Process for producing trichlorosilane
US-9321653-B2 · Apr 26, 2016 · US
Preparation of trichlorosilane
US10696556B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10696556-B2 |
| Application number | US-201414907957-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 22, 2014 |
| Priority date | Jul 31, 2013 |
| Publication date | Jun 30, 2020 |
| Grant date | Jun 30, 2020 |
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Abstract
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The selectivity of a process for preparing trichlorosilane (TCS) by reaction of metallurgical silicon (mg-Si) and HCl, is improved by utilizing mg-Si having a titanium content greater than 0.06 wt %.
First claim
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The invention claimed is: 1. A process for preparing trichlorosilane (TCS), comprising reacting metallurgical silicon (mg-Si) having a titanium content of 0.08 wt % to 0.12 wt. %, and a phosphorus content ≥30 ppmw with HCl. 2. The process of claim 1 , wherein the mg-Si has a phosphorus content between 30 ppmw and 50 ppmw. 3. The process of claim 1 , wherein the mg-Si has a phosphorus content greater than or equal to 30 ppmw and less than or equal to 41 ppmw. 4. The process of claim 1 , wherein the mg-Si is prepared by solidification from a melt of mg-Si, and exhibits a maximum mean thickness of 30 mm or a maximum mean diameter of 15 mm immediately following solidification. 5. The process of claim 2 , wherein the mg-Si is prepared by solidification from a melt of mg-Si, and exhibits a maximum mean thickness of 30 mm or a maximum mean diameter of 15 mm immediately following solidification. 6. The process of claim 3 , wherein the mg-Si is prepared by solidification from a melt of mg-Si, and exhibits a maximum mean thickness of 30 mm or a maximum mean diameter of 15 mm immediately following solidification. 7. The process of claim 4 , wherein the mg-Si has been prepared by water granulation. 8. The process as claimed of claim 1 , wherein the mg-Si has an Si content greater than 98 wt %. 9. The process of claim 1 , wherein reacting is effected at a temperature of from 280 to 400° C. 10. The process of claim 1 , wherein reacting is effected at a temperature of from 320 to 380° C. 11. The process of claim 1 , wherein reacting is effected at a pressure of from 0.1 to 30 bar. 12. The process of claim 9 , wherein reacting is effected at a pressure of from 0.1 to 30 bar. 13. The process of claim 1 , wherein reacting is effected at a pressure of from 1 to 4 bar. 14. The process of claim 9 , wherein reacting is effected at a pressure of from 1 to 4 bar. 15. A process for preparing trichlorosilane (TCS), comprising reacting metallurgical silicon (mg-Si) having a titanium content of 0.06 wt % to 0.12 wt. %, and a phosphorus content ≥30 ppmw with HCl, wherein the mg-Si is prepared by solidification from a melt of mg-Si, and exhibits a maximum mean thickness of 30 mm or a maximum mean diameter of 15 mm immediately following solidification. 16. The process of claim 15 , wherein the mg-Si has been prepared by water granulation.
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- C01B33/10763Primary
from silicon · CPC title
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- What does patent US10696556B2 cover?
- The selectivity of a process for preparing trichlorosilane (TCS) by reaction of metallurgical silicon (mg-Si) and HCl, is improved by utilizing mg-Si having a titanium content greater than 0.06 wt %.
- Who is the assignee on this patent?
- Wacker Chemie Ag
- What technology area does this patent fall under?
- Primary CPC classification C01B33/10763. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jun 30 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).