Photoelectric sensor, array substrate, display panel and display device

Patent metadata

Field	Value
Publication number	US-10657353-B2
Application number	US-201816027916-A
Country	US
Kind code	B2
Filing date	Jul 5, 2018
Priority date	Sep 19, 2017
Publication date	May 19, 2020
Grant date	May 19, 2020

Abstract

The present disclosure provides a photoelectric sensor, an array substrate, a display panel and a display device. The photoelectric sensor is used for fingerprint recognition, and includes a first electrode layer, being lighttight. The photoelectric sensor further includes a first transparent electrode layer, disposed opposite to the first electrode layer and receiving incident light, and a light sensing layer, located between the first electrode layer and the first transparent electrode layer. The light sensing layer includes a plurality of nanocrystalline silicon particles with different particle sizes.

First claim

What is claimed is:

1. A photoelectric sensor for fingerprint recognition, comprising:
a first transparent electrode layer, configured to receive incident light;
a first electrode layer, being lighttight and disposed opposite to the first transparent electrode layer; and
a light sensing layer, located between the first electrode layer and the first transparent electrode layer, wherein the light sensing layer comprises a plurality of nanocrystalline silicon particles with different particle sizes,
wherein the light sensing layer comprises:
a plurality of nanocrystalline silicon layers, each comprising nanocrystalline silicon panicles with a same particle size,
wherein the nanocrystalline silicon particles comprised in one of the plurality of nanocrystalline silicon layers have a particle size different from that of the nanocrystalline silicon particles comprised in another of the plurality of nanocrystalline silicon layers.

2. The photoelectric sensor according to claim 1 , wherein the plurality of nanocrystalline silicon layers are stacked, and the particle sizes of the nanocrystalline silicon particles of the plurality of nanocrystalline silicon layers increase gradually along a direction from the first transparent electrode layer to the first electrode layer.

3. The photoelectric sensor according to claim 1 , wherein a connecting layer is disposed between two adjacent nanocrystalline silicon layers of the plurality of nanocrystalline silicon layers, configured to connect the two adjacent nanocrystalline silicon layers.

4. The photoelectric sensor according to claim 1 , wherein a second transparent electrode layer, a third transparent electrode layer and an insulating layer are disposed between two adjacent nanocrystalline silicon layers of the plurality of nanocrystalline silicon layers, and
the third transparent electrode layer is disposed opposite to the second transparent electrode layer and the insulating layer is located between the second transparent electrode layer and the third transparent electrode layer.

5. The photoelectric sensor according to claim 1 , wherein the first transparent electrode layer comprises one of metal and metal oxide.

6. The photoelectric sensor according to claim 4 , wherein the second transparent electrode layer and the third transparent electrode layer comprise one of metal and metal oxide.

7. An array substrate, comprising:
a substrate;
a thin film transistor, formed on the substrate; and
a photoelectric sensor for fingerprint recognition, formed on the substrate and electrically coupled to the thin film transistor,
wherein the photoelectric sensor comprises:
a first transparent electrode layer, configured to receive incident light;
a first electrode layer, being lighttight and disposed opposite to the first transparent electrode layer; and
a light sensing layer, located between the first electrode layer and the first transparent electrode layer, wherein the light sensing layer comprises a plurality of nanocrystalline silicon particles with different particle sizes,

wherein the light sensing layer comprises:
a plurality of nanocrystal line silicon layers, each comprising nanocrystalline silicon particles with a same particle size,
wherein the nanocrystalline silicon particles comprised in one of the plurality of nanocrystalline silicon layers have a particle size different from that of the nanocrystalline silicon particles comprised in another of the plurality of nanocrystalline silicon layers.

8. The array substrate according to claim 7 , wherein the plurality of nanocrystalline silicon layers are stacked, and the particle sizes of the nanocrystalline silicon particles comprised in the plurality of nanocrystalline silicon layers increase gradually along a direction from the first transparent electrode layer to the first electrode layer.

9. The array substrate according to claim 7 , wherein a connecting layer is disposed between two adjacent nanocrystalline silicon layers of the plurality of nanocrystalline silicon layers, configured to connect the two adjacent nanocrystalline silicon layers.

10. The array substrate according to claim 7 , wherein a second transparent electrode layer, a third transparent electrode layer and an insulating layer are disposed between two adjacent nanocrystalline silicon layers of the plurality of nanocrystalline silicon layers, and
the third transparent electrode layer is disposed opposite to the second transparent electrode layer and the insulating layer is located between the second transparent electrode layer and the third transparent electrode layer.

11. The array substrate according to claim 7 , wherein the first transparent electrode layer comprises one of metal and metal oxide.

12. The array substrate according to claim 10 , wherein the second transparent electrode layer and the third transparent electrode layer comprise one of metal and metal oxide.

13. A display panel, comprising an array substrate, wherein the array substrate comprises:
a substrate;
a thin film transistor, formed on the substrate; and
a photoelectric sensor for fingerprint recognition, formed on the substrate and electrically coupled to the thin film transistor,
wherein the photoelectric sensor comprises:
a first transparent electrode layer, configured to receive incident light;
a first electrode layer, being lighttight and disposed opposite to the first transparent electrode layer; and
a light sensing layer, located between the first electrode layer and the first transparent electrode layer and comprising a plurality of nanocrystalline silicon particles with different particle sizes,
wherein the light sensing layer comprises:
a plurality of nanocrystalline silicon layers, each comprising nanocrystalline silicon particles with a same particle size,
wherein the nanocrystalline silicon particles comprised in one of the plurality of nanocrystalline silicon layers have a particle size different from that of the nanocrystalline silicon particles comprised in another of the plurality of nanocrystalline silicon layers.

14. A display device, comprising a display panel, wherein the display panel comprises an array substrate, the array substrate comprises:
a substrate;
a thin film transistor, formed on the substrate; and
a photoelectric sensor for fingerprint recognition, formed on the substrate and electrically coupled to the thin film transistor,
wherein the photoelectric sensor comprises:
a first transparent electrode layer, configured to receive incident light;
a first electrode layer, being lighttight and disposed opposite to the first transparent electrode layer; and
a light sensing layer, located between the first electrode layer and the first transparent electrode layer and comprising a plurality of nanocrystalline silicon particles with different particle sizes,
wherein the light sensing layer comprises:
a plurality of nanocrystalline silicon layers, each comprising nanocrystalline silicon particles with a same particle size,
wherein the nanocrystalline silicon particles comprised in one of the plurality of nanocrystalline silicon layers have a particle size different from that of the nanocrystalline silicon particles comprised in another of the plurality of nanocrystalline silicon layers.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Jia Yanan
• Dong Xue
• Lv Jing
• Wang Haisheng
• Wu chun wei
• Liu Yingming
• Xu Rui
• Li Changfeng
• Zhao Lijun
• Gu Pinchao
• Qin Yunke
• Han Yanling
• Guo Yuzhen
• Wei Congcong

Classifications

• G02F1/13318

  Circuits comprising a photodetector · CPC title

• G02F2201/58

  Arrangements comprising a monitoring photodetector · CPC title

• H01L31/1013

  Electricity · mapped topic

• H01L31/02325

  Electricity · mapped topic

• H01L31/03762

  Electricity · mapped topic