Pre-heat processes for millisecond anneal system
US-10262873-B2 · Apr 16, 2019 · US
Pre-heat processes for millisecond anneal system
US10679864B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10679864-B2 |
| Application number | US-201916364568-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 26, 2019 |
| Priority date | Feb 1, 2016 |
| Publication date | Jun 9, 2020 |
| Grant date | Jun 9, 2020 |
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Abstract
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Preheat processes for a millisecond anneal system are provided. In one example implementation, a heat treatment process can include receiving a substrate on a wafer support in a processing chamber of a millisecond anneal system; heating the substrate to an intermediate temperature; and heating the substrate using a millisecond heating flash. Prior to heating the substrate to the intermediate temperature, the process can include heating the substrate to a pre-bake temperature for a soak period.
First claim
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What is claimed is: 1. A method for thermally treating a substrate having a dielectric film in a millisecond anneal system, the method comprising: receiving a substrate in a processing chamber of a millisecond anneal system, the processing chamber having a wafer plane plate dividing the processing chamber into a top chamber and a bottom chamber; heating the substrate to a pre-bake temperature using one or more heat sources located proximate the bottom chamber; wherein during a soak period having a duration, the method comprises maintaining the temperature of the substrate at about the pre-bake temperature, wherein after the soak period, the method comprises heating the substrate using a ramp to increase the temperature of the substrate to an intermediate temperature; wherein after heating the substrate to increase the temperature of the substrate to an intermediate temperature, the method comprises heating the substrate using a heating flask; wherein the duration of the soak period is sufficient for one or more species to leave the dielectric film. 2. The method of claim 1 , wherein before or during the soak period, the method comprises admitting an ambient gas into the processing chamber. 3. The method of claim 2 , wherein the ambient gas comprises one or more of hydrogen, deuterium, ammonia, or hydrazine species. 4. The method of claim 1 , wherein before or during the soak period, the method comprises inducing a plasma in the processing chamber to create chemically reducing species. 5. The method of claim 1 , wherein the pre-bake temperature is in the range of about 200° C. to about 500° C. 6. The method of claim 1 , wherein the duration of the soak period is between about 0.5 seconds and about 10 minutes.
Assignees
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Classifications
- H01L21/324Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Temperature monitoring · CPC title
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- What does patent US10679864B2 cover?
- Preheat processes for a millisecond anneal system are provided. In one example implementation, a heat treatment process can include receiving a substrate on a wafer support in a processing chamber of a millisecond anneal system; heating the substrate to an intermediate temperature; and heating the substrate using a millisecond heating flash. Prior to heating the substrate to the intermediate te…
- Who is the assignee on this patent?
- Mattson Tech Inc, Beijing E Town Semiconductor Tech Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L21/324. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 09 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).