Biasing circuit for capacitor switch transistor and method therefore

Patent metadata

Field	Value
Publication number	US-10666193-B2
Application number	US-201616322288-A
Country	US
Kind code	B2
Filing date	Aug 23, 2016
Priority date	Aug 23, 2016
Publication date	May 26, 2020
Grant date	May 26, 2020

Abstract

A biasing circuit for biasing a switching transistor, wherein the switching transistor is used for switching a respective capacitor cell into/out of a capacitor array, wherein the capacitor array comprises one or more such capacitor cells, and wherein the capacitor array is coupled in parallel with a primary inductor to form an inductive/capacitive tank. The biasing circuit comprises a secondary inductor which is inductively coupled to the primary inductor, the secondary inductor configured to provide a bias signal for biasing the switching transistor.

First claim

The invention claimed is:

1. A biasing circuit for biasing a switching transistor, wherein the switching transistor is used for switching a respective capacitor cell into/out of a capacitor array, wherein the capacitor array comprises one or more such capacitor cells, and wherein the capacitor array is coupled in parallel with a primary inductor to form an inductive/capacitive tank, the biasing circuit comprising:
a secondary inductor which is inductively coupled to the primary inductor, the secondary inductor configured to provide a bias signal for biasing the switching transistor.

2. The biasing circuit as claimed in claim 1 , wherein the bias signal is derived from a center tap of the secondary inductor.

3. The biasing circuit as claimed in claim 1 , wherein a coupling factor between the primary inductor and the secondary inductor is selected such that the voltage over secondary inductor is substantially the same as the voltage created by the division of the capacitance of the capacitor cell to the off-capacitance of the switching transistor in its disabled state.

4. The biasing circuit as claimed in claim 1 , wherein a capacitor cell comprises a first capacitor and a second capacitor coupled in series, and wherein the drain and source nodes of the switching transistor are coupled between the first capacitor and the second capacitor, to differentially switch the first capacitor and the second capacitor of the capacitor cell into or out of the capacitor array.

5. The biasing circuit as claimed in claim 4 , wherein the biasing signal is coupled to bias the drain node and/or the source node of the switching transistor.

6. The biasing circuit as claimed in claim 5 , further comprising:
a first pair of transistors comprising a second transistor and a third transistor coupled in series between a first end of the secondary inductor and a reference potential, and wherein a connecting node between the second transistor and third transistor is coupled to bias a drain node of the switching transistor; and
a second pair of transistors comprising a fourth transistor and a fifth transistor coupled in series between a second end of the secondary inductor and the reference potential, and wherein a connecting node between the fourth transistor and fifth transistor is coupled to bias a source node of the switching transistor; and wherein
the second transistor and fourth transistor are controlled to couple the drain node and source node of the switching transistor, respectively, to the first end and the second end of the secondary inductor when the switching transistor is disabled.

7. The biasing circuit as claimed in claim 6 , wherein:
the third transistor and fifth transistor are controlled to couple the drain node and source node of the switching transistor, respectively, to a ground potential when the switching transistor is switched on.

8. The biasing circuit as claimed in claim 6 wherein:
the second transistor and fourth transistor are P-channel transistors; and
the third transistor, fifth transistor and switching transistor are N-channel transistors.

9. The biasing circuit as claimed in claim 8 , wherein the gates of the switching transistor, second transistor, third transistor, fourth transistor and fifth transistor are biased by a common enable signal.

10. The biasing circuit as claimed in claim 1 , wherein a capacitor cell comprises a single capacitor, and wherein the switching transistor is coupled to switch the single capacitor of the capacitor cell into or out of the capacitor array from a single side.

11. The biasing circuit as claimed in claim 10 , further comprising:
a first pair of transistors comprising a second transistor and a third transistor coupled in series between a first end of the secondary inductor and a reference potential, wherein a connecting node between the second transistor and third transistor is coupled to bias a drain node of the switching transistor.

12. The biasing circuit as claimed in claim 11 , wherein a second end of the secondary inductor and a source node of the switching transistor are coupled to the reference potential.

13. The biasing circuit as claimed in claim 6 , wherein a first end of the secondary inductor comprises a positive side of the secondary inductor, and wherein a second end of the secondary inductor comprises a negative side of the secondary inductor.

14. The biasing circuit as claimed in claim 1 , wherein the primary inductor comprises a first winding and the secondary inductor comprises a second winding, and wherein the secondary winding is configured inside the primary winding.

15. The biasing circuit as claimed in claim 14 , wherein the first winding comprises a first diameter and the secondary winding comprises a second diameter, and wherein the second diameter is smaller than first diameter.

16. The biasing circuit as claimed in claim 14 , wherein the voltage from the secondary winding is configured to be substantially the same as the voltage over the drain node and source node of the switching transistor when the switching transistor is disabled.

17. The biasing circuit as claimed in claim 1 , wherein the primary inductor and the secondary inductor comprise an autotransformer.

18. The biasing circuit as claimed in claim 1 , wherein the capacitor array and primary inductor forming the inductive/capacitive tank are coupled between a first potential and a reference potential.

19. The biasing circuit as claimed in claim 18 , wherein the first potential is a positive voltage and the reference potential is a ground reference potential.

20. The biasing circuit as claimed in claim 1 , wherein one or more of the switching transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor comprises a metal oxide field effect transistor, MOSFET.

21. A method of biasing a switching transistor used for switching a respective capacitor cell into/out of a capacitor array, wherein the capacitor array comprises one or more such capacitor cells, and wherein the capacitor array is coupled in parallel with a primary inductor to form an inductive/capacitive tank, the method comprising:
inductively coupling a secondary inductor to the primary inductor, and biasing the switching transistor using the secondary inductor.

22. An inductive/capacitive tank comprising:
a primary inductor;
a capacitor array coupled in parallel to the primary inductor, the capacitor array comprising one or more capacitor cells;
a switching transistor for switching a respective capacitor cell into/out of the capacitor array; and
a biasing circuit comprising a secondary inductor which is inductively coupled to the primary inductor, the secondary inductor configured to provide a bias signal for biasing the switching transistor.

Assignees

• Ericsson Telefon Ab L M

Inventors

• Kämpe Andreas

Classifications

• H03B2200/005

  including measures to switch a capacitor · CPC title

• H03B2200/0062

  Bias and operating point · CPC title

• H03B5/1265 Primary

  switched capacitors · CPC title

• H03B5/1296

  the feedback circuit comprising a transformer · CPC title

• H03J5/246

  using electronic means (H03J5/244 takes precedence) · CPC title