Heat treatment vessel for single-crystal silicon carbide substrate and etching method

Patent metadata

Field	Value
Publication number	US-10665485-B2
Application number	US-201615766191-A
Country	US
Kind code	B2
Filing date	Oct 6, 2016
Priority date	Oct 6, 2015
Publication date	May 26, 2020
Grant date	May 26, 2020

Abstract

A heat treatment container (1) is provided with support members (6) for supporting a disc-shaped SiC substrate (2), which is an object, at a time of an etching treatment of the SiC substrate (2). Each of the support members (6) has an inclined surface (6F) for supporting a lower surface end (2E) of the SiC substrate (2), the inclined surface being inclined so as to increasingly approach the centerline of the SiC substrate (2) going downward. More specifically, each of the support members (6) is formed in a conical shape with a diameter that increases going downward, and a conical surface which is the peripheral surface of each supporting member forms the inclined surface (6F). A vertically-middle section of the inclined surface (6F) contacts the lower surface end (2E) of the SiC substrate (2).

First claim

The invention claimed is:

1. A heat treatment container, comprising:
supporting members for supporting a disc-shaped SiC substrate as an object during an etching treatment of the SiC substrate, and
wherein each of the supporting members includes an inclined section for supporting a boundary point between a side surface and a lower surface end of the SiC substrate,
wherein the inclined section inclines so as to be closer to a centerline of the SiC substrate as the inclined section approaches a bottom plate,
wherein each of the supporting members is mounted on the bottom plate via a mounting mechanism having a clearance, and
wherein each of the supporting members is configured such that inclination of the inclined section can be changed by the clearance.

2. The heat treatment container according to claim 1 ,
wherein the inclined section has a planar surface, a cylindrical surface, a conical surface, or a ridgeline, and
wherein a vertically-middle section of the inclined section comes in contact with the lower surface end of the SiC substrate.

3. An etching method, wherein
the etching treatment using the heat treatment container according to claim 1 is performed to the SiC substrate in which an end of a surface to be treated is supported by the supporting members in a state where the surface to be treated of the SiC substrate faces downward.

4. The heat treatment container according to claim 1 , further comprising:
a bottom plate that forms a bottom of the heat treatment container,
wherein each of the supporting members is removably provided on the bottom plate.

5. The heat treatment container according to claim 4 ,
wherein each of the supporting members is made of tantalum carbide or niobium carbide, and
wherein an inner bottom surface of the bottom plate and a surface that is exposed to an internal space of the heat treatment container are made of tantalum silicide.

6. The heat treatment container according to claim 4 ,
wherein either one of a shaft-like insertion part or an insertion hole is provided at a lower end of each of the supporting members, and
wherein the bottom plate has an insertion hole or a shaft-like insertion part corresponding to either one of the shaft-like insertion hole or the insertion hole that is provided at the lower end of each of the supporting members.

7. The heat treatment container according to claim 6 ,
wherein an external thread is provided in the shaft-like insertion part, and
wherein an internal thread is provided in the insertion hole.

8. A heat treatment container, comprising:
supporting members capable of supporting a disc-shaped SiC substrate as an object during an etching treatment of the SiC substrate, and
a bottom plate that forms a bottom of the heat treatment container,
wherein each of the supporting members includes an inclined section capable of supporting a lower surface end of the SiC substrate, and
wherein the inclined section inclines so as to be closer to a centerline of the SiC substrate as the inclined section approaches the bottom plate, and
wherein each of the supporting members is mounted on the bottom plate via a mounting mechanism having play, such that the supporting members are tiltable relative to the bottom plate.

9. The heat treatment container according to claim 8 ,
wherein the inclined section has a planar surface, a cylindrical surface, a conical surface, or a ridgeline, and
wherein the heat treatment container is configured such that a vertically-middle section of the inclined section can come in contact with the lower surface end of the SiC substrate.

10. The heat treatment container according to claim 8 , wherein each of the supporting members is removably provided on the bottom plate.

11. The heat treatment container according to claim 8 ,
wherein each of the supporting members is made of tantalum carbide or niobium carbide, and
wherein an inner bottom surface of the bottom plate and a surface that is exposed to an internal space of the heat treatment container are made of tantalum silicide.

12. The heat treatment container according to claim 8 ,
wherein the mounting mechanism comprises
(i) a shaft-like insertion part provided at a lower end of a least one of the supporting members and a corresponding insertion hole provided in the bottom plate, or
(ii) an insertion hole provided at a lower end of at least one of the supporting members and a corresponding shaft-like insertion part provided on the bottom plate.

13. The heat treatment container according to claim 12 ,
wherein an external thread is provided in the shaft-like insertion part, and
wherein an internal thread is provided in the insertion hole.

14. The heat treatment container according to claim 8 , wherein
each of the supporting members is configured such that inclination of the inclined section can be changed by the play.

15. An etching method, comprising:
etching a disc-shaped SiC substrate in a heat treatment container, the heat treatment container comprising supporting members capable of supporting the SiC substrate, the supporting members having an inclined section that inclines so as to be closer to a centerline of the SiC substrate as the inclined portion approaches a bottom thereof, and
wherein, during etching, an end of a surface of the SiC substrate to be treated is supported by the inclined section of supporting members in a state where the surface to be treated of the SiC substrate faces downward,
wherein each of the supporting members is mounted on the bottom plate via a mounting mechanism having a clearance, and
wherein each of the supporting members is configured such that inclination of the inclined section can be changed by the clearance.

Assignees

• Toyo Tanso Co

Inventors

• Torimi Satoshi
• Shinohara Masato
• Yabuki Norihito
• Nogami Satoru

Classifications

• H10P72/7614 Primary

  characterised by a plurality of individual support members, e.g. support posts or protrusions · CPC title

• H10P72/70

  for supporting or gripping · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• H10P72/0436 Primary

  mainly by radiation · CPC title