Tunable laser and manufacturing method for tunable laser

Patent metadata

Field	Value
Publication number	US-10666014-B2
Application number	US-201816138648-A
Country	US
Kind code	B2
Filing date	Sep 21, 2018
Priority date	Mar 23, 2016
Publication date	May 26, 2020
Grant date	May 26, 2020

Abstract

A wavelength tunable laser includes: a heating layer, a dielectric layer, reflectors, a transport layer, a support layer, and a substrate layer. The heating layer is located above the transport layer; the transport layer is located above the support layer, and the transport layer includes an upper cladding layer, a waveguide layer, and a lower cladding layer from top to bottom; the reflector is located in the transport layer; the support layer has a protection structure, where the protection structure forms a hollow structure together with the transport layer and the substrate layer, and the hollow structure has a support structure; and the substrate layer is located below the support layer. The heating layer, the reflector, and a part of the transport layer form a suspended structure to prevent heat dissipation. Thus thermal tuning efficiency can be improved, and power consumption can be lowered.

First claim

What is claimed is:

1. A wavelength tunable laser, comprising:
a substrate layer;
a support layer disposed above the substrate layer and having a protection structure;
a transport layer disposed above the support layer and comprising a lower cladding layer, a waveguide layer and an upper cladding layer, wherein the protection structure forms a hollow structure together with the transport layer and the substrate layer, and the hollow structure includes a support structure within a hollow area of the hollow structure between the lower cladding layer of the transport layer and the substrate layer, wherein gaps formed between the support structure and the protection structure are configured to insulate heat to increase heat acting on a reflector;
a heating layer disposed above the transport layer; and
the reflector disposed in the transport layer;
wherein:
in a first direction, there are gaps between a part, comprising the reflector, of the transport layer and materials on two sides of the transport layer, to form a suspended structure,
within a length range of the reflector in the first direction, the gaps are configured to isolate the suspended structure from the materials on the two sides of the transport layer, so that the suspended structure is not connected to the materials on the two sides of the transport layer,
the first direction is a transmission direction of light in the waveguide layer, and
the suspended structure has a varying width in the first direction; and

wherein the support structure comprises:
a first support structure disposed below a wider part of the suspended structure;
a second support structure disposed below a narrower part of the suspended structure; and
wherein the first support structure is larger than the second support structure.

2. The laser according to claim 1 , further comprising:
in the first direction, a gap between the support structure and the protection structure.

3. The laser according to claim 1 , further comprising:
in a second direction, a gap between the support structure and the protection structure, wherein the second direction is perpendicular to the transmission direction of light in the waveguide layer.

4. The laser according to claim 1 , wherein the reflector is located at a lower part of the upper cladding layer of the transport layer, at an upper part of the lower cladding layer, in both the upper cladding layer and the waveguide layer, or in both the lower cladding layer and the waveguide layer.

5. The laser according to claim 1 , wherein the transport layer further comprises:
a first barrier layer disposed below the lower cladding layer.

6. The laser according to claim 1 , wherein the substrate layer further comprises:
a substrate material layer; and
a second barrier layer disposed above the substrate material layer.

7. The laser according to claim 1 , wherein the transport layer further comprises:
a dielectric layer disposed above the upper cladding layer.

8. The laser according to claim 1 , wherein the suspended structure has a varying width in the first direction.

9. The laser according to claim 8 , wherein the support structure is disposed below a wider part of the suspended structure, and the support structure is not disposed below a narrower part of the suspended structure.

10. The laser according to claim 8 , wherein a width of the suspended structure in the first direction is greater than or equal to a width of the reflector in the first direction.

11. A wavelength tunable laser, comprising:
a substrate layer;
a support layer disposed above the substrate layer and having a protection structure;
a transport layer disposed above the support layer and comprising a lower cladding layer, a waveguide layer and an upper cladding layer, wherein the protection structure forms a hollow structure together with the transport layer and the substrate layer, and the hollow structure includes a support structure;
a heating layer disposed above the transport layer; and
a reflector disposed in the transport layer;
wherein:
in a first direction, there are gaps between a part, comprising the reflector, of the transport layer and materials on two sides of the transport layer, to form a suspended structure,
within a length range of the reflector in the first direction, the gaps are configured to isolate the suspended structure from the materials on the two sides of the transport layer, so that the suspended structure is not connected to the materials on the two sides of the transport layer,
the first direction is a transmission direction of light in the waveguide layer, and
the suspended structure has a varying width in the first direction; and

wherein the support structure comprises:
a first support structure disposed below a wider part of the suspended structure;
a second support structure disposed below a narrower part of the suspended structure; and
wherein the first support structure is larger than the second support structure.

12. A method of manufacturing a wavelength tunable laser, the method comprising:
forming a substrate layer;
forming a support layer above the substrate layer;
removing a portion of the support layer to form a protection structure;
forming a transport layer above the support layer, the transport layer comprising an lower cladding layer, a waveguide layer and an upper cladding layer, wherein the protection structure forms a hollow structure together with the transport layer and the substrate layer, and the hollow structure comprises a support structure within a hollow area of the hollow structure between the lower cladding layer of the transport layer and the substrate layer, wherein gaps formed between the support structure and the protection structure are configured to insulate heat to increase heat acting on a reflector;
depositing a heating layer above the transport layer; and
forming the reflector in the transport layer;
wherein:
in a first direction, there are gaps formed between a part, comprising the reflector, of the transport layer and materials on two sides of the transport layer, to form a suspended structure,
within a length range of the reflector in the first direction, the formed gaps are configured to isolate the suspended structure from the materials on the two sides of the transport layer, so that the suspended structure is not connected to the materials on the two sides of the transport layer,
the first direction is a transmission direction of light in the waveguide layer, and
the suspended structure has a varying width in the first direction; and

wherein the support structure comprises:
a first support structure formed below a wider part of the suspended structure;
a second support structure formed below a narrower part of the suspended structure; and
wherein the first support structure is larger than the second support structure.

13. The method according to claim 12 , wherein the reflector is formed in the transport layer at a lower part of the upper cladding layer, at an upper part of the lower cladding layer, in both the upper cladding layer and the waveguide layer, or in both the lower cladding layer and the waveguide layer.

14. The method according to claim 12 , wherein forming the transport layer further comprises:
forming a first barrier layer below the lower cladding layer of the transport layer.

15. The method according to claim 14 , wherein before removing the portion of the support layer, the method further comprises:
removing portions of the transport layer in the first direction of the reflector and to expose the first barrier layer; and

Assignees

• Huawei Tech Co Ltd

Inventors

• He Jifang
• Chen Hongmin
• Lei Hongbing
• Shen Xiao Andy

Classifications

• H01S5/2086

  lateral etch control, e.g. mask induced · CPC title

• H01S5/0612 Primary

  controlled by temperature · CPC title

• H01S5/125

  Distributed Bragg reflector [DBR] lasers · CPC title

• H01S5/34326

  with a well layer based on InGa(Al)P, e.g. red laser · CPC title

• H01S5/3438

  based on In(Al)P · CPC title