Substrate processing method

Patent metadata

Field	Value
Publication number	US-10702946-B2
Application number	US-201715841024-A
Country	US
Kind code	B2
Filing date	Dec 13, 2017
Priority date	Dec 14, 2016
Publication date	Jul 7, 2020
Grant date	Jul 7, 2020

Abstract

A substrate has a first surface with at least one division line formed thereon and a second surface opposite the first surface. The substrate is processed by applying a pulsed laser beam from the side of the first surface. The substrate is transparent to the pulsed laser beam. The pulsed laser beam is applied at least in a plurality of positions along the at least one division line, a focal point of the pulsed laser beam located at a distance from the first surface in the direction from the first surface towards the second surface, so as to form a plurality of modified regions inside the substrate. Each modified region is entirely within the bulk of the substrate, without any openings open to the first surface or the second surface. Substrate material is removed along the at least one division line where the modified regions are present.

First claim

The invention claimed is:

1. A method of processing a substrate, having a first surface with at least one division line formed thereon and a second surface opposite the first surface the method comprising:
applying a pulsed laser beam to the substrate from the side of the first surface, wherein the substrate is made of a material which is transparent to the pulsed laser beam and the pulsed laser beam is applied to the substrate at least in a plurality of positions along the at least one division line, in a condition where a focal point of the pulsed laser beam is located at a distance from the first surface in the direction from the first surface towards the second surface, so as to form a plurality of modified regions inside the substrate along the at least one division line, the plurality of modified regions being formed inside the substrate so that adjacent modified regions do not overlap each other in the extension direction of the at least one division line, each modified region being arranged entirely within the bulk of the substrate, without forming any openings open to the first surface or the second surface; and
removing substrate material along the at least one division line where the modified regions arranged entirely within the bulk of the substrate are present.

2. The method according to claim 1 , wherein the substrate is a single crystal substrate or a glass substrate or a compound substrate.

3. The method according to claim 1 , wherein the modified regions comprise amorphous regions or regions in which cracks are formed, or the modified regions are amorphous regions or regions in which cracks are formed.

4. The method according to claim 1 , wherein the substrate material is removed by cutting the substrate along the at least one division line where the modified regions arranged entirely within the bulk of the substrate are present.

5. The method according to claim 1 , wherein the substrate material is mechanically removed along the at least one division line where the modified regions arranged entirely within the bulk of the substrate are present, by mechanically cutting the substrate along the at least one division line where the modified regions arranged entirely within the bulk of the substrate are present.

6. The method according to claim 1 , further comprising grinding the second surface of the substrate to adjust the substrate thickness.

7. The method according to claim 6 , wherein grinding the second surface of the substrate is performed after removing the substrate material along the at least one division line where the modified regions arranged entirely within the bulk of the substrate are present.

8. The method according to claim 7 , wherein
the substrate material is removed along only a part of the thickness, in the direction from the first surface towards the second surface, of the substrate, and
grinding the second surface of the substrate is performed along a remaining part of the thickness of the substrate, in which no substrate material has been removed, so as to divide the substrate along the at least one division line.

9. The method according to claim 1 , wherein, in each of the plurality of positions along the at least one division line where the pulsed laser beam is applied, plural modified regions are formed, each modified region being arranged entirely within the bulk of the substrate, and the plural modified regions being arranged next to one another along the direction from the first surface towards the second surface.

10. The method according to claim 1 , wherein the substrate material is removed along the entire extension, in the direction from the first surface towards the second surface, of the modified regions.

11. The method according to claim 1 , wherein
the at least one division line has a width in a direction perpendicular to the extension direction of the at least one division line, and
the method further comprises applying the pulsed laser beam also in a plurality of positions along the width direction of the at least one division line, so as to form within the width of the division line a plurality of rows of modified regions, each row extending along the extension direction of the at least one division line, wherein the rows are arranged adjacent to each other in the width direction of the at least one division line.

12. The method according to claim 11 , wherein
the substrate material is removed along the at least one division line where the modified regions arranged entirely within the bulk of the substrate are present by mechanically cutting the substrate, using a cutting means, and
a width, in the direction perpendicular to the extension direction of the at least one division line, of an area of the substrate, in which the rows of modified regions have been formed, is in a range of 90% to 110% of a width, in the direction perpendicular to the extension direction of the at least one division line, of the cutting means.

13. The method according to claim 12 , wherein a row or rows of modified regions arranged closer to the center of the at least one division line, in the width direction of the at least one division line, is or are formed with a pulsed laser beam having a higher power than a pulsed laser beam used for forming a row or rows of modified regions arranged further away from the center of the at least one division line, in the width direction of the at least one division line.

14. The method according to claim 1 , wherein the substrate material is mechanically removed along the at least one division line where the modified regions arranged entirely within the bulk of the substrate are present , only by mechanically cutting the substrate along the at least one division line where the modified regions arranged entirely within the bulk of the substrate are present.

Assignees

• Disco Corp

Inventors

• Morikazu Hiroshi
• Priewasser Karl Heinz
• Hattori Nao

Classifications

• H10P54/00 Primary

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10W10/01

  Manufacture or treatment · CPC title

• H10W10/00 Primary

  Isolation regions in semiconductor bodies between components of integrated devices · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10H20/01

  Manufacture or treatment · CPC title