Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures

Patent metadata

Field	Value
Publication number	US-10720331-B2
Application number	US-201916245006-A
Country	US
Kind code	B2
Filing date	Jan 10, 2019
Priority date	Nov 1, 2016
Publication date	Jul 21, 2020
Grant date	Jul 21, 2020

Abstract

Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments, methods may include contacting a substrate with a first vapor phase reactant comprising a transition metal precursor and contacting the substrate with a second vapor phase reactant comprising an alkyl-hydrazine precursor. In some embodiments, related semiconductor device structures may include a PMOS transistor gate structure, the PMOS transistor gate structure including a transition metal nitride film and a gate dielectric between the transition nitride film and a semiconductor body. The transition metal nitride film includes a predominant (200) crystallographic orientation.

First claim

What is claimed is:

1. A semiconductor device structure comprising:
a PMOS transistor gate structure, the PMOS gate structure comprising:
a transition metal nitride film;
a semiconductor body; and
a gate dielectric disposed between the transition metal nitride film and the semiconductor body;

wherein the transition metal nitride film comprises a predominant (200) crystallographic orientation, and
wherein the transition metal nitride film has atomic concentration of carbon greater than 10%.

2. The semiconductor device structure of claim 1 , wherein the transition metal nitride film comprises titanium nitride.

3. The semiconductor device structure of claim 1 , wherein the transition metal nitride film has a thickness of less than 20 Angstroms.

4. The semiconductor device structure of claim 1 , wherein the PMOS gate structure has an effective work function greater than 4.6 eV.

5. A semiconductor device structure comprising:
a NMOS transistor gate structure, the NMOS gate structure comprising:
a transition metal nitride film;
a semiconductor body; and
a gate dielectric disposed between the transition metal nitride film and the semiconductor body;

wherein the transition metal nitride film comprises a predominant (200) crystallographic orientation, and
wherein the NMOS gate structure has an effective work function greater than 4.7 eV.

6. The semiconductor device structure of claim 5 , wherein the transition metal nitride film comprises titanium nitride.

7. The semiconductor device structure of claim 3 , wherein the thickness of the transition metal nitride film is less than approximately 10 Angstroms.

8. The semiconductor device structure of claim 4 , wherein the effective work function of the PMOS gate structure is greater than approximately 4.8 eV.

9. The semiconductor device structure of claim 1 , wherein the transition metal nitride film has atomic concentration of hydrogen greater than 0.1%.

10. The semiconductor device structure of claim 9 , wherein the transition metal nitride film has atomic concentration of hydrogen greater than 1%.

11. The semiconductor device structure of claim 10 , wherein the transition metal nitride film has atomic concentration of hydrogen greater than 2%.

12. The semiconductor device structure of claim 11 , wherein the transition metal nitride film has atomic concentration of hydrogen greater than 10%.

13. The semiconductor device structure of claim 5 , wherein the transition metal nitride film has a thickness less than 50 Angstroms and wherein the NMOS gate structure has an effective work function greater that 4.8 eV.

14. The semiconductor device structure of claim 5 , wherein the transition metal nitride film has a thickness less than 30 Angstroms.

15. The semiconductor device structure of claim 5 , wherein the transition metal nitride film has atomic concentration of carbon greater than 10%.

16. The semiconductor device structure of claim 5 , wherein the transition metal nitride film has atomic concentration of hydrogen greater than 0.1%.

17. A semiconductor device structure comprising:
a transistor gate structure, comprising:
a titanium nitride film;
a semiconductor body; and
a gate dielectric disposed between the titanium nitride film and the semiconductor body;

wherein the titanium nitride film comprises a predominant (200) crystallographic orientation,
wherein the titanium nitride film has a thickness of less than 20 Angstroms, and
wherein the transistor gate structure has an effective work function greater than 4.6 eV.

18. The semiconductor device structure of claim 17 , wherein the titanium nitride film has atomic concentration of carbon greater than 10%.

19. The semiconductor device structure of claim 17 , wherein the titanium nitride film has atomic concentration of hydrogen greater than 0.1%.

20. The semiconductor device structure of claim 19 , wherein the titanium nitride film has atomic concentration of hydrogen greater than 2% and wherein the transistor gate structure has an effective work function greater than 4.7 eV.

Assignees

• Asm Ip Holding Bv
• Asm Ip Holdings B V

Inventors

• Raisanen Petri
• Givens Michael Eugene

Classifications

• H10D64/01318 Primary

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• H10D84/0172

  Manufacturing their gate conductors · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title

• H10D64/667

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers (having lateral variation H10D64/671) · CPC title

• H10D30/60

  Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence) · CPC title