Magnetoresistance effect device and high frequency device

Patent metadata

Field	Value
Publication number	US-10680570-B2
Application number	US-201816123675-A
Country	US
Kind code	B2
Filing date	Sep 6, 2018
Priority date	Sep 8, 2017
Publication date	Jun 9, 2020
Grant date	Jun 9, 2020

Abstract

Provided is a magnetoresistance effect device that functions as a high frequency device such as a high frequency filter or the like. The magnetoresistance effect device includes a magnetoresistance effect element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a first signal line configured to generate a high frequency magnetic field as a high frequency current flows, a direct current application terminal to which a power supply is able to be connected to cause a direct current to flow to the magnetoresistance effect element in a lamination direction, and an independent magnetic body configured to receive a high frequency magnetic field generated in the first signal line to oscillate magnetization and apply a magnetic field generated through the magnetization to the magnetoresistance effect element.

First claim

What is claimed is:

1. A magnetoresistance effect device comprising:
a magnetoresistance effect element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer;
a first port configured for a high frequency signal to be input;
a second port configured for a high frequency signal to be output;
a first signal line connected to the first port and configured to generate a high frequency magnetic field when a high frequency current corresponding to the high frequency signal input into the first port flows;
a second signal line;
a direct current application terminal to which a power supply is able to be connected to cause a direct current to flow to the magnetoresistance effect element in a lamination direction; and
an independent magnetic body configured to receive a high frequency magnetic field generated in the first signal line to oscillate magnetization and apply a magnetic field generated through the magnetization to the magnetoresistance effect element, wherein
the magnetoresistance effect element is connected to the second port via the second signal line, and
the direct current application terminal is connected to the magnetoresistance effect element.

2. The magnetoresistance effect device according to claim 1 , wherein a resonance frequency of the independent magnetic body is smaller than a resonance frequency of the first ferromagnetic layer and the second ferromagnetic layer.

3. The magnetoresistance effect device according to claim 2 , further comprising:
a low pass filter configured to reduce a part of a signal output to the outside, wherein the low pass filter allows a frequency smaller than the resonance frequency of the first ferromagnetic layer and the second ferromagnetic layer to pass therethrough.

4. The magnetoresistance effect device according to claim 1 , wherein a volume of the independent magnetic body is 100 times or more a volume of the first ferromagnetic layer or the second ferromagnetic layer.

5. The magnetoresistance effect device according to claim 2 , wherein a volume of the independent magnetic body is 100 times or more a volume of the first ferromagnetic layer or the second ferromagnetic layer.

6. The magnetoresistance effect device according to claim 1 , wherein a damping constant of the independent magnetic body is 0.005 or less.

7. The magnetoresistance effect device according to claim 2 , wherein a damping constant of the independent magnetic body is 0.005 or less.

8. The magnetoresistance effect device according to claim 1 , wherein the independent magnetic body is an insulating material.

9. The magnetoresistance effect device according to claim 1 , wherein the independent magnetic body is an electrical conductor.

10. The magnetoresistance effect device according to claim 1 , further comprising:
a magnetic field application mechanism configured to apply an external magnetic field to the independent magnetic body, and modulate a resonance frequency of at least one of the independent magnetic body, the first ferromagnetic layer and the second ferromagnetic layer.

11. The magnetoresistance effect device according to claim 1 , further comprising:
a bias magnetic layer configured to apply an external magnetic field to the first ferromagnetic layer or the second ferromagnetic layer of the magnetoresistance effect element, and modulate a resonance frequency of the first ferromagnetic layer or the second ferromagnetic layer.

12. The magnetoresistance effect device according to claim 1 , wherein a plurality of magnetoresistance effect elements are provided, and the plurality of magnetoresistance effect elements are disposed with respect to the one independent magnetic body.

13. The magnetoresistance effect device according to claim 1 , wherein a plurality of magnetoresistance effect elements and a plurality of independent magnetic bodies are provided, and each independent magnetic body is disposed with respect to one magnetoresistance effect element, respectively.

14. The magnetoresistance effect device according to claim 12 , wherein at least some of the plurality of magnetoresistance effect elements are arranged parallel to each other.

15. The magnetoresistance effect device according to claim 12 , wherein at least some of the plurality of magnetoresistance effect elements are arranged in series.

16. The magnetoresistance effect device according to claim 12 , wherein each of the plurality of magnetoresistance effect elements has an output signal line through which a high frequency current output from the magnetoresistance effect element flows, and at least one of the output signal lines is disposed at a position where a high frequency magnetic field is applied to the independent magnetic body configured to apply a magnetic field to at least one of the plurality of magnetoresistance effect elements.

17. The magnetoresistance effect device according to claim 13 , wherein at least some of the plurality of magnetoresistance effect elements are arranged parallel to each other.

18. The magnetoresistance effect device according to claim 13 , wherein at least some of the plurality of magnetoresistance effect elements are arranged in series.

19. The magnetoresistance effect device according to claim 13 , wherein each of the plurality of magnetoresistance effect elements has an output signal line through which a high frequency current output from the magnetoresistance effect element flows, and at least one of the output signal lines is disposed at a position where a high frequency magnetic field is applied to the independent magnetic body configured to apply a magnetic field to at least one of the plurality of magnetoresistance effect elements.

20. A high frequency device using the magnetoresistance effect device according to claim 1 .

Assignees

• Tdk Corp

Inventors

• Yamane Takekazu

Classifications

• H03H2/00 Primary

  Networks using elements or techniques not provided for in groups H03H3/00 - H03H21/00 · CPC title

• H01L43/10

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• H03B15/006 Primary

  using spin transfer effects or giant magnetoresistance · CPC title

• H01L43/02

  Electricity · mapped topic