Supporting glass substrate, laminate, semiconductor package, electronic device, and method of manufacturing semiconductor package
US-2018226311-A1 · Aug 9, 2018 · US
US10673025B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10673025-B2 |
| Application number | US-201715611187-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 1, 2017 |
| Priority date | Dec 1, 2014 |
| Publication date | Jun 2, 2020 |
| Grant date | Jun 2, 2020 |
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An electrical storage system is provided that has a thickness of less than 2 mm, where the system includes at least one sheet-type discrete element, the sheet-type discrete element exhibiting high resistance to an attack of alkali metals or alkali metal ions, in particular lithium, wherein the sheet-type discrete element has a low content of TiO 2 , the TiO 2 content preferably being less than 2 wt %, preferably less than 0.5 wt %, and preferably free of TiO 2 .
Opening claim text (preview).
What is claimed is: 1. An electrical storage system, comprising: at least one sheet-type discrete element having a thickness of less than 2 mm and being made of toughened glass, wherein the at least one sheet-type discrete element resists an attack of alkali metals or alkali metal ions, wherein the at least one sheet-type discrete element comprises a thickness variation of not more than 25 μm based on wafer or substrate size in a range of >100 mm in diameter, wherein the at least one sheet-type discrete element comprises a composition comprising a TiO 2 in a content of at most 2 wt % and a compositional range selected from the group consisting of, in wt %: Component No. 1 No. 2 No. 3 No. 4 SiO 2 58-65 55-75 75-85 50-65 B 2 O 3 6-10.5 8-18 0-6 Al 2 O 3 14-25 0-15 0.5-4.5 15-20 Li 2 O 0-7 0-6 Na 2 O 0-15 1.5-5.5 8-15 K 2 O 0-14 0-2 0-5 MgO 0-5 0-4 0-5 CaO 0-9 3-12 0-7 BaO 0-8 0-15 SrO 0-8 ZnO 0-2 0-5 0-4 TiO 2 0-2 0-1 ZrO 2 0-4 Total of MgO, 8-18 CaO, SrO, and BaO. 2. The electrical storage system as claimed in claim 1 , further comprising additional constituents in the form of impurities or of necessary processing-related additives and/or refining agents, with a total of the additional constituents amounting to not more than 2 wt %. 3. The electrical storage system as claimed in claim 1 , wherein the compositional range comprises range No. 1 and wherein the BaO content is between 3 wt % and 8 wt %. 4. The electrical storage system as claimed in claim 1 , wherein the sheet-type discrete element has an Li 2 O content of at least 0.1 wt %. 5. The electrical storage system as claimed in claim 1 , wherein the at least one sheet-type discrete element has at least one surface that is inert and/or impermeable to materials coming into contact with the at least one surface. 6. The electrical storage system as claimed in claim 5 , wherein the at least one surface is a barrier layer. 7. The electrical storage system as claimed in claim 6 , wherein the barrier layer is a barrier against a diffusion of metals. 8. The electrical storage system as claimed in claim 6 , wherein the barrier layer is a barrier against a diffusion of alkali metals. 9. The electrical storage system as claimed in claim 8 , wherein the barrier layer is formed by doping or overdoping with at least one alkali metal. 10. The electrical storage system as claimed in claim 5 , wherein the barrier layer is a barrier to lithium. 11. The electrical storage system as claimed in claim 1 , wherein the at least one sheet-type discrete element comprises a water vapor transmission rate (WVTR) of <10 −3 g/(m 2 ·d). 12. The electrical storage system as claimed in claim 1 , wherein the at least one sheet-type discrete element has a thickness of not more than 100 μm. 13. The electrical storage system as claimed in claim 1 , wherein the at least one sheet-type discrete element has a specific electrical resistance at a temperature of 350° C. and at alternating current with a frequency of 50 Hz of greater than 1.0*10 6 Ohm·cm. 14. The electrical storage system as claimed in claim 1 , wherein the at least one sheet-type discrete element comprises a maximum load temperature θ Max of at least 300° C. 15. The electrical storage system as claimed in claim 1 , wherein the at least one sheet-type discrete element has a coefficient of linear thermal expansion α in a range from 2.0*10 −6 /K to 10*10 −6 /K. 16. The electrical storage system as claimed in claim 1 , wherein the at least one sheet-type discrete element further comprises a relationship of a product of a maximum load temperature (θ Max ) and a coefficient of linear thermal expansion (α) of 600·10 −6 ≤θ Max ·α≤8000·10 −6 . 17. The electrical storage system as claimed in claim 1 , wherein the at least one sheet-type discrete element further comprises a relationship of a product of a maximum load temperature (θ Max ) and a coefficient of linear thermal expansion (α) of 800·10 −6 ≤θ Max ·α≤5000·10 −6 . 18. A sheet-type discrete element made of toughened glass, comprising: a composition that resists an attack of alkali metals or alkali metal ions comprising a TiO 2 content of at most 2 wt % and a compositional range selected from the group consisting of, in wt %: Component No. 1 No. 2
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