Charged particle beam device and method for demagnetizing magnetic lens
US-2024274395-A1 · Aug 15, 2024 · US
US10734189B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10734189-B2 |
| Application number | US-201816323418-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 28, 2018 |
| Priority date | Jun 22, 2017 |
| Publication date | Aug 4, 2020 |
| Grant date | Aug 4, 2020 |
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The present disclosure relates to an ion implantation amount adjustment device that includes: an adjuster configured to turn on or off an ion outlet of the ion implantation apparatus; and an actuator configured to control movement of the adjuster to adjust an opening degree of the ion outlet.
Opening claim text (preview).
What is claimed is: 1. An ion implantation amount adjustment device applied to an ion implantation apparatus, comprising: an adjuster configured to turn on or off an ion outlet of the ion implantation apparatus; and an actuator configured to control movement of the adjuster to adjust an opening degree of the ion outlet; wherein the adjuster includes an adjustment plate disposed at the ion outlet and the adjustment plate is a plate structure; wherein the actuator includes an electric motor and a driving rod; wherein one end of the driving rod is connected with and driven by the electric motor; and another end of the driving rod is connected with the adjustment plate in a transmission way; wherein the adjuster includes two adjustment plates; the another end of the driving rod is connected with an end of each adjustment plate through a rotation shaft to simultaneously control movement of the two adjustment plates; and another end of each adjustment plate is a free end; wherein the another end of the driving rod is connected with an end of the rotation shaft and the end of one of the two adjustment plates; and another end of the rotation shaft is connected with the end of the other adjustment plate. 2. The ion implantation amount adjustment device of claim 1 , wherein the two adjustment plates are symmetrically disposed at the ion outlet. 3. An ion implantation apparatus comprising: an ion outlet; the ion implantation amount adjustment device of claim 1 ; wherein the adjuster of the ion implantation amount adjustment device is configured to turn on or off the ion outlet. 4. An ion implantation amount adjustment method implemented with the ion implantation amount adjustment device of claim 1 , comprising: controlling, by the actuator, movement of the adjuster; and detecting ion implantation amount and adjusting movement amount of the adjuster according to a detection result. 5. An ion beam uniformity determination method implemented with the ion implantation amount adjustment device of claim 1 , comprising: controlling, by the actuator, movement of the adjuster, thereby enabling an opening degree of the ion outlet to be a first opening degree; detecting ion implantation amount, thereby obtaining a first detection result; controlling, by the actuator, movement of the adjuster, thereby enabling the opening degree of the ion outlet to be a second opening degree; detecting ion implantation amount, thereby obtaining a second detection result; and determining ion beam uniformity according to whether the first detection result and the second detection result satisfy a preset requirement. 6. The ion beam uniformity determination method of claim 5 , wherein the preset requirement includes an amount of ion implantation increases linearly as the opening degree of the ion outlet increases. 7. The ion implantation amount adjustment device of claim 1 , wherein the rotation shaft is a worm gear or a helical gear.
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