MXene nanosheet and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10683208-B2
Application number	US-201615222345-A
Country	US
Kind code	B2
Filing date	Jul 28, 2016
Priority date	Sep 24, 2015
Publication date	Jun 16, 2020
Grant date	Jun 16, 2020

Abstract

A method of manufacturing a MXene nanosheet includes removing an A atomic layer from an inorganic compound having a formula of M n+1 AX n to form a nanosheet, the nanosheet having a formula of M n+1 X n T s , and reducing the nanosheet having a formula of M n+1 X n T s to form an MXene nanosheet, the MXene nanosheet having a formula of M n+1 X n , wherein M is at least one of Group 3 transition metal, Group 4 transition metal, Group 5 transition metal, and Group 6 transition metal, A is at least one of a Group 12 element, Group 13 element, Group 14 element, Group 15 element and Group 16 element, X is one of carbon (C), nitrogen (N) and a combination thereof, T s is one of oxide (O), epoxide, hydroxide (OH), alkoxide having 1-5 carbon atoms, fluoride (F), chloride (Cl), bromide (Br), iodide (I), and a combination thereof, and n is one of 1, 2 and 3.

First claim

What is claimed is:

1. A method of manufacturing an MXene nanosheet, the method comprising:
removing an A atomic layer from an inorganic compound having a formula of M n+1 AX n to form a nanosheet, the nanosheet having a formula of M n+1 X n T s ; and
reducing the nanosheet having the formula of M n+1 X n T s to form the MXene nanosheet, the MXene nanosheet having a formula of M n+1 X n ,
wherein M is at least one of Group 3 transition metal, Group 4 transition metal, Group 5 transition metal, and Group 6 transition metal,
A is at least one of a Group 12 element, Group 13 element, Group 14 element, Group 15 element and Group 16 element,
X is one of carbon (C), nitrogen (N) and a combination thereof,
T s is one of oxide (O), epoxide, hydroxide (OH), alkoxide having 1-5 carbon atoms, fluoride (F), chloride (Cl), bromide (Br), iodide (I), and a combination thereof, and
n is one of 1, 2 and 3.

2. The method of claim 1 , wherein M is at least one of scandium (Sc), yttrium (Y), lutetium (Lu), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo) and tungsten (W).

3. The method of claim 1 , wherein A is at least one of aluminum (Al), silicon (Si), phosphorus (P), sulfur (S), gallium (Ga), germanium (Ge), arsenic (As), cadmium (Cd), indium (In), tin (Sn), thallium (Tl) and lead (Pb).

4. The method of claim 1 , wherein the removing removes the atomic layer from the inorganic compound including at least one of Ti 2 CdC, Sc 2 InC, Ti 2 AlC, Ti 2 GaC, Ti 2 InC, Ti 2 TIC, V 2 AlC, V 2 GaC, Cr 2 GaC, Ti 2 AlN, Ti 2 GaN, Ti 2 InN, V 2 GaN, Cr 2 GaN, Ti 2 GeC, Ti 2 SnC, Ti 2 PbC, V 2 GeC, Cr 2 AlC, Cr 2 GeC, V 2 PC, V 2 AsC, Ti 2 SC, Zr 2 InC, Zr 2 TlC, Nb 2 AlC, Nb 2 GaC, Nb 2 InC, Mo 2 GaC, Zr 2 InN, Zr 2 TlN, Zr 2 SnC, Zr 2 PbC, Nb 2 SnC, Nb 2 PC, Nb 2 AsC, Zr 2 SC, Nb 2 SC, Hf 2 InC, Hf 2 TlC, Ta 2 AlC, Ta 2 GaC, Hf 2 SnC, Hf 2 PbC, Hf 2 SnN, Hf 2 SC Ti 3 AlC 2 , V 3 AlC 2 , Ti 3 SiC 2 , Ti 3 GeC 2 , Ti 3 SnC 2 , Ta 3 AlC 2 , Ti 4 AlN 3 , V 4 AlC 3 , Ti 4 GaC 3 , Ti 4 SiC 3 , Ti 4 GeC 3 , Nb 4 AlC 3 , and Ta 4 AlC 3 .

5. The method of claim 1 , wherein
the removing forms the nanosheet having a formula M n+1 X n (OH) x O y F z ; and
x, y or z represents a molar ratio of each functional group present on the surface per 1 mole of M n+1 X n .

6. The method of claim 1 , wherein the removing forms the nanosheet having a two-dimensional layered structure.

7. The method of claim 1 , wherein the removing removes the atomic layer under acidic conditions.

8. The method of claim 1 , wherein the removing removes the atomic layer using an acid containing a fluorine atom.

9. The method of claim 1 , wherein the removing removes the atomic layer using at least one of hydrofluoric acid (HF), LiHF 2 , NaHF 2 , KHF 2 , lithium fluoride (LiF), sodium fluoride (NaF), magnesium fluoride (MgF 2 ), strontium fluoride (SrF 2 ), beryllium fluoride (BeF 2 ), calcium fluoride (CaF 2 ), ammonium fluoride (NH 4 F), ammonium difluoride (NH 4 HF 2 ), ammonium hexafluoroaluminate ((NH 4 ) 3 AlF 6 ), combinations thereof, and combinations with at least one of hydrochloric acid, sulfuric acid, and nitric acid.

10. The method of claim 1 , wherein the removing removes the atomic layer at a temperature ranging from 20° C. to 800° C.

11. The method of claim 1 , wherein the reducing reduces the nanosheet using one of a chemical, thermal, and thermo-chemical reduction process.

12. The method of claim 1 , wherein the reducing reduces the nanosheet using a reducing agent.

13. The method of claim 12 , wherein the reducing agent is a combination of alkali metal and one of amine and ammonia (NH 3 ).

14. The method of claim 13 , wherein the alkali metal is at least one of lithium (Li), sodium (Na) and potassium (K).

15. The method of claim 13 , wherein the amine is at least one of ethylene diamine, methyl amine, and diisopropylamine.

16. The method of claim 13 , wherein the reducing reduces the nanosheet below a boiling point of amine or ammonia.

17. The method of claim 1 , further comprising:
neutralizing the MXene nanosheet using an acid after the reducing.

18. The method of claim 1 , further comprising:
drying the MXene nanosheet and an alcohol solvent at a temperature ranging from 100° C. to 200° C. under vacuum.

Assignees

• Samsung Electronics Co Ltd
• Research & Business Found Sungkyunkwan Univ

Inventors

• Shin Hyeonjin
• Lee Hyoyoung
• Yoon Yeoheung

Classifications

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• C01B21/06

  Binary compounds of nitrogen with metals, with silicon, or with boron, {or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron}(azides C01B21/08) · CPC title

• C01P2004/24

  Nanoplates, i.e. plate-like particles with a thickness from 1-100 nanometer · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• Y10T428/30

  Self-sustaining carbon mass or layer with impregnant or other layer · CPC title