Method of producing low alpha-ray emitting bismuth, and low alpha-ray emitting bismuth

Patent metadata

Field	Value
Publication number	US-10711358-B2
Application number	US-201414906697-A
Country	US
Kind code	B2
Filing date	Sep 22, 2014
Priority date	Feb 20, 2014
Publication date	Jul 14, 2020
Grant date	Jul 14, 2020

Abstract

Provided is low alpha-ray emitting bismuth having an alpha dose of 0.003 cph/cm 2 or less. Additionally provided is a method of producing low alpha-ray emitting bismuth, wherein bismuth having an alpha dose of 0.5 cph/cm 2 or less is used as a raw material, the raw material bismuth is melted in a nitric acid solution via electrolysis to prepare a bismuth nitrate solution having a bismuth concentration of 5 to 50 g/L and a pH of 0.0 to 0.4, the bismuth nitrate solution is passed through a column filled with ion-exchange resin to eliminate polonium contained in the solution by an ion-exchange resin, and bismuth is recovered by means of electrowinning from the solution that was passed through the ion-exchange resin. Recent semiconductor devices are of high density and high capacity, and therefore are subject to increased risk of soft errors caused by the effects of alpha rays emitted from materials in the vicinity of semiconductor chips. In particular, there is a strong demand for higher purification of solder materials used near semiconductor devices, and there is a demand for low alpha-ray emitting materials. Therefore, the present invention aims to elucidate the phenomenon of alpha ray generation from bismuth, and to provide a low alpha-ray emitting, high-purity bismuth that can be applied to the required materials and a production method thereof, as well as to provide an alloy of low alpha-ray emitting bismuth and tin and a production method thereof.

First claim

The invention claimed is:

1. A low alpha-ray dose bismuth, wherein the bismuth has an alpha-ray dose of 0.003 cph/cm 2 or less.

2. The low alpha-ray dose bismuth according to claim 1 , wherein the bismuth has a content of Pb of 0.1 ppm or less.

3. The low alpha-ray dose bismuth according to claim 2 , wherein the bismuth has a content of each of U and Th of 5 ppb or less.

4. A low alpha-ray dose bismuth-tin alloy, wherein the alloy comprises bismuth according to claim 3 and tin having an alpha-ray dose of less than 0.001 cph/cm 2 .

5. A low alpha-ray dose bismuth-tin alloy according to claim 4 , wherein the alloy has an alpha-ray dose of 0.0020 cph/cm 2 or less.

6. The low alpha-ray dose bismuth-tin alloy according to claim 5 , wherein the alloy has a content of tin of 40 mass % or more and 55 mass % or less.

7. The low alpha-ray dose bismuth according to claim 3 , wherein the bismuth has an alpha-ray dose of 0.003 cph/cm 2 .

8. A low alpha-ray dose bismuth-tin alloy, wherein the alloy comprises bismuth according to claim 2 and tin having an alpha-ray dose of less than 0.001 cph/cm 2 .

9. A low alpha-ray dose bismuth-tin alloy according to claim 8 , wherein the alloy has an alpha-ray dose of 0.0020 cph/cm 2 or less.

10. The low alpha-ray dose bismuth-tin alloy according to claim 8 , wherein the alloy has a content of tin of 40 mass % or more and 55 mass % or less.

11. The low alpha-ray dose bismuth according to claim 1 , wherein the bismuth has a content of each of U and Th of 5 ppb or less.

12. A low alpha-ray dose bismuth-tin alloy, comprising bismuth according to claim 1 and tin having an alpha-ray dose of less than 0.001 cph/cm 2 such that the alloy has an alpha-ray dose of 0.0020 cph/cm 2 or less.

13. The low alpha-ray dose bismuth-tin alloy according to claim 12 , wherein the alloy has a content of tin of 40 mass % or more and 55 mass % or less.

14. The low alpha-ray dose bismuth-tin alloy according to claim 13 , wherein the alloy has an alpha-ray dose of 0.0018 cph/cm 2 .

15. A method of producing low alpha-ray dose bismuth having an alpha-ray dose of 0.003 cph/cm 2 or less, wherein bismuth having an alpha-ray dose of 0.5 cph/cm 2 or less is used as a raw material, the raw material bismuth is melted in a nitric acid solution via electrolysis to prepare a bismuth nitrate solution having a bismuth concentration of 5 to 50 g/L and a pH of 0.0 to 0.4, the bismuth nitrate solution is passed through a column filled with ion-exchange resin to eliminate polonium contained in the solution by an ion-exchange resin, and bismuth is recovered by means of electrowinning from the solution that was passed through the ion-exchange resin.

16. The method of producing low alpha-ray dose bismuth according to claim 15 , wherein volume of the ion-exchange resin is set to be 500 ml or more and 2 L or less when eliminating the polonium contained in the bismuth nitrate solution by the ion-exchange resin.

17. The method of producing low alpha-ray dose bismuth according to claim 16 , wherein the rate of passing the bismuth nitrate solution through the column filled with the ion-exchange resin is 5 L/h or more and 8 L/h or less when eliminating the polonium contained in the bismuth nitrate solution by the ion-exchange resin.

18. The method of producing low alpha-ray dose bismuth according to claim 17 , wherein the raw material bismuth is melted in the nitric acid solution via electrolysis to eliminate elements having an electric potential nobler than bismuth.

19. The method of producing low alpha-ray dose bismuth according to claim 18 , wherein elements having an electric potential baser than bismuth are eliminated via electrowinning.

20. The method of producing low alpha-ray dose bismuth according to claim 15 , wherein the rate of passing the bismuth nitrate solution through the column filled with the ion-exchange resin is 5 L/h or more and 8 L/h or less when eliminating the polonium contained in the bismuth nitrate solution by the ion-exchange resin.

21. The method of producing low alpha-ray dose bismuth according to claim 15 , wherein the raw material bismuth is melted in the nitric acid solution via electrolysis to eliminate elements having an electric potential nobler than bismuth.

22. The method of producing low alpha-ray dose bismuth according to claim 15 , wherein elements having an electric potential baser than bismuth are eliminated via electrowinning.

Assignees

• Jx Nippon Mining & Metals Corp

Inventors

• HOSOKAWA Yu

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/726

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/252

  comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W42/25

  against alpha rays, e.g. for outer space applications · CPC title

• H05K3/346

  Solder materials or compositions specially adapted therefor · CPC title