Cost-efficient high power PECVD deposition for solar cells

Patent metadata

Field	Value
Publication number	US-10727367-B2
Application number	US-201916502919-A
Country	US
Kind code	B2
Filing date	Jul 3, 2019
Priority date	May 10, 2012
Publication date	Jul 28, 2020
Grant date	Jul 28, 2020

Abstract

A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

First claim

What is claimed is:

1. A plasma enhanced chemical vapor deposition (PECVD) system, comprising:
a vacuum chamber having a platform configured to receive a substrate; and
a common electrode disposed in the vacuum chamber and positioned over the platform, the common electrode having a first end connected to a first power generator configured to perform a high power PECVD flash deposition for depositing a first portion of a layer on the substrate, and a second end connected to a second power generator configured to perform a low power PECVD deposition for depositing a second portion of the layer on the substrate, the first power generator and the second power generator sharing usage of the common electrode in the vacuum chamber, and being controllable to form a p-type layer using high power PECVD and using low power PECVD for other layers within the vacuum chamber.

2. The system as recited in claim 1 , wherein the buffer layer is a single material layer of silicon germanium that is in direct contact with both the transparent electrode and the p-type layer of the photovoltaic stack.

3. The system as recited in claim 1 , wherein the high power PECVD flash deposition forms a first portion of the germanium containing material layers having an increasing crystallinity with increasing depth; and the low power PECVD deposition forms a second portion of the germanium containing material layers that is amorphous to provide the single material layer for the buffer layer having a varying crystal structure having said first portion with said increasing crystallinity with said increasing depth and said second portion being said amorphous.

4. The system as recited in claim 3 , wherein the increasing crystallinity is in a direction towards the p-type layer of hydrogenated silicon carbide to provide for alignment of a conduction band of the buffer layer and the p-type layer of hydrogenated silicon carbide to reduce a Schottky barrier between the buffer layer and the p-type layer of hydrogenated silicon carbide.

5. The system as recited in claim 1 , wherein the high power PECVD flash deposition forms a thickness of less than about 5 nm in less than about 5 seconds.

6. The system as recited in claim 1 , wherein the first power generator provides a plasma at a power of between about 100 mW/cm 2 and about 100 W/cm 2 .

7. The system as recited in claim 1 , wherein first power generator is configured to pulse to provide a plurality of the high power PECVD flash deposition cycles to form multiple layers of high power flash deposited material.

8. The system as recited in claim 7 , wherein the high power PECVD flash deposition cycles include different pulse durations.

9. The system as recited in claim 1 , wherein the vacuum chamber includes a support structure for holding or conveying the substrate.

Assignees

• IBM

Inventors

• Chen Tze-Chiang
• Hong Augustin J
• Kim Jeehwan
• Sadana Devendra K

Classifications

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10F77/1692

  the films including only Group IV materials · CPC title

• H10F77/1662

  including only Group IV materials · CPC title

• H10F77/1648

  including microcrystalline Group IV-IV materials, e.g. microcrystalline SiGe · CPC title