Magnetoresistive effect device

Patent metadata

Field	Value
Publication number	US-9948267-B2
Application number	US-201715439640-A
Country	US
Kind code	B2
Filing date	Feb 22, 2017
Priority date	Feb 23, 2016
Publication date	Apr 17, 2018
Grant date	Apr 17, 2018

Abstract

A magnetoresistive effect device includes at least one magnetoresistive effect element including a magnetization fixed layer, a spacer layer, and a magnetization free layer, a first port, a second port, a first signal line which is connected to the first port and through which high-frequency current corresponding to a high-frequency signal input into the first port flows, a second signal line, and a direct-current input terminal. The magnetoresistive effect element is arranged so that a high-frequency magnetic field occurring from the first signal line is applied to the magnetization free layer. The magnetoresistive effect element is connected to the second port via the second signal line. The direct-current input terminal is connected to the magnetoresistive effect element.

First claim

What is claimed is:

1. A magnetoresistive effect device comprising:
at least one magnetoresistive effect element including a magnetization fixed layer, a spacer layer, and a magnetization free layer a direction of magnetization of which is capable of being varied;
a first port into which a high-frequency signal is input;
a second port from which a high-frequency signal is output;
a first signal line which is connected to the first port and through which high-frequency current corresponding to the high-frequency signal input into the first port flows;
a second signal line; and
a direct-current input terminal,
wherein the magnetoresistive effect element is arranged so that a high-frequency magnetic field occurring from the first signal line is applied to the magnetization free layer,
wherein the magnetoresistive effect element is connected to the second port via the second signal line, and
wherein the direct-current input terminal is connected to the magnetoresistive effect element.

2. The magnetoresistive effect device according to claim 1 , further comprising:
at least one frequency setting mechanism capable of setting a ferromagnetic resonance frequency of the magnetization free layer.

3. The magnetoresistive effect device according to claim 2 ,
wherein the frequency setting mechanism is an effective magnetic field setting mechanism capable of setting an effective magnetic field in the magnetization free layer and the ferromagnetic resonance frequency of the magnetization free layer is capable of being varied by varying the effective magnetic field.

4. The magnetoresistive effect device according to claim 1 ,
wherein an angle formed by a straight line parallel to a direction of magnetization of the magnetization fixed layer and a straight line parallel to the direction of the high-frequency magnetic field in the magnetization free layer is greater than or equal to five degrees and is smaller than or equal to 65 degrees.

5. The magnetoresistive effect device according to claim 4 ,
wherein the angle is greater than or equal to 20 degrees and is smaller than or equal to 55 degrees.

6. The magnetoresistive effect device according to claim 1 ,
wherein the at least one magnetoresistive effect element includes a plurality of magnetoresistive effect elements differing in their ferromagnetic resonance frequencies of the magnetization free layers and the plurality of magnetoresistive effect elements are connected in parallel to each other.

7. The magnetoresistive effect device according to claim 2 ,
wherein the at least one magnetoresistive effect element includes a plurality of magnetoresistive effect elements and the plurality of magnetoresistive effect elements are connected in parallel to each other, and
wherein the at least one frequency setting mechanism includes a plurality of frequency setting mechanisms so as to individually set the ferromagnetic resonance frequencies of the magnetization free layers in the plurality of magnetoresistive effect elements.

8. The magnetoresistive effect device according to claim 1 ,
wherein the at least one magnetoresistive effect element includes a plurality of magnetoresistive effect elements differing in their ferromagnetic resonance frequencies of the magnetization free layers and the plurality of magnetoresistive effect elements are connected in series to each other.

9. The magnetoresistive effect device according to claim 2 ,
wherein the at least one magnetoresistive effect element includes a plurality of magnetoresistive effect elements and the plurality of magnetoresistive effect elements are connected in series to each other, and
wherein the at least one frequency setting mechanism includes a plurality of frequency setting mechanisms so as to individually set the ferromagnetic resonance frequencies of the magnetization free layers in the plurality of magnetoresistive effect elements.

10. The magnetoresistive effect device according to claim 6 ,
wherein plan view shapes of the plurality of magnetoresistive effect elements differing in their ferromagnetic resonance frequencies of the magnetization free layers have different aspect ratios.

11. The magnetoresistive effect device according to claim 8 ,
wherein plan view shapes of the plurality of magnetoresistive effect elements differing in their ferromagnetic resonance frequencies of the magnetization free layers have different aspect ratios.

Assignees

• Tdk Corp

Inventors

• Yamane Takekazu
• Shibata Tetsuya
• Urabe Junichiro
• Shimura Atsushi

Classifications

• H03B15/00

  Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects · CPC title

• H03H7/06 Primary

  including resistors (H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence) · CPC title

• H03B15/006

  using spin transfer effects or giant magnetoresistance · CPC title

• H01L43/08

  Electricity · mapped topic

• H01L43/02

  Electricity · mapped topic