Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM

Patent metadata

Field	Value
Publication number	US-10686123-B2
Application number	US-201815999229-A
Country	US
Kind code	B2
Filing date	Aug 16, 2018
Priority date	Aug 16, 2018
Publication date	Jun 16, 2020
Grant date	Jun 16, 2020

Abstract

A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the second magnetic free layer has higher magnetic damping (greater than 0.01) as compared with the first magnetic free layer. Such a multilayered magnetic free layer structure substantially reduces the switching current needed to reorient the magnetization of the magnetic free layers. The higher magnetic damping value of the second magnetic free layer as compared to the first magnetic free layer improves the switching speed of the magnetic free layers and thus reduces, and even eliminates, write errors.

First claim

What is claimed is:

1. A magnetic tunnel junction structure comprising:
a multilayered magnetic free layer structure comprising a first magnetic free layer having a first magnetic damping value and a second magnetic free layer having a second magnetic damping value separated by a non-magnetic layer, wherein the second magnetic damping value is greater than the first magnetic damping value and is 0.01 or greater and the first magnetic free layer and the second magnetic free layer are coupled together magnetically so that in equilibrium the first and second magnetic free layers have magnetizations that are parallel to each other.

2. The magnetic tunnel junction structure of claim 1 , wherein the second magnetic damping value is provided by at least one discrete heavy metal layer embedded in the second magnetic free layer.

3. The magnetic tunnel junction structure of claim 2 , wherein the at least one discrete heavy metal layer comprises a noble metal, a refractory metal, a rare earth metal or alloys thereof.

4. The magnetic tunnel junction structure of claim 2 , wherein the at least one discrete heavy metal layer has a thickness from 0.1 nm to 2 nm.

5. The magnetic tunnel junction structure of claim 2 , further comprising a tunnel barrier layer located on a surface of the first magnetic free layer opposite a surface of the first magnetic free layer that forms an interface with the non-magnetic layer, and a magnetic reference layer located on a surface of the tunnel barrier layer that is opposite the surface of the tunnel barrier that forms an interface with the first magnetic free layer.

6. The magnetic tunnel junction structure of claim 1 , wherein the second magnetic damping value is provided by a discrete heavy metal cap located at a top of the second magnetic free layer.

7. The magnetic tunnel junction structure of claim 6 , wherein the at least one discrete heavy metal cap comprises a noble metal, a refractory metal, a rare earth metal or alloys thereof.

8. The magnetic tunnel junction structure of claim 6 , further comprising a tunnel barrier layer located on a surface of the first magnetic free layer opposite a surface of the first magnetic free layer that forms an interface with the non-magnetic layer, and a magnetic reference layer located on a surface of the tunnel barrier layer that is opposite the surface of the tunnel barrier that forms an interface with the first magnetic free layer.

9. The magnetic tunnel junction structure of claim 1 , wherein the second magnetic damping value is provided by at least one heavy metal dopant or alloying element that is incorporated into the second magnetic free layer.

10. The magnetic tunnel junction structure of claim 9 , wherein the at least one heavy metal dopant comprises a noble metal, a refractory metal, or a rare earth metal.

11. The magnetic tunnel junction structure of claim 9 , wherein the at least one heavy metal dopant or alloying element is present in the second magnetic free layer in a concentration from 0.1% to 20%.

12. The magnetic tunnel junction structure of claim 9 , further comprising a tunnel barrier layer located on a surface of the first magnetic free layer opposite a surface of the first magnetic free layer that forms an interface with the non-magnetic layer, and a magnetic reference layer located on a surface of the tunnel barrier layer that is opposite the surface of the tunnel barrier that forms an interface with the first magnetic free layer.

13. A spin-transfer torque magnetic random access memory comprising:
a magnetic tunnel junction structure comprising a multilayered magnetic free layer structure of a first magnetic free layer having a first magnetic damping value and a second magnetic free layer having a second magnetic damping value separated by a non-magnetic layer, the second magnetic damping value is greater than the first magnetic damping value and is 0.01 or greater, and the first magnetic free layer and the second magnetic free layer are coupled together magnetically so that in equilibrium the first and second magnetic free layers have magnetizations that are parallel to each other.

14. The spin-transfer torque magnetic random access memory of claim 13 , wherein the second magnetic damping value is provided by at least one discrete heavy metal layer embedded in the second magnetic free layer.

15. The spin-transfer torque magnetic random access memory of claim 14 , wherein the at least one discrete heavy metal layer comprises a noble metal, a refractory metal, a rare earth metal or alloys thereof.

16. The spin-transfer torque magnetic random access memory of claim 14 , wherein the at least one discrete heavy metal layer has a thickness from 0.1 nm to 2 nm.

17. The spin-transfer torque magnetic random access memory of claim 14 , further comprising a tunnel barrier layer located on a surface of the first magnetic free layer opposite a surface of the first magnetic free layer that forms an interface with the non-magnetic layer, and a magnetic reference layer located on a surface of the tunnel barrier layer that is opposite the surface of the tunnel barrier that forms an interface with the first magnetic free layer.

18. The spin-transfer torque magnetic random access memory of claim 13 , wherein the second magnetic damping value is provided by a discrete heavy metal cap located at a top of the second magnetic free layer.

19. The spin-transfer torque magnetic random access memory of claim 18 , wherein the at least one discrete heavy metal layer comprises a noble metal, a refractory metal, a rare earth metal or alloys thereof.

20. The spin-transfer torque magnetic random access memory of claim 18 , further comprising a tunnel barrier layer located on a surface of the first magnetic free layer opposite a surface of the first magnetic free layer that forms an interface with the non-magnetic layer, and a magnetic reference layer located on a surface of the tunnel barrier layer that is opposite the surface of the tunnel barrier that forms an interface with the first magnetic free layer.

21. The spin-transfer torque magnetic random access memory of claim of 13 , wherein the second magnetic damping value is provided by at least one heavy metal dopant or alloying element incorporated into the second magnetic free layer.

22. The spin-transfer torque magnetic random access memory of claim 21 , wherein the at least one heavy metal dopant or alloying element comprises a noble metal, a refractory metal, or a rare earth metal.

23. The spin-transfer torque magnetic random access memory of claim 21 , wherein the at least one heavy metal dopant or alloying element is present in the second magnetic free layer in a concentration from 0.1% to 20%.

24. The spin-transfer torque magnetic random access memory of claim 21 , further comprising a tunnel barrier layer located on a surface of the first magnetic free layer opposite a surface of the first magnetic free layer that forms an interface with the non-magnetic layer, and a magnetic reference layer located on a surface of the tunnel barrier layer that is opposite the surface of the tunnel barrier that forms an interface with the first magnetic free layer.

25. A method of improving the performance of spin-transfer torque magnetic random access memory, the method comprising:
providing a multilayered magnetic free layer structure on a surface of a tunnel barrier that is located on a magnetic reference layer, wherein the multilayer

Assignees

• IBM

Inventors

• Hu Guohan
• Worledge Daniel

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H10N50/80 Primary

  Constructional details · CPC title

• H10N50/01

  Manufacture or treatment · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title

• H10N50/10

  Magnetoresistive devices · CPC title