than the temperature of the film deposition.

Assignees

• Asm Ip Holding Bv
• Imec Vzw
• Univ Leuven Kath

Inventors

• Maes Jan Willem
• Knaepen Werner
• Gronheid Roel
• Singh Arjun

Classifications

• H10P76/4085 Primary

  characterised by the processes involved to create the masks · CPC title

• H10P76/4083

  characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P76/204

  of organic photoresist masks · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title