Broadband back mirror for a III-V chip in silicon photonics

Patent metadata

Field	Value
Publication number	US-10732349-B2
Application number	US-201715426375-A
Country	US
Kind code	B2
Filing date	Feb 7, 2017
Priority date	Feb 8, 2016
Publication date	Aug 4, 2020
Grant date	Aug 4, 2020

Abstract

A semiconductor laser has a mirror formed in a gain chip. The mirror can be placed in the gain chip to provide a broadband reflector to support multiple lasers using the gain chip. The mirror can also be placed in the gain chip to have the semiconductor laser be more efficient or more powerful by changing an optical path length of the gain of the semiconductor laser.

First claim

What is claimed is:

1. A semiconductor laser comprising:
a platform, wherein:
the platform is made of a first semiconductor material; and
the platform comprises a waveguide;

a gain medium, wherein:
the gain medium is made of a second semiconductor material;
the second semiconductor material has a direct bandgap;
the gain medium comprises a first edge;
the gain medium comprises a second edge; and
the first edge is opposite the second edge;

a first wall and a second wall forming a trench in the gain medium, wherein the first wall and the second wall are between the first edge and the second edge;
a coating disposed on the first wall, wherein:
the coating comprises a dielectric layer and a metal;
the dielectric layer is between the first wall and the metal; and
the coating forms a mirror in the gain medium; and

a ridge formed in the gain medium, wherein:
the ridge is configured to guide light in the gain medium;
the ridge comprises a first end and a second end;
the first end is opposite the second end;
the first end terminates at the mirror; and
the second end is optically coupled with the waveguide.

2. The semiconductor laser as recited in claim 1 , wherein:
the first semiconductor material is silicon; and
the second semiconductor material comprises a III-V material.

3. The semiconductor laser as recited in claim 1 , further comprising a reflector in the platform, wherein the mirror and the reflector form a resonator cavity.

4. The semiconductor laser as recited in claim 3 , wherein the reflector in the platform is configured to be an output coupler for the semiconductor laser.

5. The semiconductor laser as recited in claim 4 , wherein the dielectric layer is transparent to light corresponding to an energy of a bandgap of the second semiconductor material.

6. The semiconductor laser as recited in claim 4 , wherein the dielectric layer has a thickness between 25 nm and 100 nm.

7. The semiconductor laser as recited in claim 1 , wherein:
a metal coating is disposed on the second wall; and
the metal coating disposed on the second wall forms a mirror on the second wall.

8. The semiconductor laser as recited in claim 7 , wherein:
the semiconductor laser is a first laser; and
the mirror on the second wall is configured to reflect light from a second laser.

9. The semiconductor laser as recited in claim 1 , wherein the first edge and the second edge of the gain medium are formed by cleaving a semiconductor wafer.

10. The semiconductor laser as recited in claim 1 , wherein the first wall is skew in relation to the first edge.

11. The semiconductor laser as recited in claim 1 , wherein the gain medium is the gain for two or more lasers.

12. The semiconductor laser as recited in claim 11 , wherein the gain medium is the gain for six or more lasers.

13. A method for fabricating a semiconductor laser with a mirror in a gain medium, the method comprising:
bonding a chip to a platform, wherein:
the chip comprises a first semiconductor material;
the chip has a first edge;
the chip has a second edge; and
the platform comprises a second semiconductor material;

defining a ridge on the chip, wherein:
the ridge is configured to guide light in the chip;
the ridge comprises a first end and a second end;
the first end is opposite the second end;
the platform comprises a waveguide; and
the second end is optically coupled with the waveguide;

etching the chip to form a first wall and a second wall in the chip, wherein:
the etching the chip forms the first wall and the second wall in the chip between the first edge of the chip and the second edge of the chip; and
the etching the chip to form the first wall defines the second end of the ridge; and

applying a coating to the first wall to form the mirror, wherein:
the coating comprises a metal;
the coating comprises a dielectric layer; and
the dielectric layer is between the first wall and the metal.

14. The method of claim 13 , wherein etching the chip to form the first wall and the second wall occurs after bonding the chip to the platform.

15. The method of claim 13 , further comprising applying the coating to the second wall concurrently with applying the coating to the first wall.

16. The method of claim 15 , wherein applying the coating comprises applying the metal to the dielectric layer after applying the dielectric layer to the first wall and the second wall.

17. The method of claim 16 , wherein:
the first wall and the second wall define a recessed region in the chip; and
applying the coating to the first wall also applies the coating to the second wall, such that the mirror comprises two reflective surfaces.

18. A semiconductor laser comprising:
a chip, wherein:
the chip is made of a semiconductor material;
the semiconductor material has a direct bandgap;
the chip comprises a first edge;
the chip comprises a second edge; and
the first edge is opposite the second edge;

a first wall and a second wall in the chip, wherein:
the first wall and the second wall are between the first edge and the second edge;
the first wall is opposite the second wall; and
the first wall and the second wall define a recessed portion in the chip; and

a coating disposed on the first wall and on the second wall, wherein:
the coating comprises a metal;
the coating comprises a dielectric layer between the metal and the first wall; and
the coating forms a mirror in the chip.

19. The semiconductor laser as recited in claim 18 , comprising:
a platform, wherein:
the platform is made of a first semiconductor material;
the platform comprises a waveguide; and
the chip is bonded to the platform; and

a ridge formed in the chip, wherein:
the ridge is configured to guide light in the chip;
the ridge comprises a first end and a second end;
the first end is opposite the second end;
the first end terminates at the mirror; and
the second end is optically coupled with the waveguide.

20. The semiconductor laser as recited in claim 18 , comprising:
three or more ridges formed in the chip, wherein each ridge of the three or more ridges terminates at the mirror; and
three or more waveguides, wherein the three or more waveguides are each optically coupled with one ridge of the three or more ridges.

Assignees

• Skorpios Tech Inc

Inventors

• Lambert Damien

Classifications

• H04J14/02

  Wavelength-division multiplex systems · CPC title

• H01S5/02326

  Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses · CPC title

• H01S5/141 Primary

  using a wavelength selective device, e.g. a grating or etalon (H01S5/146 takes precedence) · CPC title

• H01S5/028

  Coatings {; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers} · CPC title

• G02B6/12002 Primary

  Three-dimensional structures · CPC title