Metal-semiconductor-metal two-dimensional electron gas varactor and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-10700667-B2
Application number	US-201715827290-A
Country	US
Kind code	B2
Filing date	Nov 30, 2017
Priority date	Feb 20, 2017
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

Disclosed are a metal-semiconductor-metal two-dimensional electron gas varactor (MSM-2DEG) and a method of manufacturing the same. There is provided an MSM-2DEG varactor having an asymmetric structure, which includes a first gate formed on a semiconductor layer, and a second gate spaced apart at a predetermined distance from the first gate and formed on the semiconductor layer, wherein the first gate and the second gate are different in shape and gate length.

First claim

What is claimed is:

1. A metal-semiconductor-metal two-dimensional electron gas (MSM-2DEG) varactor comprising:
a first gate formed on a semiconductor layer;
a second gate formed on the semiconductor layer and spaced apart at a predetermined distance from the first gate, the first gate and the second gate being different in shape and gate length;
a third gate formed on the semiconductor layer and spaced apart at the predetermined distance from the second gate, wherein the first gate and the third gate are symmetrical to each other with respect to the second gate; and
a dielectric formed on the semiconductor layer and disposed between the second gate and the semiconductor layer at the lower left and lower right sides of the second gate;
wherein a first space having the predetermined distance between the first and second gate is free from the dielectric and a second space having the predetermined distance between the second gate and the third gate is free from the dielectric.

2. The MSM-2DEG varactor according to claim 1 , wherein
the first gate comprises a rectangular gate having a micron-scale gate length, and
the second gate comprises a T-shaped gate having a nano-scale gate length.

3. The MSM-2DEG varactor according to claim 2 , wherein the second gate comprises an upper end portion having a length which ranges from 300 nm to 1 μm.

4. The MSM-2DEG varactor according to claim 2 , wherein the second gate has a gate length which ranges from 50 nm to 500 nm.

5. The MSM-2DEG varactor according to claim 2 , wherein the first gate and the second gate have a micron-scale gate width.

6. The MSM-2DEG varactor according to claim 1 , wherein
the first gate is configured to form an anode, and
the second gate is configured to form a cathode.

7. The MSM-2DEG varactor according to claim 1 , wherein the third gate has the same shape and the same gate length as those of the first gate.

8. The MSM-2DEG varactor according to claim 1 , wherein the first gate and the third gate are configured to form anodes, and the second gate is configured to form a cathode.

Assignees

• Gwangju Inst Science & Tech

Inventors

• Jang Jae Hyung
• Hwang Ji Hyun

Classifications

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D1/045 Primary

  of capacitors having potential barriers, e.g. varactors · CPC title

• H10D64/27

  Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates · CPC title

• H10D1/64 Primary

  Variable-capacitance diodes, e.g. varactors · CPC title

• H10D62/824

  comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions · CPC title