Heterojunction TFETs employing an oxide semiconductor

Patent metadata

Field	Value
Publication number	US-10734513-B2
Application number	US-201515768822-A
Country	US
Kind code	B2
Filing date	Nov 16, 2015
Priority date	Nov 16, 2015
Publication date	Aug 4, 2020
Grant date	Aug 4, 2020

Abstract

Heterojunction tunnel field effect transistors (hTFETs) incorporating one or more oxide semiconductor and a band offset between at least one of a channel material, a source material of a first conductivity type, and drain of a second conductivity type, complementary to the first. In some embodiments, at least one of p-type material, channel material and n-type material comprises an oxide semiconductor. In some embodiments, two or more of p-type material, channel material, and n-type material comprises an oxide semiconductor. In some n-type hTFET embodiments, all of p-type, channel, and n-type materials are oxide semiconductors with a type-II or type-III band offset between the p-type and channel material.

First claim

What is claimed is:

1. A heterojunction tunnel field effect transistor (hTFET), the hTFET comprising:
a channel material separating a p-type material having p-type conductivity from an n-type material having n-type conductivity;
a gate electrode material; and
a gate dielectric material separating the gate electrode material from the channel material, wherein at least one of the p-type material, n-type material, or channel material comprises a metal and oxygen, wherein the p-type material is Ge, GeSn, GaAs, or GaSb, or the n-type material is InAs, and wherein each of the p-type material, n-type material and channel material is amorphous or polycrystalline.

2. The hTFET of claim 1 , wherein the p-type material has a type-II or type-III band offset from the channel material.

3. The hTFET of claim 1 , wherein the gate dielectric comprises an oxide or silicate comprising at least one of Hf, Al, or Ta.

4. The hTFET of claim 3 , wherein the channel material comprises Ge, and the gate dielectric comprises HfO x or HfAlO x .

5. The hTFET of claim 1 , wherein at least two of the p-type material, n-type material, and channel material are oxides.

6. The hTFET of claim 5 , wherein the channel material is an oxide and the gate dielectric comprises Hf.

7. The hTFET of claim 5 , wherein the channel material is a first oxide, and the n-type material comprises the first oxide and a greater donor impurity concentration than is present in the channel material.

8. The hTFET of claim 1 , wherein the substrate comprises CMOS logic circuitry including a plurality of electrically interconnected MOSFETs.

9. A heterojunction tunnel field effect transistor (hTFET), the hTFET comprising:
a channel material separating a p-type material having p-type conductivity from an n-type material having n-type conductivity;
a gate electrode material; and
a gate dielectric material separating the gate electrode material from the channel material,
wherein the p-type material has a type II or type III band offset from the channel material, and each of the p-type material, n-type material, and channel material comprises a metal and oxygen.

10. The hTFET of claim 9 , wherein:
the channel material is a first oxide;
the n-type material comprises the first oxide and a greater concentration of a donor impurity than is present in the channel material; and
the p-type material comprises a second oxide, having a different band gap than the first oxide.

11. The hTFET of claim 10 , wherein each of the first and second oxides comprises at least one of Cu, Zn, Sn, Ti, Ni, Ga, In, Sr, Cr, Co, V, and Mo.

12. The hTFET of claim 10 , wherein:
the second oxide comprises a metal constituent absent from the first oxide;
the second oxide comprises at least one of Cu or Ni; and
the n-type material is an oxide comprising at least one of Zn, Ti, or Sn.

13. The hTFET of claim 9 , wherein:
the p-type material comprises at least one of Cu or Ni;
the n-type material comprises at least one of Zn, Ti, or Sn; and
the channel material comprises at least one of Zn and Sn.

14. The hTFET of claim 13 , wherein at least one of the n-type material, or channel material further comprises at least one of In, Ga, and Al.

15. The hTFET of claim 14 , wherein:
the n-type material is GZO;
the channel material is IGZO; and
the p-type material is CuO x .

16. A 3D integrated circuit (3DIC), comprising:
one or more CMOS circuitry levels, each CMOS circuitry level comprising a plurality MOSFETs; and
one or more hTFET circuitry levels electrically interconnected to the CMOS circuitry levels, wherein at least one of the hTFET circuitry levels comprises the hTFET recited in claim 9 .

17. A 3D integrated circuit (3DIC), comprising:
one or more CMOS circuitry levels, each CMOS circuitry level comprising a plurality MOSFETs; and
one or more hTFET circuitry levels electrically interconnected to the CMOS circuitry levels, wherein at least one of the hTFET circuitry levels comprises a heterojunction tunnel field effect transistor (hTFET), the hTFET comprising: a channel material separating a p-type material having p-type conductivity from an n-type material having n-type conductivity; a gate electrode material; and a gate dielectric material separating the gate electrode material from the channel material, wherein at least one of the p-type material, n-type material, or channel material comprises a metal and oxygen, wherein each of the p-type material, n-type material, or channel material is amorphous.

18. The hTFET of claim 17 , wherein:
the channel material is Ge or SiGe and the gate dielectric comprises Al; or
the channel material is an oxide comprising at least one of Zn and Sn, and the gate dielectric comprises Hf.

19. A 3D integrated circuit (3DIC), comprising:
one or more CMOS circuitry levels, each CMOS circuitry level comprising a plurality MOSFETs; and
one or more heterojunction tunnel field effect transistor (hTFET) circuitry levels electrically interconnected to the CMOS circuitry levels, wherein at least one of the hTFET circuitry levels comprises an hTFET comprising:
a channel material separating a p-type material having p-type conductivity from an n-type material having n-type conductivity;
a gate electrode material; and
a gate dielectric material separating the gate electrode material from the channel material, wherein each of the p-type material, n-type material, or channel material comprises a metal and oxygen.

Assignees

• Intel Corp

Inventors

• Majhi Prashant
• Kavalieros Jack T
• Karpov Elijah V
• Shah Uday
• Pillarisetty Ravi

Classifications

• H10D99/00 Primary

  Subject matter not provided for in other groups of this subclass · CPC title

• H10D62/82

  Heterojunctions · CPC title

• H10D12/211

  Gated diodes · CPC title

• H10D12/021

  of gated diodes, e.g. field-controlled diodes [FCD] · CPC title

• H10D30/60 Primary

  Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence) · CPC title