Bonding method using a carbon nanotube structure

Patent metadata

Field	Value
Publication number	US-10696032-B2
Application number	US-201816119700-A
Country	US
Kind code	B2
Filing date	Aug 31, 2018
Priority date	Dec 28, 2017
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

A bonding method utilizing carbon nanotubes provides first and second objects to be bonded and a carbon nanotube structure. The carbon nanotube structure comprises a super-aligned carbon nanotube film comprising carbon nanotubes, the carbon nanotubes extending substantially along a same direction. The carbon nanotube structure is laid on surface of first object and surface of second object is pressed onto the carbon nanotube structure. Pressure being applied to the first object and the second object bonds the two together.

First claim

What is claimed is:

1. A bonding method comprising:
providing a first object comprising a first surface and a second object comprising a second surface, wherein both the first surface and the second surface have a surface roughness less than or equal to 1.0 micrometer;
laying a carbon nanotube structure on and in direct contact with the first surface, wherein the carbon nanotube structure comprises a super-aligned carbon nanotube film, the super-aligned carbon nanotube film comprises a plurality of carbon nanotubes, the plurality of carbon nanotubes extends substantially along a same direction, and an extending direction of the plurality of carbon nanotubes is substantially parallel to a surface of the super-aligned carbon nanotube film, the first surface and the second surface;
laying the second object on and in direct contact with the carbon nanotube structure, wherein the carbon nanotube structure is located between the first object and the second object; and
applying a pressure to the first object and the second object, to bond the first object to the second object, wherein a three-layer structure is formed by the first object, the carbon nanotube structure and the second object.

2. The bonding method of claim 1 , wherein the laying the carbon nanotube structure on and in direct contact with the first surface comprises:
providing a super-aligned carbon nanotube array;
drawing the super-aligned carbon nanotube film from the super-aligned carbon nanotube array; and
directly laying the super-aligned carbon nanotube film on the first surface.

3. The bonding method of claim 2 , wherein the laying the carbon nanotube structure on and in direct contact with the first surface further comprises:
stretching the super-aligned carbon nanotube film along the extend direction of the plurality of carbon nanotubes of the super-aligned carbon nanotube film after drawing the super-aligned carbon nanotube film from the super-aligned carbon nanotube array and before directly laying the super-aligned carbon nanotube film on the first surface.

4. The bonding method of claim 3 , wherein a stretch length of stretching the super-aligned carbon nanotube film along the extend direction of the plurality of carbon nanotubes of the super-aligned carbon nanotube film is from about 1 millimeter to about 3 millimeters.

5. The bonding method of claim 1 , wherein the laying the carbon nanotube structure on and in direct contact with the first surface comprises:
drawing at least one super-aligned carbon nanotube film from a super-aligned carbon nanotube array;
laying the at least one super-aligned carbon nanotube film on a support structure, to form the carbon nanotube structure; and
transferring the carbon nanotube structure from the support structure to the first surface.

6. The bonding method of claim 5 , wherein the support structure is a frame structure, the carbon nanotube structure is partially suspended to form a suspended portion; and the transferring the carbon nanotube structure from the support structure to the first surface comprises directly placing the suspended portion on the first surface; and then removing the frame structure.

7. The bonding method of claim 1 , further comprising cooling the three-layer structure to about −196° C.˜−100° C.

8. The bonding method of claim 1 , further comprising heating the three-layer structure to about 800° C.˜1000° C.

9. The bonding method of claim 1 , wherein the bonding method is performed at a temperature from about −196° C. to about 1000° C.

10. The bonding method of claim 9 , wherein the bonding method is performed at the temperature from about −196° C. to about −100° C.

11. The bonding method of claim 9 , wherein the bonding method is performed at the temperature from about 800° C. to about 1000° C.

12. The bonding method of claim 1 , wherein the surface roughness of the first surface and the second surface are both less than or equal to 100 nanometers.

13. The bonding method of claim 1 , wherein the plurality of carbon nanotubes are pure carbon nanotubes.

14. The bonding method of claim 1 , wherein the carbon nanotube structure comprises 10˜15 layers of the super-aligned carbon nanotube films overlapped and paralleled with each other.

15. A bonding method comprising:
providing a first object comprising a first surface and a second object comprising a second surface, wherein both the first surface and the second surface have a surface roughness less than or equal to 1.0 micrometer;
sandwiching a carbon nanotube structure between the first object and the second object, and in direct contact with the first surface and the second surface, wherein the carbon nanotube structure consists of a super-aligned carbon nanotube film, the super-aligned carbon nanotube film consists of a plurality of carbon nanotubes, the plurality of carbon nanotubes extends substantially along a same direction, and an extending direction of the plurality of carbon nanotubes is substantially parallel to a surface of the super-aligned carbon nanotube film, the first surface and the second surface; and
applying a pressure to the first object and the second object, to bond the first object to the second object, wherein a three-layer structure is formed by the first object, the carbon nanotube structure and the second object.

16. The bonding method of claim 15 , wherein the three-layer structure is free of organic solvent.

17. The bonding method of claim 15 , further comprising cooling the three-layer structure to about −196° C.˜−100° C.

18. The bonding method of claim 15 , further comprising heating the three-layer structure to about 800° C.˜1000° C.

19. The bonding method of claim 15 , wherein the bonding method is performed at a temperature from about −196° C. to about −100° C.

20. The bonding method of claim 15 , wherein the bonding method is performed at a temperature from about 800° C. to about 1000° C.

Assignees

• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Jin Xiang
• Wu zi-peng
• Miao Wen-Tao
• Jiang Kai-Li
• Fan Shou-Shan

Classifications

• B32B7/035

  using arrangements of stretched films, e.g. of mono-axially stretched films arranged alternately · CPC title

• B32B9/007

  comprising carbon, e.g. graphite, composite carbon · CPC title

• B32B2457/14

  Semiconductor wafers · CPC title

• B32B9/045

  of synthetic resin · CPC title

• B32B9/04

  comprising such {particular} substance as the main or only constituent of a layer, {which is} next to another layer of {the same or of} a {different material (next to a glass layer B32B17/06; layered products with at least two ceramic layers composed mainly of ceramic B32B18/00)} · CPC title