Ruggedized solder mask material

Patent metadata

Field	Value
Publication number	US-10739679-B2
Application number	US-201916458930-A
Country	US
Kind code	B2
Filing date	Jul 1, 2019
Priority date	Nov 21, 2017
Publication date	Aug 11, 2020
Grant date	Aug 11, 2020

Abstract

Disclosed herein are solder mask formulations that include a liquid photo imagable solution and a solution of functionalized diamondoids. Also disclosed are semiconductor fabrication methods that include applying a described solder mask formulation to a semiconductor device.

First claim

What is claimed is:

1. A solder mask formulation, comprising:
a liquid photo imagable solution; and
a solution of functionalized diamondoids, wherein a size of a diamondoid moiety of a functionalized diamondoid of the solution of functionalized diamondoids is between approximately 1 nanometer (nm) and approximately 50 microns.

2. The solder mask formulation of claim 1 , wherein the functionalized diamondoid has an acrylate moiety attached thereto, wherein the acrylate includes a diacrylate, and wherein the diacrylate includes trimethylolpropane diacrylate.

3. The solder mask formulation of claim 1 , wherein the functionalized diamondoids include a diamondoid having an ether moiety attached thereto.

4. The solder mask formulation of claim 3 , wherein the ether includes trimethylolpropane diglycidyl ether.

5. The solder mask formulation of claim 1 , wherein the functionalized diamondoids are configured to crosslink with a resin formed by the liquid photo imagable solution and other functionalized diamondoids upon exposure to actinic radiation, and wherein a matrix resulting from the crosslinking includes an interpenetrating polymer network.

6. The solder mask formulation of claim 5 , wherein the formulation is configured to have a greater chemical resistance based on the interpenetrating polymer network than a chemical resistance of a formulation that lacks the solution of functionalized diamondoids.

7. The solder mask formulation of claim 5 , wherein the formulation is configured to have a greater abrasion resistance based on the interpenetrating polymer network than a chemical resistance of a formulation that lacks the solution of functionalized diamondoids.

8. The solder mask formulation of claim 1 , wherein the functionalized diamondoids represent between approximately 10% and approximately 50% by weight of the solder mask formulation.

9. A solder mask formulation comprising:
a photoinitiator representing approximately 0% to approximately 30% by weight of the solder mask formulation;
a functionalized diamondoid solution representing approximately 10% to approximately 50% by weight of the solder mask formulation, wherein a size of a diamondoid moiety of a functionalized diamondoid of the functionalized diamondoid solution is between approximately 1 nanometer (nm) and approximately 50 microns;
an ether representing approximately 10% to approximately 30% by weight of the solder mask formulation;
an aromatic representing approximately 0% to approximately 10% by weight of the solder mask formulation;
a sulfate representing approximately 10% to approximately 30% by weight of the solder mask formulation;
an acetate representing approximately 0% to approximately 10% by weight of the solder mask formulation; and
one or more acrylates each representing approximately 1% to approximately 30% by weight of the solder mask formulation.

10. The solder mask formulation of claim 9 , wherein the functionalized diamondoid has an acrylate moiety attached thereto, wherein the acrylate includes a diacrylate, and wherein the diacrylate includes trimethylolpropane diacrylate.

11. The solder mask formulation of claim 9 , wherein the functionalized diamondoids are configured to crosslink with a resin formed by the liquid photo imagable solution and other functionalized diamondoids upon exposure to actinic radiation, and wherein a matrix resulting from the crosslinking includes an interpenetrating polymer network.

12. The solder mask formulation of claim 11 , wherein the formulation is configured to have a greater chemical resistance based on the interpenetrating polymer network than a chemical resistance of a formulation that lacks the solution of functionalized diamondoids.

13. The solder mask formulation of claim 11 , wherein the formulation is configured to have a greater abrasion resistance based on the interpenetrating polymer network than a chemical resistance of a formulation that lacks the solution of functionalized diamondoids.

14. A semiconductor fabrication method comprising:
applying a solder mask formulation to a semiconductor device, the solder mask formulation comprising:
a liquid photo imagable solution; and
a solution of functionalized diamondoid, wherein a size of a diamondoid moiety of a functionalized diamondoid of the functionalized diamondoid solution is between approximately 1 nanometer (nm) and approximately 50 microns.

15. The semiconductor fabrication method of claim 14 , wherein the functionalized diamondoids include a diamondoid having an ether moiety attached thereto.

16. The semiconductor fabrication method of claim 15 , wherein the ether includes trimethylolpropane diglycidyl ether.

17. The semiconductor fabrication method of claim 14 , wherein the functionalized diamondoids are configured to crosslink with a resin formed by the liquid photo imagable solution and other functionalized diamondoids upon exposure to actinic radiation, and wherein a matrix resulting from the crosslinking includes an interpenetrating polymer network.

18. The semiconductor fabrication method of claim 17 , wherein the formulation is configured to have a greater chemical resistance based on the interpenetrating polymer network than a chemical resistance of a formulation that lacks the solution of functionalized diamondoids.

19. The semiconductor fabrication method of claim 17 , wherein the formulation is configured to have a greater abrasion resistance based on the interpenetrating polymer network than a chemical resistance of a formulation that lacks the solution of functionalized diamondoids.

20. The semiconductor fabrication method of claim 14 , wherein the functionalized diamondoids represent between approximately 10% and approximately 50% by weight of the solder mask formulation.

Assignees

• IBM

Inventors

• Kelly Matthew
• Jeanson Mark
• Kuczynski Joseph

Classifications

• H10W70/098

  Applying pastes or inks, e.g. screen printing (H10W70/095 takes precedence) · CPC title

• H10W70/69

  Insulating materials thereof · CPC title

• B23K35/224 Primary

  Anti-weld compositions; Braze stop-off compositions · CPC title

• G03F7/26

  Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) · CPC title

• B23K35/3613

  Polymers, e.g. resins · CPC title