Light emitting apparatus, manufacturing method of light emitting apparatus, light receiving and emitting apparatus, and electronic equipment

Patent metadata

Field	Value
Publication number	US-9412909-B2
Application number	US-201514859490-A
Country	US
Kind code	B2
Filing date	Sep 21, 2015
Priority date	Jul 17, 2013
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

A manufacturing method is a method for manufacturing a light emitting apparatus including a translucent substrate, and a light emitting section and an optical filer section that are arranged in a first region of the substrate when viewed in a normal direction of a first surface of the substrate. The manufacturing method includes: forming a dielectric multilayer film over the first region of the substrate; forming a first electrode on the dielectric multilayer film included in the light emitting section; forming a functional layer with a light emitting layer over the first electrode and the dielectric multilayer film included in the optical filter section; and forming a second electrode having semi-transmissive reflectivity on the functional layer over the first region of the substrate.

First claim

What is claimed is:

1. A manufacturing method of a light emitting apparatus including a translucent substrate, and a light emitting section and an optical filter section that are arranged in a first region of the substrate when viewed in a normal direction of a first surface of the substrate, the manufacturing method comprising:
forming a dielectric multilayer film over the first region of the substrate;
forming a first electrode on the dielectric multilayer film included in the light emitting section;
forming a functional layer with a light emitting layer over the first electrode and the dielectric multilayer film included in the optical filter section; and
forming a second electrode having semi-transmissive reflectivity on the functional layer over the first region of the substrate.

2. The manufacturing method according to claim 1 , further comprising
forming a reflection layer between the first surface of the substrate and the dielectric multilayer film included in the light emitting section,
a first optical resonance structure being formed between the reflection layer and the second electrode included in the light emitting section, and
a second optical resonance structure being formed between the dielectric multilayer film and the second electrode included in the optical filter section.

3. The manufacturing method according to claim 1 , further comprising
forming a transparent layer having the same thickness of the first electrode in the same layer level with the first electrode over the dielectric multilayer film included in the optical filter section.

4. The manufacturing method according to claim 1 , further comprising
forming a transparent layer made of the same conducting film as the first electrode in the same layer level with the first electrode over the dielectric multilayer film included in the optical filter section, with the first electrode having a film thickness that is different from that of the transparent layer.

5. The manufacturing method according to claim 1 , wherein
the forming of the functional layer includes the forming the light emitting layer such that a distance d 1 from a center of the light emitting section to an outer edge of the light emitting section measured in a direction directing toward a center of the optical filter section from the center of the light emitting section satisfies a relationship of 5 μm≦d 1 ≦0.7 mm.

6. The manufacturing method according to claim 1 , wherein
the forming of the dielectric multilayer film includes forming the dielectric multilayer film to have a laminate structure that includes a first dielectric film having a first refractive index and a second dielectric film having a second refractive index that is larger than the first refractive index, and
the second dielectric film is made of amorphous silicon.

7. The manufacturing method according to claim 1 , wherein
the second electrode includes a layer made of alloy that includes Ag.

8. The manufacturing method according to claim 1 , wherein
the first electrode extends along a first direction,
the second electrode extends along a second direction that intersects with the first electrode,
the light emitting section includes a part of the first electrode that extends along the first direction, and
the optical filter section includes a part of the second electrode that does not overlap with the part of the first electrode.

Assignees

• Seiko Epson Corp

Inventors

• Fujita Tetsuji
• Yamamoto Hidetoshi
• Ishiguro Hideto
• Eguchi Tsukasa

Classifications

• H10H20/833

  Transparent materials · CPC title

• H10H20/01

  Manufacture or treatment · CPC title

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

• H10F55/20

  wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers · CPC title

• H10H20/835 Primary

  Reflective materials · CPC title