Method of providing an imaging system and imaging system thereof

Patent metadata

Field	Value
Publication number	US-10692892-B2
Application number	US-201916601411-A
Country	US
Kind code	B2
Filing date	Oct 14, 2019
Priority date	Dec 22, 2014
Publication date	Jun 23, 2020
Grant date	Jun 23, 2020

Abstract

Some embodiments include an imaging system. The imaging system can comprise: a scintillator structure; and an electronic device engaged with the scintillator structure, wherein: the scintillator structure can comprise: a scintillator support layer; and a scintillator layer; the scintillator support layer can comprise: a first substantially non-planar surface; and a second substantially non-planar surface, the first substantially non-planar surface can be approximately parallel to the second substantially non-planar surface; the electronic device can comprise a device substrate and one or more active sections; the device substrate can comprise a first surface and a second surface opposite the first surface of the device substrate; the one or more active sections are at the second surface of the device substrate; and the second surface of the device substrate and the one or more active sections can conform to the second surface of the scintillator layer. Other embodiments are described herein.

First claim

What is claimed is:

1. An imaging system comprising:
a scintillator structure; and
an electronic device engaged with the scintillator structure, wherein:
the scintillator structure comprises:
a scintillator support layer; and
a scintillator layer;

the scintillator support layer comprises:
a first substantially non-planar surface;
a second substantially non-planar surface, the first substantially non-planar surface being approximately parallel to the second substantially non-planar surface; and
a scintillator support layer thickness greater than approximately 200 micrometers and less than or equal to approximately 300 micrometers;

the scintillator layer comprises:
a first surface;
a second surface opposite the first surface, the second surface being configured to scintillate; and
one or more granular phosphor materials comprising a diameter of greater than or equal to approximately 2 micrometers and less than or equal to approximately 30 micrometers;

the first surface of the scintillator layer is coupled to the second substantially non-planar surface of the scintillator support layer such that the second surface of the scintillator layer comprises a contour of the second substantially non-planar surface of the scintillator support layer;
the electronic device comprises a device substrate and one or more active sections;
the device substrate comprises a first surface and a second surface opposite the first surface of the device substrate;
the one or more active sections are at the second surface of the device substrate; and
the second surface of the device substrate and the one or more active sections conform to the second surface of the scintillator layer.

2. The imaging system of claim 1 , wherein the device substrate comprises a device substrate thickness of less than or equal to approximately 25 micrometers.

3. The imaging system of claim 1 , wherein the scintillator layer comprises one or more scintillator layer materials, and the one or more scintillator layer materials comprise terbium doped gadolinium oxysulfide.

4. The imaging system of claim 1 , wherein the scintillator support layer comprises one or more scintillator support layer materials, and the one or more scintillator support layer materials comprise at least one thermoplastic polymer.

5. The imaging system of claim 1 , wherein the scintillator layer comprises a scintillator layer thickness greater than or equal to approximately 50 micrometers and less than or equal to approximately 150 micrometers.

6. The imaging system of claim 1 , wherein:
each respective active section of the one or more active sections comprises at least one respective semiconductor device; and
each respective semiconductor device of the at least one respective semiconductor device comprises at least one respective detector pixel.

7. The imaging system of claim 1 , wherein the electronic device is coupled to the scintillator structure.

8. The imaging system of claim 1 , wherein the first substantially non-planar surface and the second substantially non-planar surface comprise a non-planar manifold.

9. The imaging system of claim 1 , wherein the scintillator layer is located over the scintillator support layer.

10. The imaging system of claim 1 , wherein the device substrate further comprises a flexible substrate.

11. An imaging system comprising:
a scintillator structure; and
an electronic device engaged with the scintillator structure, wherein:
the scintillator structure comprises:
a scintillator support layer; and
a scintillator layer;

the scintillator support layer comprises:
a substantially non-planar surface;
a test surface opposite and approximately parallel to the substantially non-planar surface; and
a scintillator support layer thickness greater than approximately 200 micrometers and less than or equal to approximately 300 micrometers;

the scintillator layer comprises:
a first surface;
a second surface opposite the first surface, the second surface being configured to scintillate; and
one or more granular phosphor materials comprising a diameter of greater than or equal to approximately 2 micrometers and less than or equal to approximately 30 micrometers;

the first surface of the scintillator layer is coupled to the substantially non-planar surface of the scintillator support layer such that the second surface of the scintillator layer comprises a contour of the substantially non-planar surface of the scintillator support layer;
the test surface of the scintillator support layer complements the contour of the substantially non-planar surface of the scintillator support layer;
the electronic device comprises a device substrate and one or more active sections;
the device substrate comprises a first surface and a second surface opposite the first surface of the device substrate;
the one or more active sections are at the second surface of the device substrate; and
the second surface of the device substrate and the one or more active sections conform to the second surface of the scintillator layer.

12. The imaging system of claim 11 , wherein the device substrate comprises a device substrate thickness of less than or equal to approximately 25 micrometers.

13. The imaging system of claim 11 , wherein the scintillator layer comprises one or more scintillator layer materials, and the one or more scintillator layer materials comprise terbium doped gadolinium oxysulfide.

14. The imaging system of claim 11 , wherein the scintillator support layer comprises one or more scintillator support layer materials, and the one or more scintillator support layer materials comprise at least one thermoplastic polymer.

15. The imaging system of claim 11 , wherein the scintillator layer comprises a scintillator layer thickness greater than or equal to approximately 50 micrometers and less than or equal to approximately 150 micrometers.

16. The imaging system of claim 11 , wherein:
each respective active section of the one or more active sections comprises at least one respective semiconductor device; and
each respective semiconductor device of the at least one respective semiconductor device comprises at least one respective detector pixel.

17. The imaging system of claim 11 , wherein the electronic device is coupled to the scintillator structure.

18. The imaging system of claim 11 , wherein the substantially non-planar surface comprises a non-planar manifold.

19. The imaging system of claim 11 , wherein the scintillator layer is located over the scintillator support layer.

20. The imaging system of claim 11 , wherein the device substrate further comprises a flexible substrate.

Assignees

• Smith Joseph
• Bottesch Rita
• Stowell John
• Univ Arizona State

Inventors

• Smith Joseph
• Bottesch Rita
• Stowell John

Classifications

• H10P72/7426

  used as a support during build up manufacturing of active devices · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10W70/692

  Ceramics or glasses · CPC title