Highly luminescent nanostructures and methods of producing same

Patent metadata

Field	Value
Publication number	US-10707371-B2
Application number	US-201715852249-A
Country	US
Kind code	B2
Filing date	Dec 22, 2017
Priority date	Jul 2, 2012
Publication date	Jul 7, 2020
Grant date	Jul 7, 2020

Abstract

Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.

First claim

What is claimed is:

1. A composition comprising a population of nanostructures, which population displays a photoluminescence quantum yield of 70% or greater, wherein a photoluminescence spectrum of the population has a full width at half maximum of 35 nm or less, wherein a photoluminescence spectrum of the population has an emission maximum between 450 nm and 750 nm, and wherein the nanostructures comprise InP.

2. The composition of claim 1 , wherein the population displays a photoluminescence quantum yield of 75% or greater.

3. The composition of claim 1 , wherein the population displays a photoluminescence quantum yield of 80% or greater.

4. The composition of claim 1 , wherein the population displays a photoluminescence quantum yield of 85% or greater.

5. The composition of claim 1 , wherein a photoluminescence spectrum of the population has an emission maximum between 500 nm and 650 nm.

6. The composition of claim 1 , wherein a photoluminescence spectrum of the population has an emission maximum between 500 nm and 560 nm.

7. The composition of claim 1 , wherein a photoluminescence spectrum of the population has an emission maximum between 500 nm and 540 nm.

8. The composition of claim 1 , wherein a photoluminescence spectrum of the population has an emission maximum between 600 nm and 650 nm.

9. The composition of claim 1 , wherein the nanostructures are InP/ZnS x Se 1-x /ZnS core/shell quantum dots, where 0≤x≤1.

10. The composition of claim 9 , wherein 0.25≤x≤0.75.

11. The composition of claim 10 , wherein x is about 0.5.

12. The composition of claim 9 , wherein the InP cores have an average diameter between about 15 Å and about 20 Å.

13. The composition of claim 12 , wherein the ZnS x Se 1-x shell is about 0.5 monolayer thick and the ZnS shell is about 2.0 monolayers thick.

14. The composition of claim 9 , comprising a C5-C8 carboxylic acid ligand bound to the nanostructures, which ligand is an unbranched alkyl carboxylic acid.

15. The composition of claim 14 , wherein the ligand is hexanoic acid.

16. The composition of claim 14 , comprising a dicarboxylic or polycarboxylic acid ligand bound to the nanostructures.

17. The composition of claim 16 , wherein the dicarboxylic or polycarboxylic acid ligand is dodecenyl succinic acid.

18. The composition of claim 1 , wherein the nanostructures are quantum dots having an average diameter between about 30 Å and about 36 Å.

19. The composition of claim 18 , wherein the nanostructures comprise InP cores having an average diameter between about 15 Å and about 20 Å.

20. The composition of claim 1 , comprising a C5-C8 carboxylic acid ligand bound to the nanostructures.

21. The composition of claim 20 , wherein the C5-C8 carboxylic acid ligand is an unbranched alkyl carboxylic acid.

22. The composition of claim 20 , wherein the C5-C8 carboxylic acid ligand is hexanoic acid.

23. The composition of claim 20 , comprising a dicarboxylic or polycarboxylic acid ligand bound to the surface of the nanostructures.

24. The composition of claim 23 , wherein the dicarboxylic or polycarboxylic acid ligand is dodecenyl succinic acid.

25. The composition of claim 1 , wherein the nanostructures are embedded in a matrix.

26. A device comprising the composition of claim 1 .

27. A composition comprising a population of nanostructures, which population displays a photoluminescence quantum yield of 70% or greater, wherein a photoluminescence spectrum of the population has a full width at half maximum of 35 nm or less, comprising a C5-C8 carboxylic acid bound to the nanostructures, and wherein the nanostructures comprise InP.

28. A composition comprising a population of nanostructures, which population displays a photoluminescence quantum yield of 70% or greater, wherein a photoluminescence spectrum of the population has a full width at half maximum of 35 nm or less, wherein the nanostructures are embedded in a matrix, and wherein the nanostructures comprise InP.

Assignees

• Nanosys Inc

Inventors

• Guo Wenzhuo
• Chen Jian
• Dubrow Robert
• Freeman William P

Classifications

• H10H20/8512

  Wavelength conversion materials · CPC title

• H10H20/0361

  of wavelength conversion means · CPC title

• H10H20/034

  of coatings · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H10H20/01

  Manufacture or treatment · CPC title