System and method for measuring junction temperature of power module

Patent metadata

Field	Value
Publication number	US-10697836-B2
Application number	US-201715644354-A
Country	US
Kind code	B2
Filing date	Jul 7, 2017
Priority date	Dec 15, 2016
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

A system and method for measuring a junction temperature of a power module junction temperature are provided. The method is capable of improving accuracy of temperature measurement by more accurately applying temperature change in a junction temperature rising section, capable of more accurately predicting durability life of a power module, and capable of increasing output power of the power module.

First claim

What is claimed is:

1. A method for measuring a junction temperature of a first power semiconductor device included in a power module, comprising;
calculating, by a controller, a predicted temperature change value of the first power semiconductor device, based on a power loss and a predetermined thermal resistance of the first power semiconductor device subjected to junction temperature measurement using a sensor;
calculating, by the controller, a predicted temperature change value of a second power semiconductor device disposed proximate to the first power semiconductor device, based on a power loss and a predetermined thermal resistance of the second power semiconductor device using the sensor;
applying, by the controller, a predetermined first time constant to the predicted temperature change value of the first power semiconductor device, and applying a predetermined second time constant having a value greater than the first time constant to the predicted temperature change value of the second power semiconductor device;
deriving, by the controller, a final junction temperature of the first power semiconductor device, by combining the predicted temperature change value of the first power semiconductor device applied with the first time constant, and the predicted temperature change value of the second power semiconductor device applied with the second time constant; and
increasing output of the first power semiconductor device, by the controller, the output being increased by applying the second time constant to delay entry to a derating level of the first power semiconductor device, the output being increased based on the final junction temperature.

2. The method of claim 1 , wherein the calculating the predicted temperature change value of the first power semiconductor device includes:
calculating, by the controller, the power loss of the first power semiconductor device, based on an input voltage, an input current, and a switching frequency thereof; and
deriving, by the controller, the predicted temperature change value of the first power semiconductor device by multiplying the thermal resistance thereof with the power loss thereof.

3. The method of claim 1 , wherein the calculating the predicted temperature change value of the second power semiconductor device includes:
calculating, by the controller, the power loss of the second power semiconductor device, based on an input voltage, an input current, and a switching frequency thereof; and
deriving, by the controller, the predicted temperature change value of the second power semiconductor device by multiplying the thermal resistance thereof with the power loss thereof.

4. The method of claim 2 , wherein the power module includes a coolant passage in which a coolant flows so as to cool the first and second power semiconductor devices, and
wherein the thermal resistance of the first power semiconductor device has a value predetermined based on a flow rate of the coolant flowing in the coolant passage within the power module.

5. The method of claim 3 , wherein the power module includes a coolant passage in which a coolant flows so as to cool the first and second power semiconductor devices, and
wherein the thermal resistance of the second power semiconductor device has a value predetermined based on a flow rate of the coolant flowing in the coolant passage within the power module.

6. The method of claim 1 , wherein the power module includes a coolant passage in which a coolant flows so as to cool the first and second power semiconductor devices, and
wherein the deriving of the final junction temperature is performed by summing the predicted temperature change value of the first power semiconductor device applied with the first time constant, and the predicted temperature change value of the second power semiconductor device applied with the second time constant, and by summing the summed value and a temperature of the coolant flowing in the coolant passage within the power module.

7. A system for measuring a junction temperature of a first power semiconductor device included in a power module, comprising;
a memory configured to store program instructions; and
a processor configured to execute the program instructions, the program instructions when executed configured to:
calculate a predicted temperature change value of the first power semiconductor device, based on a power loss and a predetermined thermal resistance of the first power semiconductor device subjected to junction temperature measurement using a sensor;
calculate a predicted temperature change value of a second power semiconductor device disposed proximate to the first power semiconductor device, based on a power loss and a predetermined thermal resistance of the second power semiconductor device using the sensor;
supply a predetermined first time constant to the predicted temperature change value of the first power semiconductor device, and apply a predetermined second time constant having a value greater than the first time constant to the predicted temperature change value of the second power semiconductor device;
derive a final junction temperature of the first power semiconductor device, by combining the predicted temperature change value of the first power semiconductor device applied with the first time constant, and the predicted temperature change value of the second power semiconductor device applied with the second time constant; and
increase output of the first power semiconductor device, the output being increased by applying the second time constant to delay entry to a derating level of the first power semiconductor device, the output being increased based on the final junction temperature.

8. The system of claim 7 , wherein the program instructions that calculate the predicted temperature change value of the first power semiconductor device when executed are further configured to:
calculate the power loss of the first power semiconductor device, based on an input voltage, an input current, and a switching frequency thereof; and
derive the predicted temperature change value of the first power semiconductor device by multiplying the thermal resistance thereof with the power loss thereof.

9. The system of claim 8 , wherein the program instructions that calculate the predicted temperature change value of the second power semiconductor device when executed are further configured to:
calculate the power loss of the second power semiconductor device, based on an input voltage, an input current, and a switching frequency thereof; and
derive the predicted temperature change value of the second power semiconductor device by multiplying the thermal resistance thereof with the power loss thereof.

Assignees

• Hyundai Motor Co Ltd
• Kia Motors Corp

Inventors

• Lee Je Hwan
• Jang Han Geun
• Lee Seong Min
• Shin Sang Cheol
• Kwak Heon Young

Classifications

• G01R19/25

  using digital measurement techniques · CPC title

• G01R19/12

  Measuring rate of change · CPC title

• G01K7/425

  Thermal management of integrated systems · CPC title

• G01K7/01 Primary

  using semiconducting elements having PN junctions (G01K7/02, G01K7/16, G01K7/30 take precedence) · CPC title

• H03K2217/0027

  Measuring means of, e.g. currents through or voltages across the switch · CPC title