Semiconductor device

Patent metadata

Field	Value
Publication number	US-10720518-B2
Application number	US-201916351755-A
Country	US
Kind code	B2
Filing date	Mar 13, 2019
Priority date	Nov 15, 2016
Publication date	Jul 21, 2020
Grant date	Jul 21, 2020

Abstract

A semiconductor device includes a drift layer, a base layer, a collector layer, gate insulating films, gate electrodes, an emitter region, a first electrode and a second electrode. The base layer is provided on the drift layer. The drift layer is provided between the base layer and the collector layer. The gate insulating films are respectively provided on wall surfaces of trenches penetrating the base layer to reach the drift layer. The gate electrodes are respectively provided on the gate insulating films. The emitter region is provided in a surface layer portion of the base layer, and is in contact with the trenches. The first electrode is electrically coupled with the base layer and the emitter region. The second electrode is electrically coupled with the collector layer. Some gate electrodes are applied with a gate voltage. Other gate electrodes are electrically coupled to the first electrode.

First claim

What is claimed is:

1. A semiconductor device in which gate electrodes are provided respectively on gate insulating films, the semiconductor device comprising:
a drift layer having a first conductivity type;
a base layer having a second conductivity type and provided on the drift layer;
a collector layer having the second conductivity type, the drift layer being provided between the base layer and the collector layer;
the gate insulating films respectively provided on wall surfaces of trenches penetrating the base layer to reach the drift layer;
the gate electrodes respectively provided on the gate insulating films;
an emitter region having the first conductivity type, provided in a surface layer portion of the base layer, and being in contact with the trenches;
a first electrode electrically coupled with the base layer and the emitter region; and
a second electrode electrically coupled with the collector layer, wherein
some gate electrodes of the gate electrodes are applied with a gate voltage, and other gate electrodes are electrically coupled to the first electrode to have a potential equivalent to the first electrode,
the trenches in which the some gate electrodes are respectively provided are referred to as first trenches,
the trenches in which the other gate electrodes are respectively provided are referred to as second trenches,
the gate insulating films respectively provided on wall surfaces of he first trenches are referred to as first gate insulating films,
the gate insulating films respectively provided on wall surfaces of the second trenches are referred to as second gate insulating films,
a capacitance per unit area of each of portions of the second gate insulating films is referred to as a second capacitance, the portions being respectively provided on regions in contact with the drift layer on side surfaces of the second trenches,
a capacitance per unit area of each of portions of the first gate insulating films is referred to as a first capacitance, the portions being respectively provided on regions in contact with the base layer on side surfaces of the first trenches,
all of the second capacitances are each equal to or less than the first capacitances, and at least some of the second capacitances are each less than the first capacitances,
all the portions of the second gate insulating films are each equal to or greater in thickness than the portions of the first gate insulating films, and
the second gate insulating films are each equal in configuration to the first gate insulating films.

2. The semiconductor device according to claim 1 , wherein
all the portions of the second gate insulating films are each equal to or less in dielectric constant than the portions of the first gate insulating films.

3. A semiconductor device comprising:
a drift layer having a first conductivity type;
a base layer having a second conductivity type and provided on the drift layer;
a collector layer having the second conductivity type, the drift layer being provided between the base layer and the collector layer;
a plurality of gate insulating films respectively provided on wall surfaces of trenches penetrating the base layer to reach the drift layer;
a plurality of gate electrodes respectively provided on the plurality of gate insulating films;
an emitter region having the first conductivity type, provided in a surface layer portion of the base layer, and being in contact with the trenches;
an emitter electrode electrically coupled with the base layer and the emitter region; and
a collector electrode electrically coupled with the collector layer, wherein
the plurality of gate electrodes include a first gate electrode applied with a gate voltage,
the first gate electrode is provided in a first trench included in the trenches,
the plurality of gate electrodes further include a second gate electrode electrically coupled to the emitter electrode to have a potential equivalent to the emitter electrode,
the second gate electrode is provided in a second trench included in the trenches,
the plurality of gate insulating films include a first gate insulating film provided on a wall surface of the first trench,
the plurality of gate insulating films further include a second gate insulating film provided on a wall surface of the second trench,
a capacitance per unit area of each of portions of the second gate insulating film is referred to as a second capacitance, the portions being respectively provided on regions in contact with the drift layer on a side surface of the second trench,
a capacitance per unit area of each of portions of the first gate insulating films is referred to as a first capacitance, the portions being respectively provided on regions in contact with the base layer on a side surface of the first trench,
all of the second capacitances are each equal to or less than the first capacitances, and at least some of the second capacitances are each less than the first capacitances,
all the portions of the second gate insulating film are each equal to or greater in thickness than the portions of the first gate insulating film, and
the second gate insulating film is equal in configuration to the first gate insulating film.

Assignees

• Denso Corp

Inventors

• Sumitomo Masakiyo

Classifications

• H10D64/518

  characterised by their lengths or sectional shapes · CPC title

• H10D64/513

  within recesses in the substrate, e.g. trench gates, groove gates or buried gates · CPC title

• H10D64/231

  Emitter or collector electrodes for bipolar transistors · CPC title

• H10D64/117

  Recessed field plates, e.g. trench field plates or buried field plates · CPC title

• H10D62/393

  Body regions of DMOS transistors or IGBTs  (cell layout of DMOS H10D62/127) · CPC title