Multicathode deposition system and methods
US-12051576-B2 · Jul 30, 2024 · US
US10734584B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10734584-B2 |
| Application number | US-201716307110-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 8, 2017 |
| Priority date | Jun 14, 2016 |
| Publication date | Aug 4, 2020 |
| Grant date | Aug 4, 2020 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A device for depositing a layer onto one or more substrates includes a process chamber; a gas inlet element, which can be temperature-controlled, for delivering a process gas into the process chamber in a flow direction towards the substrates; a shielding element, arranged directly after the gas inlet element in the flow direction and which, when in a shielding position, thermally insulates the gas inlet element and the substrates from each other; mask holders arranged after the shielding element in the flow direction, each for holding a mask; and substrate holders for holding at least one of the substrates, each substrate holder corresponding to one of the plurality of mask holders. For each of the substrate holders, a displacement element is provided for displacing the substrate holder from a position distant from the mask holder to a position adjacent to the mask holder.
Opening claim text (preview).
What is claimed is: 1. A device for depositing a layer onto one or more substrates ( 10 ), the device comprising: a process chamber ( 2 ) arranged in a reactor housing ( 1 ); at least one temperature-controlled gas inlet element ( 3 ) for introducing a process gas into the process chamber ( 2 ) in a flow direction (S) toward the one or more substrates ( 10 ), wherein the process gas is discharged from a gas discharge surface of the at least one gas inlet element ( 3 ); at least one shielding element ( 6 ) that, when located in a shielding position, is arranged directly downstream of the at least one gas inlet element ( 3 ) with reference to the flow direction (S) and thermally insulates the at least one gas inlet element ( 3 ) and the one or more substrates ( 10 ) from one another; mask holders ( 7 , 7 ′) arranged downstream of the at least one shielding element ( 6 ) with respect to the flow direction (S) and respectively are configured to hold a mask ( 8 , 8 ′); substrate holders ( 9 , 9 ′) that respectively correspond to one or more of the mask holders ( 7 , 7 ′) and are arranged downstream of the masks ( 8 , 8 ′) with respect to the flow direction (S), wherein said substrate holders ( 9 , 9 ′) are physically separated from one another and are configured to hold at least one of the one or more substrates ( 10 ); and displacement elements ( 11 , 11 ′) assigned to each of the substrate holders ( 9 , 9 ′) and configured to displace the substrate holders ( 9 , 9 ′) from a first position distant from the mask holders ( 7 , 7 ′), in which the one or more substrates ( 10 , 10 ′) are loaded on and unloaded from the substrate holders ( 9 , 9 ′), to a second position adjoining the mask holders ( 7 , 7 ′), in which at least one of the one or more substrates ( 10 , 10 ′) arranged on the substrate holders ( 9 , 9 ′) is coated while in contact with one or more of the masks ( 8 , 8 ′), wherein the at least one shielding element ( 6 ) is a unitary shielding element or multiple shielding elements and is displaceable between the shielding position and a storage space ( 17 ), wherein the storage space ( 17 ) is formed as a slot in a wall of the reactor housing ( 1 ), the slot having a slot height that is less than a distance between the gas discharge surface of the at least one gas inlet element ( 3 ) and the mask holders ( 7 , 7 ′), wherein, while the at least one shielding element ( 6 ) is located in the shielding position, the at least one shielding element ( 6 ) is arranged between all of the mask holders ( 7 , 7 ′) and an entirety of the gas discharge surface of the at least one gas inlet element ( 3 ), and wherein, while the at least one shielding element ( 6 ) is located in the storage space ( 17 ), the one or more substrates ( 10 , 10 ′) are coated. 2. The device of claim 1 , wherein the substrate holders ( 9 , 9 ′) are individually temperature-controlled and individually displaced. 3. The device of claim 1 , wherein the at least one gas inlet element ( 3 ) comprises a heating element ( 12 ) and the substrate holders ( 9 , 9 ′) comprise a cooling element ( 13 , 13 ′). 4. The device of claim 1 , wherein the at least one gas inlet element ( 3 ) includes multiple gas inlet elements ( 3 , 3 ′) arranged adjacent to one another. 5. A device for depositing a layer onto one or more substrates ( 10 ), the device comprising: a process chamber ( 2 ) arranged in a reactor housing ( 1 ); at least one temperature-controlled gas inlet element ( 3 ) for introducing a process gas into the process chamber ( 2 ) in a flow direction (S) toward the one or more substrates ( 10 ); at least one shielding element ( 6 ) that, when located in a shielding position, is arranged directly downstream of the at least one gas inlet element ( 3 ) with reference to the flow direction (S) and thermally insulates the at least one gas inlet element ( 3 ) and the one or more substrates ( 10 ) from one another; mask holders ( 7 , 7 ′) arranged downstream of the at least one shielding element ( 6 ) with respect to the flow direction (S) and respectively are configured to hold a mask ( 8 , 8 ′); substrate holders ( 9 , 9 ′) that respectively correspond to one or more of the mask holders ( 7 , 7 ′) and are arranged downstream of the masks ( 8 , 8 ′) with respect to the flow direction (S), wherein said substrate holders ( 9 , 9 ′) are physically separated from one another and are configured to hold at least one of the one or more substrates ( 10 ); displacement elements ( 11 , 11 ′) assigned to each of the substrate holders ( 9 , 9 ′) and configured to displace the substrate holders ( 9 , 9 ′) from a first position distant from the mask holders ( 7 , 7 ′), in which the one or more substrates ( 10 , 10 ′) are loaded on and unloaded from the substrate holders ( 9 , 9 ′), to a second position adjoining the mask holders ( 7 , 7 ′), in which at least one of the one or more substrates ( 10 , 10 ′) arranged on the substrate holders ( 9 , 9 ′) is coated while in contact with one or more of the masks ( 8 , 8 ′); and adjusting devices ( 14 , 14 ′) for individually adjusting a position of each of the mask holders ( 7 , 7 ′) relative to the substrate holder ( 9 , 9 ′) assigned thereto, wherein the at least one shielding element ( 6 ) is a unitary shielding element or multiple shielding elements and is displaceable between the shielding position and a storage space ( 17 ), wherein, while the at least one shielding element ( 6 ) is located in the shielding position, the at least one shielding element ( 6 ) is arranged between all of the mask holders ( 7 , 7 ′) and all gas discharge surfaces of the at least one gas inlet element ( 3 ), and wherein, while the at least one shielding element ( 6 ) is located in the storage space ( 17 ), the one or more substrates ( 10 , 10 ′) are coated. 6. A method for operating a device comprising a process chamber ( 2 ) arranged in a reactor housing ( 1 ); at least one temperature-controlled gas inlet element ( 3 ) for introducing a process gas into the process chamber ( 2 ) in a flow direction (S) toward the one or more substrates ( 10 ); at least one shielding element ( 6 ) that, when located in a shielding position, is arranged directly downstream of the at least one gas inlet element ( 3 ) with reference to the flow direction (S) and thermally insulates the at least one gas inlet element ( 3 ) and the one or more substrates ( 10 ) from one another; mask holders ( 7 , 7 ′) arranged downstream of the at least one shielding element ( 6 ) with respect to the flow direction (S) and respectively are configured to hold a mask ( 8 , 8 ′); substrate holders ( 9 , 9 ′) that respectively correspond to one or more of the mask holders ( 7 , 7 ′) and are arranged downstream of the masks ( 8 , 8 ′) with respect to the flow direction (S), wherein said substrate holders ( 9 , 9 ′) are physically separated from one another and are configured to hold at least one of the one or more substrates ( 10 ); and displacement elements ( 11 , 11 ′) assigned to each of the substrate holders ( 9 , 9 ′) and configured to displace the substrate holders ( 9 , 9 ′) from a first position distant from the mask holders ( 7 , 7 ′), in which the one or more substrates ( 10 , 10 ′) are loaded on and unloaded from the substrate holders ( 9 , 9 ′), to a second position adjoining the mask holders ( 7 , 7 ′), in which at least one of the one or more substrates ( 10 , 10 ′) arranged on the substrate holders ( 9 , 9 ′) is coated while in contact with one or more of the masks ( 8 , 8 ′), wherein the at least one shielding element ( 6 ) is a unitary shielding element or multiple shielding elements and is displaceable between the shielding position and a storage space ( 17 ), the method comprising: loading the
using masks · CPC title
Thermal treatment, e.g. annealing in the presence of a solvent vapour · CPC title
using selective deposition, e.g. using a mask · CPC title
Cooled nozzles · CPC title
Heated nozzles · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.