Block copolymer

Patent metadata

Field	Value
Publication number	US-10703897-B2
Application number	US-201515515821-A
Country	US
Kind code	B2
Filing date	Sep 30, 2015
Priority date	Sep 30, 2014
Publication date	Jul 7, 2020
Grant date	Jul 7, 2020

Abstract

The present application relates to a block copolymer and its use. The present application can provides a block copolymer that has an excellent self assembling property or phase separation property and therefore can be used in various applications and its use.

First claim

What is claimed is:

1. A block copolymer comprising a first block and a second block having a different chemical structure from the first block, wherein the first block exhibits a melting transition peak or an isotropic transition peak in a range from −80° C. to 200° C. in differential scanning calorimetry (DSC) analysis, and wherein the first block comprises a side chain of which the number of chain-forming atoms is 8 or more and the second block comprises halogen atom.

2. The block copolymer of claim 1 , wherein the block copolymer exhibits both of a melting transition peak and an isotropic transition peak and wherein a difference (Ti−Tm) between a temperature (Ti) at which the isotropic transition peak is shown and a temperature (Tm) at which the melting transition peak is shown is from 5° C. to 70° C.

3. The block copolymer of claim 1 , wherein the block copolymer exhibits both of a melting transition peak and an isotropic transition peak and wherein a ratio (M/I) of an area (M) of the melting transition peak relative to an area (I) of the isotropic transition peak is from 0.1 to 500.

4. The block copolymer of claim 1 , wherein the first block comprises a side chain satisfying the Equation 1:
−10° C.≤ Tm− 12.25° C.× n+ 149.5° C.≤10° C.  [Equation 1]

wherein, Tm is the temperature at which the melting transition peak and n is the number of chain-forming atoms of the side chain.

5. The block copolymer of claim 1 , wherein the first or second block comprises an aromatic structure.

6. The block copolymer of claim 1 , wherein the first block and the second block comprise an aromatic structure.

7. The block copolymer of claim 1 , wherein the first block comprises an aromatic structure to which the side chain of which the number of chain-forming atoms is 8 or more is linked.

8. The block copolymer of claim 7 , wherein the side chain is linked to the aromatic structure via oxygen atom or nitrogen atom.

9. The block copolymer of claim 1 , wherein the second block comprises an aromatic structure with which the halogen atom is substituted.

10. The block copolymer of claim 1 , wherein the first block comprises an aromatic structure to which the side chain of which the number of chain-forming atoms is 8 or more is linked and the second block comprises an aromatic structure with which the halogen atom is substituted.

11. The block copolymer of claim 1 , wherein the first block comprises a cyclic structure and the side chain is linked to the cyclic structure.

12. The block copolymer of claim 11 , wherein the cyclic structure does not comprise halogen atom.

13. The block copolymer of claim 1 , wherein the second block comprises at least 3 halogen atoms.

14. The block copolymer of claim 13 , wherein the second block comprises a cyclic structure and the halogen atoms are substituted with the cyclic structure.

15. The block copolymer of claim 1 , wherein the second block comprises a unit represented by Formula 3 below:

wherein, the X 2 is a single bond, an oxygen atom, a sulfur atom, —S(═O) 2 —, an alkylene group, an alkenylene group, an alkynylene group, —C(═O)—X 1 — or —X 1 —C(═O)—, where the X 1 is a single bond, an oxygen atom, a sulfur atom, —S(═O) 2 —, an alkylene group, an alkenylene group or an alkynylene group, and the W is an aryl group including at least one halogen atom.

16. A polymer layer including the block copolymer of claim 1 , wherein the block copolymer is self-assembled.

17. A pattern forming method including selectively eliminating the first or second block from a polymer layer including the block copolymer of claim 1 on a substrate, wherein the block copolymer is self-assembled.

18. A block copolymer comprising a first block and a second block having a different chemical structure from the first block, wherein the first block exhibits a melting transition peak or an isotropic transition peak in a range from −80° C. to 200° C. in differential scanning calorimetry (DSC) analysis and wherein the first block comprises an aromatic structure that does not have halogen atom and the second block comprises an aromatic structure having halogen atom.

19. The block copolymer of claim 18 , wherein the first block comprises a side chain of which the number of chain-forming atoms is 8 or more.

20. A block copolymer comprising a first block and a second block having a different chemical structure from the first block, wherein the first block exhibits a melting transition peak or an isotropic transition peak in a range from −80° C. to 200° C. in differential scanning calorimetry (DSC) analysis and wherein the first block comprises a unit represented by Formula 1 below:

wherein, R is a hydrogen or an alkyl group having 1 to 4 carbon atom(s), X is a single bond, an oxygen atom, a sulfur atom, —S(═O) 2 —, a carbonyl group, an alkylene group, an alkenylene group, an alkynylene group, —C(═O)—X 1 — or —X 1 —C(═O)—, where the X 1 is an oxygen atom, a sulfur atom, —S(═O) 2 —, an alkylene group, an alkenylene group or an alkynylene group, and Y is a monovalent substituent including a ring structure to which the side chain having 8 or more chain-forming atoms is linked.

Assignees

• Lg Chemical Ltd

Inventors

• Lee Jeong Kyu
• Oh Sung Joon
• Kang Yeon Joo
• Kim Jung Keun
• Song In Young
• Yoon Sung Soo

Classifications

• H10P95/066

  the removal being a selective chemical etching step, e.g. selective dry etching through a mask · CPC title

• H10P95/064

  the removal being chemical etching · CPC title

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P76/204

  of organic photoresist masks · CPC title

• H10P50/73

  using masks for insulating materials · CPC title