Chemical mechanical polishing slurry for cobalt applications

Patent metadata

Field	Value
Publication number	US-10676646-B2
Application number	US-201815984960-A
Country	US
Kind code	B2
Filing date	May 21, 2018
Priority date	May 25, 2017
Publication date	Jun 9, 2020
Grant date	Jun 9, 2020

Abstract

A slurry that polishes surfaces or substrates which includes cobalt. The slurry further comprises an anionic and/or cationic surfactant, each of which has a phosphate group, a long chain alkyl group, or both. The slurry also includes a corrosion inhibitor, abrasives, removal rate enhancers, solvents, pH adjustors, and chelating agents. The pH of the slurry is preferably 8 or higher.

First claim

What is claimed is:

1. A polishing slurry concentrate for use on cobalt substrates, comprising:
at least one surfactant, wherein the surfactant comprises one or more phosphate groups, a six to twenty-four carbon alkyl chain, and multiple ethylene oxide groups;
at least one azole selected from the group consisting of: a benzotriazole, a benzotriazole derivative, and a combination thereof;
a solvent;
a removal rate enhancer;
an abrasive;
a pH adjustor that is a base; and
a chelating agent;
wherein the composition polishes TEOS, TiN, and Ti at a faster rate than it polishes cobalt.

2. The concentrate of claim 1 , wherein the surfactant is present in an amount of 10 ppm to 2000 ppm, based on the total weight of the concentrate;
the azole is present in an amount of 20 ppm to 1%, based on the total weight of the concentrate;
the solvent is present in an amount of 50 ppm to 4%, based on the total weight of the concentrate;
the removal rate enhancer is present in an amount of 0.02% to 5%, based on the total weight of the concentrate;
the abrasive is present in an amount of 2% to 24%, based on the total weight of the concentrate;
the pH adjustor is present in an amount of 0.2% to 20%, based on the total weight of the concentrate; and
the chelating agent is present in an amount of 0.10% to 5%, based on the total weight of the concentrate.

3. The concentrate of claim 1 , wherein the surfactant is present in an amount of 15 ppm to 3000 ppm, based on the total weight of the concentrate;
the azole is present in an amount of 30 ppm to 1.5%, based on the total weight of the concentrate;
the solvent is present in an amount of 75 ppm to 6.0%, based on the total weight of the concentrate;
the removal rate enhancer is present in an amount of 0.03% to 7.5%, based on the total weight of the concentrate;
the abrasive is present in an amount of 3% to 36%, based on the total weight of the concentrate;
the pH adjustor is present in an amount of 0.3% to 30%, based on the total weight of the concentrate; and
the chelating agent is present in an amount of 0.15% to 7.5%, based on the total weight of the concentrate.

4. A point-of-use polishing slurry for use on cobalt substrates, comprising the concentrate of claim 1 , water, and an oxidizer, so that the surfactant is present in an amount of 5 ppm to 1000 ppm, based on the total weight of the slurry;
the azole is present in an amount of 10 ppm to 0.5%, based on the total weight of the slurry;
the solvent is present in an amount of 25 ppm to 2.0%, based on the total weight of the slurry;
the removal rate enhancer is present in an amount of 0.01% to 2.5%, based on the total weight of the slurry;
the abrasive is present in an amount of 1% to 12%, based on the total weight of the slurry; the pH adjustor is present in an amount of 0.1% to 10%, based on the total weight of the slurry;
the chelating agent is present in an amount of 0.05% to 2.5%, based on the total weight of the slurry; and
the oxidizer is present in an amount of 500 ppm to about 5%, based on the total weight of the POU slurry.

5. The slurry of claim 4 , wherein the azole is selected from the group consisting of benzotriazole, adenine, benzimidazole, thiabendazole, tolyltriazole, 1,2,3-triazole, 1,2,4-triazole, 1-hydroxybenzotriazole, 2-methylbenzothiazole, 2-aminobenzimidazole, 2-amino-5-ethyl-1,3,4-thiadazole, 3,5-diamino-1,2,4-triazole, 3-amino-5-methylpyrazole, 4-Amino-4H-1,2,4-triazole, 5-methylbenzotriazole, 5-chlorobenzotriazole, 5-aminotetrazole, and combinations thereof.

6. The slurry of claim 4 , wherein the solvent is selected from the group consisting of ethanol, 1-propanol, 2-propanol, n-butanol, propylene glycol, 2-methoxyethanol, 2-ethoxyethanol, propylene glycol propyl ether, ethylene glycol, and any combinations thereof.

7. The slurry of claim 4 , wherein the removal rate enhancer is selected from the group consisting of gluconic acid, lactic acid, citric acid, tartaric acid, malic acid, glycolic acid, malonic acid, formic acid, oxalic acid, acetic acid, propionic acid, peracetic acid, succinic acid, lactic acid, potassium acetate, potassium citrate, amino acetic acid, phenoxyacetic acid, bicine, phosphoric acid, diglycolic acid, glyceric acid, tricine, alanine, histidine, valine, phenylalanine, proline, glutamine, aspartic acid, glutamic acid, glycine, arginine, lysine, tyrosine, benzoic acid, and any combinations thereof.

8. The slurry of claim 4 , wherein the removal rate enhancer is an amino acid.

9. The slurry of claim 4 , wherein the abrasive is silica, comprising less than 100 parts per million of alcohol, less than 100 parts per million of ammonia, and less than 100 parts per billion of an alkali metal.

10. The slurry of claim 4 , wherein a size of the abrasives is from sixteen nanometers to one hundred eighty nanometers.

11. The slurry of claim 4 , wherein the pH adjustor is selected from the group consisting of ammonium hydroxide, sodium hydroxide, potassium hydroxide, cesium hydroxide, monoethanol amine, diethanol amine, triethanol amine, tetrabutyl ammonium hydroxide, tetrapropylammonium hydroxide, tetraethyl ammonium hydroxide tetramethyl ammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide, dimethyldipropylammonium hydroxide, benzyltrimethylammonium hydroxide, and any combinations thereof.

12. The slurry of claim 4 , wherein the chelating agent is selected from the group consisting of ethylenediaminetetracetic acid, iminodiacetic acid, N-hydroxyethyl-ethylenediaminetriacetic acid, nitrilotriacetic acid, diethylenetriaminepentacetic acid, hydroxyethylethylenediaminetriacetic acid, triethylenetetraaminehexaacetic acid, propionic acid, citric acid, malonic acid, maleic acid, tartaric acid, glycolic acid, lactic acid, malic acid, oxalic acid, succinic acid, glycine, alanine, serine, and combinations thereof.

13. The slurry of claim 4 , wherein the pH of the slurry is 8 or higher.

14. The slurry of claim 4 , wherein the oxidizer is selected from the group consisting of hydrogen peroxide, ammonium persulfate, silver nitrate, ferric nitrates or chlorides, per acids or salts, ozone water, potassium ferricyanide, potassium dichromate, potassium iodate, potassium bromate, vanadium trioxide, hypochlorous acid, sodium hypochlorite, potassium hypochlorite, calcium hypochlorite, magnesium hypochlorite, ferric nitrate, potassium permanganate, and any combinations thereof.

15. A method of polishing a substrate that at least partially comprises cobalt, comprising the step of:
contacting the substrate with the point of use polishing slurry of claim 4 .

16. A method of polishing a substrate that at least partially comprises cobalt, comprising the steps of:
diluting the concentrate of claim 1 by a factor of at least two, to form a point of use polishing slurry; and
contacting the substrate with the point of use polishing slurry.

17. A polishing slurry concentrate for use on cobalt substrates, comprising:
at least one surfactant, wherein the surfactant comprises one or more phosphate groups, a six and twenty-four carbon alkyl chains, and multiple ethylene oxide groups;
at least one azole selected from the group consisting of: a benzotriazole, a benzotriazole derivative, and a combination thereof;
a solvent;
a removal rate enhancer;
an abrasive;
a pH adjustor that is a base; and
a chelating agent selected from the group consisting of ethylenediaminetetracetic acid, iminodiacetic acid, N-hydroxyethyl-ethylenediaminetriacetic acid, nitrilotriacetic acid, diethylenetriaminepentacetic acid, hydroxyethylethylen

Assignees

• Fujifilm Planar Solutions Llc
• Fujifilm Electronic Mat Usa Inc

Inventors

• Liang Yannan
• Wen Liqing
• Hu Bin
• Lee Hyosang
• Chang Shu-Wei
• Lin Sung Tsai

Classifications

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• H01L21/3212

  Electricity · mapped topic

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• C23G1/02

  with acid solutions · CPC title