Microwave plasma generating device for plasma oxidation of SiC

Patent metadata

Field	Value
Publication number	US-10734199-B2
Application number	US-201816224435-A
Country	US
Kind code	B2
Filing date	Dec 18, 2018
Priority date	May 25, 2018
Publication date	Aug 4, 2020
Grant date	Aug 4, 2020

Abstract

A microwave plasma generating device for plasma oxidation of SiC, comprising an outer cavity and a plurality of micro-hole/micro-nano-structured double-coupling resonant cavities disposed in the outer cavity. Each resonant cavity includes a cylindrical cavity. A micro-hole array formed by a plurality of micro-holes is uniformly distributed on a peripheral wall of the cylindrical cavity, a diameter of each of the micro-holes is an odd multiple of wavelength, and an inner wall of the cylindrical cavity has a metal micro-nano structure, the metal micro-nano structure has a periodic dimension of λ/n, where λ is wavelength of an incident wave, and n is refractive index of material of the resonant cavity. The outer cavity is provided with an gas inlet for conveying an oxygen-containing gas into the outer cavity, and the oxygen-containing gas forms an oxygen plasma around the resonant cavities for oxidizing SiC; a stage is disposed under the resonant cavities.

First claim

What is claimed is:

1. A microwave plasma generating device for plasma oxidation of SiC, comprising
an outer cavity and
a plurality of micro-hole/micro-nano-structured double-coupling resonant cavities disposed in the outer cavity,
wherein each of the micro-hole/micro-nano-structured double-coupling resonant cavities includes a cylindrical cavity, and a micro-hole array formed by a plurality of micro-holes is uniformly distributed on a peripheral wall of the cylindrical cavity,
diameter of each of the micro-holes is an odd multiple of wavelength of an incident wave, and
an inner wall of the cylindrical cavity has a metal micro-nano structure, the micro-hole array and the metal micro-nano structure form a double-coupling structure to achieve resonance enhancement and tunability,
the metal micro-nano structure has a periodic dimension of λ/n, where λ is wavelength of the incident wave, and n is refractive index of material of the resonant cavity,
the outer cavity is provided with an gas inlet for conveying an oxygen- containing gas into the outer cavity, and
the oxygen-containing gas forms an oxygen plasma around the micro-hole/ micro-nano-structured double-coupling resonant cavities for oxidizing SiC,
a stage is disposed under the micro-hole/micro-nano-structured double-coupling resonant cavities for supporting a SiC substrate.

2. The microwave plasma generating device according to claim 1 , wherein a circumference of the cylindrical cavity is an integral multiple of ¾ of an operating wavelength, and resonance occurs on a first odd mode.

3. The microwave plasma generating device according to claim 1 , wherein the metal micro-nano structure is a periodically arranged protrusion, recess or grating.

4. The microwave plasma generating device according to claim 1 , wherein the metal micro-nano structure is a grating comprising parallel slits of equal width and equal spacing.

5. The microwave plasma generating device according to claim 1 , wherein the cylindrical cavity is made of mica or ceramic material, and a metal plating layer of the metal micro-nano structure is made of Au or brass.

6. The microwave plasma generating device according to claim 1 , wherein the plurality of the micro-hole/micro-nano-structured double-coupling resonant cavities are arranged in a line and are respectively connected to a microwave generator through a corresponding double-layer coaxial cable.

7. The microwave plasma generating device according to claim 6 , wherein the double- layer coaxial cable wraps a coupling probe, one end of each of the double-layer coaxial cable is connected to the microwave generator, and the other end is inserted into the corresponding micro-hole/ micro-nano-structured double-coupling resonant cavity.

8. The microwave plasma generating device according to claim 1 , wherein the outer cavity is a quartz tube, and the stage is movable up and down and rotatable.

9. The microwave plasma generating device according to claim 1 , wherein a visual observation hole and a pyrometer are provided on the outer cavity adjacent to the stage.

10. The microwave plasma generating device according to claim 1 , wherein a microwave input power of the microwave plasma generating device is continuously adjustable in a range of 800 w-2000 w, and a microwave frequency is adjustable in a range of 2.4-2.5 GHz.

Assignees

• Inst Of Microelectronics Cas

Inventors

• Liu Xinyu
• Tang Yidan
• Wang Shengkai
• Bai Yun
• Yang Chengyue

Classifications

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6308

  of Group IV semiconductors · CPC title

• H10P14/6319

  Formation by plasma treatments, e.g. plasma oxidation of the substrate · CPC title

• H01J37/32256 Primary

  Tuning means · CPC title

• H01J2237/24585

  Other variables, e.g. energy, mass, velocity, time, temperature · CPC title