Semiconductor reflow processing for feature fill

Patent metadata

Field	Value
Publication number	US-10665503-B2
Application number	US-201313801786-A
Country	US
Kind code	B2
Filing date	Mar 13, 2013
Priority date	Apr 26, 2012
Publication date	May 26, 2020
Grant date	May 26, 2020

Abstract

A method for at least partially filling a feature on a workpiece generally includes obtaining a workpiece including a feature depositing a first conformal conductive layer in the feature, and thermally treating the workpiece to reflow the first conformal conductive layer in the feature.

First claim

The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows:

1. A method for filling a feature on a workpiece, the method comprising:
(a) obtaining a workpiece including a feature having a feature diameter of less than 30 nm, wherein the feature includes a conductive seed layer; (b) connecting the workpiece to an electric power supply and driving current to the workpiece; (c) using current, electrochemically depositing a first conformal conductive layer of a sufficient thickness in the feature and over a field surrounding the feature using a deposition electrolyte including metal ions selected from the group consisting of copper, cobalt, nickel, and alloys thereof, a metal ethylenediamine complex, and having a pH in the range of 8 to 11, wherein the first conformal conductive layer includes a metal selected from the group consisting of copper, cobalt, nickel, and alloys thereof, wherein the sufficient thickness of the deposited first conformal conductive layer is sufficient to fill the feature to a height at least level with the field upon reflowing the first conformal conductive layer; (d) completely filling the feature to a height that is at least level with the field upon reflowing the first conformal conductive layer with a first thermal treatment of the first conformal conductive layer; and (e) using current, electrochemically depositing a second conductive layer over the completely filled feature.

2. The method of claim 1 , wherein thermally treating the workpiece reduces voids in the feature fill.

3. The method of claim 1 , wherein the feature includes a barrier layer in the feature when obtained.

4. The method of claim 1 , wherein metal for the conductive seed layer is selected from the group consisting of copper, cobalt, nickel, gold, silver, manganese, tin, aluminum, ruthenium, and alloys thereof.

5. The method of claim 1 , wherein the conductive seed layer is selected from the group consisting of seed, secondary seed, and a stack film of seed and liner.

6. The method of claim 1 , wherein the first conformal conductive layer is deposited using electroplating including at least one copper complex selected from the group consisting of copper ethylenediamine, citrate, tartrate, and urea.

7. The method of claim 1 , wherein the second conductive layer is a cap layer.

8. The method of claim 7 , wherein the cap layer is deposited using electroplating with acid bath.

9. The method of claim 1 , wherein the thermal treatment temperature is in the range of about 100° C. to about 500° C.

10. The method of claim 1 , wherein the thermally treated workpiece has a resistance value reduction in the range of greater than zero to about 40%, as compared to a workpiece formed without the step of thermally treating the workpiece.

11. A method for filling a feature on a workpiece, the method comprising:
(a) obtaining a workpiece including a feature having a feature diameter of less than 30 nm, the feature including a barrier layer and a conductive seed layer;
(b) connecting the workpiece to an electric power supply and driving current to the workpiece;
(c) using current, electrochemically depositing a first conformal conductive layer of a sufficient thickness in the feature and over a field surrounding the feature using a deposition electrolyte including metal ions selected from the group consisting of copper, cobalt, nickel, and alloys thereof, a metal ethylenediamine complex, and having a pH in the range of 8 to 11, wherein the first conformal conductive layer includes a metal selected from the group consisting of copper, cobalt, nickel, and alloys thereof, wherein the sufficient thickness of the deposited first conformal conductive layer is sufficient to fill the feature to a height at least level with the field upon reflowing the first conformal conductive layer;
(d) a single annealing of the workpiece to reflow the first conformal conductive layer in the feature, wherein the reflowed first conformal conductive layer completely fills the feature to a height that is at least level with the field in the single annealing of the workpiece; and
(e) electrochemically depositing a second conductive layer over the completely filled feature.

12. The method of claim 1 , wherein the gas used for thermal treatment has a hydrogen concentration in the range of 3-5% in a carrier gas.

13. The method of claim 12 , wherein the carrier gas is selected from the group consisting of nitrogen, argon, helium, and ammonia.

14. The method of claim 11 , wherein the conductive seed layer includes a metal selected from the group consisting of copper, ruthenium, cobalt, nickel, and alloys thereof.

15. A method for filling a feature on a workpiece, the method substantially consisting of:
(a) obtaining a workpiece including a feature having a feature diameter of less than 30 nm;
(b) connecting the workpiece to an electric power supply and driving current to the workpiece;
(c) using current, electrochemically depositing a first conformal conductive layer of a sufficient thickness in the feature and over a field surrounding the feature using a deposition electrolyte including metal ions selected from the group consisting of copper, cobalt, nickel, and alloys thereof, a metal ethylenediamine complex, and having a pH in the range of 8 to 11, wherein the first conformal conductive layer includes a metal selected from the group consisting of copper, cobalt, nickel, and alloys thereof, wherein the sufficient thickness of the deposited first conformal conductive layer is sufficient to fill the feature to a height at least level with the field upon reflowing the first conformal conductive layer;
(d) thermally treating the workpiece in a first thermal treatment to reflow the first conformal conductive layer in the feature to a height that is at least level with the field, wherein the reflowed first conformal conductive layer completely fills the feature; and
(e) electrochemically depositing a second conductive layer over the completely filled feature.

16. The method of claim 15 , wherein the feature includes a barrier layer.

17. The method of claim 15 , wherein the feature includes a conductive seed layer.

18. The method of claim 17 , wherein the conductive seed layer includes a metal selected from the group consisting of copper, ruthenium, cobalt, nickel, and alloys thereof.

Assignees

• Applied Materials Inc

Inventors

• Emesh Ismail T

Classifications

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• H10W20/0425

  comprising multiple stacked seed or nucleation layers · CPC title

• H01L21/321

  Electricity · mapped topic

• H01L21/76898

  Electricity · mapped topic

• H01L21/76882 Primary

  Electricity · mapped topic