Tunnel junction laminated film, magnetic memory element, and magnetic memory
US-2024284803-A1 · Aug 22, 2024 · US
Magnetic devices having perpendicular magnetic tunnel junction
US9166144B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9166144-B2 |
| Application number | US-201414535315-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 6, 2014 |
| Priority date | Aug 24, 2010 |
| Publication date | Oct 20, 2015 |
| Grant date | Oct 20, 2015 |
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- Title
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Abstract
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Provided are magnetic memory devices with a perpendicular magnetic tunnel junction. The device includes a magnetic tunnel junction including a free layer structure, a pinned layer structure, and a tunnel barrier therebetween. The pinned layer structure may include a first magnetic layer having an intrinsic perpendicular magnetization property, a second magnetic layer having an intrinsic in-plane magnetization property, and an exchange coupling layer interposed between the first and second magnetic layers. The exchange coupling layer may have a thickness maximizing an antiferromagnetic exchange coupling between the first and second magnetic layers, and the second magnetic layer may exhibit a perpendicular magnetization direction, due at least in part to the antiferromagnetic exchange coupling with the first magnetic layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A magnetic tunnel junction device comprising: a free layer structure; a pinned layer structure; and a tunnel barrier between the free layer structure and the pinned layer structure, wherein the pinned layer structure comprises: a first magnetic layer having an intrinsic perpendicular magnetization property; a second magnetic layer having an intrinsic in-plane magnetization property and extrinsic perpendicular magnetization direction; and an exchan…
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- H01F10/3254Primary
Electricity · mapped topic
Electricity · mapped topic
Operations & Transport · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9166144B2 cover?
- Provided are magnetic memory devices with a perpendicular magnetic tunnel junction. The device includes a magnetic tunnel junction including a free layer structure, a pinned layer structure, and a tunnel barrier therebetween. The pinned layer structure may include a first magnetic layer having an intrinsic perpendicular magnetization property, a second magnetic layer having an intrinsic in-plan…
- Who is the assignee on this patent?
- Oh Sechung, Kim Ki Woong, Kim Younghyun, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H01F10/3254. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 20 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).