Coating device and coating method

US10734584B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10734584-B2
Application numberUS-201716307110-A
CountryUS
Kind codeB2
Filing dateJun 8, 2017
Priority dateJun 14, 2016
Publication dateAug 4, 2020
Grant dateAug 4, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A device for depositing a layer onto one or more substrates includes a process chamber; a gas inlet element, which can be temperature-controlled, for delivering a process gas into the process chamber in a flow direction towards the substrates; a shielding element, arranged directly after the gas inlet element in the flow direction and which, when in a shielding position, thermally insulates the gas inlet element and the substrates from each other; mask holders arranged after the shielding element in the flow direction, each for holding a mask; and substrate holders for holding at least one of the substrates, each substrate holder corresponding to one of the plurality of mask holders. For each of the substrate holders, a displacement element is provided for displacing the substrate holder from a position distant from the mask holder to a position adjacent to the mask holder.

First claim

Opening claim text (preview).

What is claimed is: 1. A device for depositing a layer onto one or more substrates ( 10 ), the device comprising: a process chamber ( 2 ) arranged in a reactor housing ( 1 ); at least one temperature-controlled gas inlet element ( 3 ) for introducing a process gas into the process chamber ( 2 ) in a flow direction (S) toward the one or more substrates ( 10 ), wherein the process gas is discharged from a gas discharge surface of the at least one gas inlet element ( 3 ); at least one shielding element ( 6 ) that, when located in a shielding position, is arranged directly downstream of the at least one gas inlet element ( 3 ) with reference to the flow direction (S) and thermally insulates the at least one gas inlet element ( 3 ) and the one or more substrates ( 10 ) from one another; mask holders ( 7 , 7 ′) arranged downstream of the at least one shielding element ( 6 ) with respect to the flow direction (S) and respectively are configured to hold a mask ( 8 , 8 ′); substrate holders ( 9 , 9 ′) that respectively correspond to one or more of the mask holders ( 7 , 7 ′) and are arranged downstream of the masks ( 8 , 8 ′) with respect to the flow direction (S), wherein said substrate holders ( 9 , 9 ′) are physically separated from one another and are configured to hold at least one of the one or more substrates ( 10 ); and displacement elements ( 11 , 11 ′) assigned to each of the substrate holders ( 9 , 9 ′) and configured to displace the substrate holders ( 9 , 9 ′) from a first position distant from the mask holders ( 7 , 7 ′), in which the one or more substrates ( 10 , 10 ′) are loaded on and unloaded from the substrate holders ( 9 , 9 ′), to a second position adjoining the mask holders ( 7 , 7 ′), in which at least one of the one or more substrates ( 10 , 10 ′) arranged on the substrate holders ( 9 , 9 ′) is coated while in contact with one or more of the masks ( 8 , 8 ′), wherein the at least one shielding element ( 6 ) is a unitary shielding element or multiple shielding elements and is displaceable between the shielding position and a storage space ( 17 ), wherein the storage space ( 17 ) is formed as a slot in a wall of the reactor housing ( 1 ), the slot having a slot height that is less than a distance between the gas discharge surface of the at least one gas inlet element ( 3 ) and the mask holders ( 7 , 7 ′), wherein, while the at least one shielding element ( 6 ) is located in the shielding position, the at least one shielding element ( 6 ) is arranged between all of the mask holders ( 7 , 7 ′) and an entirety of the gas discharge surface of the at least one gas inlet element ( 3 ), and wherein, while the at least one shielding element ( 6 ) is located in the storage space ( 17 ), the one or more substrates ( 10 , 10 ′) are coated. 2. The device of claim 1 , wherein the substrate holders ( 9 , 9 ′) are individually temperature-controlled and individually displaced. 3. The device of claim 1 , wherein the at least one gas inlet element ( 3 ) comprises a heating element ( 12 ) and the substrate holders ( 9 , 9 ′) comprise a cooling element ( 13 , 13 ′). 4. The device of claim 1 , wherein the at least one gas inlet element ( 3 ) includes multiple gas inlet elements ( 3 , 3 ′) arranged adjacent to one another. 5. A device for depositing a layer onto one or more substrates ( 10 ), the device comprising: a process chamber ( 2 ) arranged in a reactor housing ( 1 ); at least one temperature-controlled gas inlet element ( 3 ) for introducing a process gas into the process chamber ( 2 ) in a flow direction (S) toward the one or more substrates ( 10 ); at least one shielding element ( 6 ) that, when located in a shielding position, is arranged directly downstream of the at least one gas inlet element ( 3 ) with reference to the flow direction (S) and thermally insulates the at least one gas inlet element ( 3 ) and the one or more substrates ( 10 ) from one another; mask holders ( 7 , 7 ′) arranged downstream of the at least one shielding element ( 6 ) with respect to the flow direction (S) and respectively are configured to hold a mask ( 8 , 8 ′); substrate holders ( 9 , 9 ′) that respectively correspond to one or more of the mask holders ( 7 , 7 ′) and are arranged downstream of the masks ( 8 , 8 ′) with respect to the flow direction (S), wherein said substrate holders ( 9 , 9 ′) are physically separated from one another and are configured to hold at least one of the one or more substrates ( 10 ); displacement elements ( 11 , 11 ′) assigned to each of the substrate holders ( 9 , 9 ′) and configured to displace the substrate holders ( 9 , 9 ′) from a first position distant from the mask holders ( 7 , 7 ′), in which the one or more substrates ( 10 , 10 ′) are loaded on and unloaded from the substrate holders ( 9 , 9 ′), to a second position adjoining the mask holders ( 7 , 7 ′), in which at least one of the one or more substrates ( 10 , 10 ′) arranged on the substrate holders ( 9 , 9 ′) is coated while in contact with one or more of the masks ( 8 , 8 ′); and adjusting devices ( 14 , 14 ′) for individually adjusting a position of each of the mask holders ( 7 , 7 ′) relative to the substrate holder ( 9 , 9 ′) assigned thereto, wherein the at least one shielding element ( 6 ) is a unitary shielding element or multiple shielding elements and is displaceable between the shielding position and a storage space ( 17 ), wherein, while the at least one shielding element ( 6 ) is located in the shielding position, the at least one shielding element ( 6 ) is arranged between all of the mask holders ( 7 , 7 ′) and all gas discharge surfaces of the at least one gas inlet element ( 3 ), and wherein, while the at least one shielding element ( 6 ) is located in the storage space ( 17 ), the one or more substrates ( 10 , 10 ′) are coated. 6. A method for operating a device comprising a process chamber ( 2 ) arranged in a reactor housing ( 1 ); at least one temperature-controlled gas inlet element ( 3 ) for introducing a process gas into the process chamber ( 2 ) in a flow direction (S) toward the one or more substrates ( 10 ); at least one shielding element ( 6 ) that, when located in a shielding position, is arranged directly downstream of the at least one gas inlet element ( 3 ) with reference to the flow direction (S) and thermally insulates the at least one gas inlet element ( 3 ) and the one or more substrates ( 10 ) from one another; mask holders ( 7 , 7 ′) arranged downstream of the at least one shielding element ( 6 ) with respect to the flow direction (S) and respectively are configured to hold a mask ( 8 , 8 ′); substrate holders ( 9 , 9 ′) that respectively correspond to one or more of the mask holders ( 7 , 7 ′) and are arranged downstream of the masks ( 8 , 8 ′) with respect to the flow direction (S), wherein said substrate holders ( 9 , 9 ′) are physically separated from one another and are configured to hold at least one of the one or more substrates ( 10 ); and displacement elements ( 11 , 11 ′) assigned to each of the substrate holders ( 9 , 9 ′) and configured to displace the substrate holders ( 9 , 9 ′) from a first position distant from the mask holders ( 7 , 7 ′), in which the one or more substrates ( 10 , 10 ′) are loaded on and unloaded from the substrate holders ( 9 , 9 ′), to a second position adjoining the mask holders ( 7 , 7 ′), in which at least one of the one or more substrates ( 10 , 10 ′) arranged on the substrate holders ( 9 , 9 ′) is coated while in contact with one or more of the masks ( 8 , 8 ′), wherein the at least one shielding element ( 6 ) is a unitary shielding element or multiple shielding elements and is displaceable between the shielding position and a storage space ( 17 ), the method comprising: loading the

Assignees

Inventors

Classifications

  • C23C14/042Primary

    using masks · CPC title

  • Thermal treatment, e.g. annealing in the presence of a solvent vapour · CPC title

  • using selective deposition, e.g. using a mask · CPC title

  • Cooled nozzles · CPC title

  • Heated nozzles · CPC title

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What does patent US10734584B2 cover?
A device for depositing a layer onto one or more substrates includes a process chamber; a gas inlet element, which can be temperature-controlled, for delivering a process gas into the process chamber in a flow direction towards the substrates; a shielding element, arranged directly after the gas inlet element in the flow direction and which, when in a shielding position, thermally insulates the…
Who is the assignee on this patent?
Aixtron Se
What technology area does this patent fall under?
Primary CPC classification C23C14/042. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Aug 04 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).