Glass substrate for chemical strengthening and method for chemically strengthening with controlled curvature
US-2018370852-A1 · Dec 27, 2018 · US
Ion implantation process and ion implanted glass substrates
US10703674B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10703674-B2 |
| Application number | US-201515520908-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 21, 2015 |
| Priority date | Oct 24, 2014 |
| Publication date | Jul 7, 2020 |
| Grant date | Jul 7, 2020 |
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- Title
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Abstract
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The invention concerns a process for increasing the scratch resistance of a glass substrate by implantation of simple charge and multicharge ions, comprising maintaining the temperature of the area of the glass substrate being treated at a temperature that is less than or equal to the glass transition temperature of the glass substrate, selecting the ions to be implanted among the ions of Ar, He, and N, setting the acceleration voltage for the extraction of the ions at a value comprised between 5 kV and 200 kV and setting the ion dosage at a value comprised between 10 14 ions/cm 2 and 2.5×10 17 ions/cm 2 .The invention further concerns glass substrates comprising an area treated by implantation of simple charge and multicharge ions according to this process and their use for reducing the probability of scratching on the glass substrate upon mechanical contact.
First claim
Opening claim text (preview).
The invention claimed is: 1. A process for increasing the scratch resistance of a glass substrate, the process comprising: maintaining the temperature of the area of the glass substrate being treated at a temperature that is less than or equal to the glass transition temperature of the glass substrate, setting the acceleration voltage for the extraction of nitrogen simple charge or multicharge ions at a value comprised between 25 kV and 60 kV, setting an ion dosage at a value comprised between 10 14 ions/cm 2 and 10 17 ions/cm 2 , and implanting, within the glass, the nitrogen simple charge and multicharge ions. 2. A process according to claim 1 , wherein the acceleration voltage is set at a value comprised between 25 kV and 35 kV. 3. A process according to claim 2 , wherein the ion dosage is set at a value comprised between 5.0×10 14 ions/cm 2 and 10 17 ions/cm 2 . 4. A process according to claim 1 , wherein the glass substrate is selected among soda-lime glass and aluminosilicate glass. 5. A process according to claim 2 , wherein the ion dosage is set at a value comprised between 2.5×10 14 ions/cm 2 and 10 17 ions/cm 2 . 6. A process according to claim 2 , wherein the ion dosage is set at a value comprised between 2.5×10 15 ions/cm 2 and 5×10 16 ions/cm 2 .
Assignees
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Classifications
Improving the yield, e-g- reduction of reject rates · CPC title
Ion implantation · CPC title
- C03C23/0055Primary
by ion implantation · CPC title
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- What does patent US10703674B2 cover?
- The invention concerns a process for increasing the scratch resistance of a glass substrate by implantation of simple charge and multicharge ions, comprising maintaining the temperature of the area of the glass substrate being treated at a temperature that is less than or equal to the glass transition temperature of the glass substrate, selecting the ions to be implanted among the ions of Ar, H…
- Who is the assignee on this patent?
- Agc Glass Europe, Agc Inc, Quertech Ingenierie
- What technology area does this patent fall under?
- Primary CPC classification C03C23/0055. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jul 07 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).