MTJ structure having vertical magnetic anisotropy and magnetic element including the same

Patent metadata

Field	Value
Publication number	US-10700266-B2
Application number	US-201615544356-A
Country	US
Kind code	B2
Filing date	Jan 6, 2016
Priority date	Jan 19, 2015
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

An MTJ structure having vertical magnetic anisotropy is provided. The MTJ structure having vertical magnetic anisotropy can comprise: a substrate; an artificial antiferromagnetic layer located on the substrate; a buffer layer located on the artificial antiferromagnetic layer, and including W or an alloy containing W; a first ferromagnetic layer located on the buffer layer, and having vertical magnetic anisotropy; a tunneling barrier layer located on the first ferromagnetic layer; and a second ferromagnetic layer located on the tunneling barrier layer, and having vertical magnetic anisotropy. Accordingly, in the application of bonding the artificial antiferromagnetic layer with a CoFeB/MgO/CoFeB structure, the MTJ structure having improved thermal stability at high temperature can be provided by using the buffer layer therebetween.

First claim

The invention claimed is:

1. A magnetic tunnel junction (MTJ) structure having vertical magnetic anisotropy, the MTJ structure comprising:
a substrate;
an artificial antiferromagnetic layer located on the substrate;
a buffer layer located on the artificial antiferromagnetic layer and including W or an alloy containing W;
a first ferromagnetic layer located on the buffer layer, having CoFeB, and having vertical magnetic anisotropy;
a tunneling barrier layer located on the first ferromagnetic layer and having MgO; and
a second ferromagnetic layer located on the tunneling barrier layer, having CoFeB, and having vertical magnetic anisotropy,
wherein the artificial antiferromagnetic layer fixes a magnetic direction of the first ferromagnetic layer, and the buffer layer has a thickness of 2 nm-5 nm to prevent diffusion of material in the artificial antiferromagnetic layer into the first ferromagnetic layer, and
wherein the buffer layer induces continuity of the crystalline structure in the first ferromagnetic layer so that the buffer layer and the first ferromagnetic layer have a body centered cubic structure,
wherein the artificial antiferromagnetic layer includes a third ferromagnetic layer, a separation layer located on the third ferromagnetic layer, and a fourth ferromagnetic layer located on the separation layer.

2. The MTJ structure of claim 1 , wherein the third ferromagnetic layer or the fourth ferromagnetic layer includes a CoPd, CoPt, [Co/Pd] n , [Co/Pt] n , FePd, FePt, [Fe/Pd] n , or [Fe/Pt] n structure, wherein n is an integer greater than or equal to 1.

3. The MTJ structure of claim 1 , wherein the separation layer includes Ru, Ta, or Ir.

4. A magnetic element comprising:
a plurality of digit lines;
a plurality of bit lines configured to cross upper portions of the plurality of digit lines; and
the MTJ structure according to claim 1 , which is interposed between a digit line of the plurality of digit lines and a bit line of the plurality of bit lines.

Assignees

• Univ Hanyang Ind Univ Coop Found

Inventors

• Hong Jin Pyo
• Lee Ja Bin

Classifications

• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title

• H01F10/123

  having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films · CPC title

• H10N50/85

  Materials of the active region · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H10N50/10 Primary

  Magnetoresistive devices · CPC title