Silicon anode active material and preparation method therefor

Patent metadata

Field	Value
Publication number	US-10673072-B2
Application number	US-201515553294-A
Country	US
Kind code	B2
Filing date	Feb 24, 2015
Priority date	Feb 24, 2015
Publication date	Jun 2, 2020
Grant date	Jun 2, 2020

Abstract

The present invention relates to a silicon anode active material capable of high capacity and high output, and a method for fabricating the same. A silicon anode active material according to an embodiment of the present invention includes a silicon core including silicon particles; and a double clamping layer having a silicon carbide layer on the silicon core and a silicon oxide layer between the silicon core and the silicon carbide layer.

First claim

The invention claimed is:

1. A silicon anode active material comprising particles, wherein the particles each comprise:
a single silicon core; and
a double clamping layer having a silicon carbide layer on the silicon core and a silicon oxide layer between the silicon core and the silicon carbide layer,
wherein the thickness of the double clamping layer is 0.5 nm to 20 nm.

2. The silicon anode active material of claim 1 , wherein the silicon oxide layer is a silicon source of the silicon carbide layer.

3. The silicon anode active material of claim 1 , wherein the ratio of the thickness of the double clamping layer to the radius of the silicon core is in the range of 0.1% to 10%.

4. The silicon anode active material of claim 1 , further comprising a conductive layer formed on the double clamping layer.

5. The silicon anode active material of claim 4 , wherein the double clamping layer includes through holes, and the conductive layer is continuously coated on the silicon anode active material through the through holes.

6. The silicon anode active material of claim 4 , wherein the conductive layer comprises a carbon-based conductive layer.

7. A method of fabricating a silicon anode active material, the method comprising:
forming a first intermediate particle having a silicon core and a silicon oxide layer on the silicon core;
coating a first solid organic layer on the first intermediate particles to form second intermediate particles;
heat treating the second intermediate particles at a first temperature to convert the first solid organic layer into a carbon layer thereby forming third intermediate particles; and
heat treating the third intermediate particles at a second temperature to form a silicon carbide layer between the silicon oxide layer and the carbon layer to form a double clamping layer comprising the silicon oxide layer and the silicon carbide layer, wherein the thickness of the double clamping layer is 0.5 nm to 20 nm.

8. The method of claim 7 , wherein the silicon oxide layer is a silicon source of the silicon carbide layer.

9. The method of claim 7 , wherein the first temperature is in the range of 700° C. to 1,100° C.

10. The method of claim 7 , wherein the second temperature is in the range of 1,150° C. to 1,300° C.

11. The method of claim 7 , wherein the thickness of the silicon oxide layer of the first intermediate particles is in a range of 50% to 150% of the thickness of the double clamping layer.

12. The method of claim 7 , wherein the thickness of the silicon oxide layer of the third intermediate particle ranges from 1 to 10 times the thickness of the carbon layer.

13. The method of claim 7 , wherein the ratio of the thickness of the double clamping layer to the radius of the silicon core is in the range of 0.1% to 10%.

14. The method of claim 7 , wherein the forming of the second intermediate particles comprises:
preparing a dispersion solution containing a carbon precursor;
dispersing the first intermediate particles in the dispersion solution; and
obtaining and drying the first intermediate particles with the dispersed solution wetted thereon.

15. The method of claim 14 , wherein the carbon precursor may be at least one selected from the group consisting of hydrocarbons based solution, alcohols based solution, ethers based solution, and esters based solution; or a carbon-containing natural polymer material and the carbon-containing synthetic polymer material dissolved in the solution or water, or a mixture thereof.

16. The method of claim 15 , wherein the carbon-containing polymer material comprises chitosan, glucose, sucrose, maltose, lactose, starch, glycogen, polystylene (PS), polyethylene (PE), polypropylene (PP), polyvinyl chloride (PVC), polyacrylonitrile (PAN), polyethylene (PE), polyacrylonitrile Polyacrylic acid (PAA), polyvinylpyrrolidone (PVP), or a mixture thereof.

17. A method of fabricating silicon anode material, the method comprising:
forming a first intermediate particle having a silicon core and a silicon oxide layer on the silicon core;
coating a first solid organic layer on the first intermediate particles to form second intermediate particles; and
heat treating the second intermediate particles to convert the first solid organic layer into a carbon layer and simultaneously forming a silicon carbide layer between the silicon oxide layer and the first solid organic layer to form a double clamping layer comprising the silicon oxide layer and the silicon carbide layer, wherein the thickness of the double clamping layer is 0.5 nm to 20 nm.

18. The method of claim 17 , wherein the silicon oxide layer is a silicon source of the silicon carbide layer.

19. The method of claim 17 , wherein the heat treatment temperature is in a range of 1,150° C. to 1,300° C.

20. The method of claim 17 , wherein the thickness of the silicon oxide layer of the first intermediate particles is within a range of 50% to 150% of the thickness of the double clamping layer.

21. The method of claim 17 , wherein the ratio of the thickness of the double clamping layer to the radius of the silicon core is in the range of 0.1% to 10%.

22. The method of claim 17 , wherein the forming of the second intermediate particles comprises:
preparing a dispersion solution comprising a carbon precursor;
dispersing the first intermediate particles in the dispersion solution; and
obtaining and drying the first intermediate particles with the dispersed solution wetted thereon.

23. The method of claim 22 , wherein the carbon precursor may be at least one selected from the group consisting of hydrocarbons based solution, alcohols based solution, ethers based solution, and esters based solution; or a carbon-containing natural polymer material and the carbon-containing synthetic polymer material dissolved in the solution or water, or a mixture thereof.

24. The method of claim 23 , wherein the carbon-containing polymeric material may be selected from the group consisting of chitosan, glucose, sucrose, maltose, lactose, starch, glycogen, polystyrene (PS), polyethylene (PE), polypropylene (PP), polyvinyl chloride (PVC), polyacrylonitrile (PAN), Polyethylene (PE), polyacrylic acid (PAA), polyvinyl pyrrolidone (PVP), or a mixture thereof.

Assignees

• Nexeon Ltd

Inventors

• Cho Young Tai
• Choi Yong Gil
• Park Seon
• Lee Young Jae
• Seo Hee Young
• Park Jee Hye
• Lee Yong Eui
• Hong Young Jin

Classifications

• H01M4/8885

  Sintering or firing · CPC title

• H01M4/62

  Selection of inactive substances as ingredients for active masses, e.g. binders, fillers · CPC title

• H01M4/622

  being polymers · CPC title

• H01M4/38

  of elements or alloys · CPC title

• H01M4/587 Primary

  for inserting or intercalating light metals · CPC title