Semiconductor chip and method for producing a semiconductor chip

Patent metadata

Field	Value
Publication number	US-10693033-B2
Application number	US-201916452015-A
Country	US
Kind code	B2
Filing date	Jun 25, 2019
Priority date	May 13, 2016
Publication date	Jun 23, 2020
Grant date	Jun 23, 2020

Abstract

A semiconductor chip ( 100 ) is provided, having a first semiconductor layer ( 1 ), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip ( 100 ).

First claim

What is claimed is:

1. A semiconductor chip, having a semiconductor layer sequence with a first semiconductor layer, the first semiconductor layer having a lateral variation of a material composition and a constant thickness along at least one direction of extent, wherein
the semiconductor chip is embodied as a laser diode chip having a laser strip, in which light is generated during operation, and a facet, via which the light is emitted during the operation,
the first semiconductor layer has at least one first region and has second regions laterally adjacent to the at least one first region,
the first region and the second regions comprise a same material system,
a material composition of the first region is different from a material composition of the second regions, wherein the first region and the second regions have a same thickness,
the first region is formed in a region of the laser strip, and
the second regions are formed, in a lateral direction transversely in relation to a direction of extent of the laser strip, on both sides next to the laser strip.

2. The semiconductor chip according to claim 1 , wherein a second region of the second regions is embodied as a facet region adjoining the facet, and is formed between the facet and the first region.

3. The semiconductor chip according to claim 2 , wherein the material compositions of the first region and the second regions are selected such that an energy gap in the second regions is greater than an energy gap in the first region.

4. The semiconductor chip according to claim 1 , wherein the first region adjoins the facet.

5. The semiconductor chip according to claim 4 , wherein the material compositions of the first region and the second regions are selected such that an energy gap in the second regions is less than an energy gap in the first region.

6. The semiconductor chip according to claim 1 , wherein the laser strip has a width which is defined substantially by the width of a contact region between a contact layer and the semiconductor layer sequence and/or by a ridge waveguide structure in a second semiconductor layer of the semiconductor layer sequence.

7. The semiconductor chip according to claim 6 , wherein the first region has a width which substantially corresponds to the width of the laser strip and/or a width of the ridge waveguide structure.

8. The semiconductor chip according to claim 6 , wherein the first region has a width which is greater than the width of the laser strip and/or a width of the ridge waveguide structure.

9. The semiconductor chip according to claim 6 , wherein the first region has a width which is less than the width of the laser strip and/or a width of the ridge waveguide structure.

10. The semiconductor chip according to claim 1 , wherein the semiconductor chip has a ridge waveguide structure.

11. The semiconductor chip according to claim 1 , wherein the semiconductor chip is without a ridge waveguide structure.

12. The semiconductor chip according to claim 1 , wherein the semiconductor chip has a plurality of laser strips and a plurality of strip-type first regions, which are separated from each other by a plurality of second strips.

13. The semiconductor chip according to claim 1 , wherein the first semiconductor layer is at least a part of an active layer.

14. The semiconductor chip according to claim 1 , wherein the first semiconductor layer is based on a material system InAlGaN, and an In content is varied for a purpose of the lateral variation of the material composition.

15. The semiconductor chip according to claim 1 , wherein the lateral variation of the material composition has, at least partly, a stepped characteristic.

16. The semiconductor chip according to claim 1 , wherein the lateral variation of the material composition has, at least partly, a continuous characteristic.

17. A method for producing the semiconductor chip according to claim 1 , in which, during a growth process for growing the first semiconductor layer, an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer, such that the lateral variation of the material composition of the first semiconductor layer is produced.

Assignees

• Osram Oled Gmbh

Inventors

• Lell Alfred
• Löffler Andreas
• Eichler Christoph
• Stojetz Bernhard
• Somers André

Classifications

• H10P72/7621

  characterised by supporting two or more semiconductor substrates · CPC title

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P72/0436 Primary

  mainly by radiation · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/01335

  the light-emitting regions comprising nitride materials · CPC title