Thin film transistor array substrate, method for manufacturing the same, and display device

Patent metadata

Field	Value
Publication number	US-10651212-B2
Application number	US-201916388349-A
Country	US
Kind code	B2
Filing date	Apr 18, 2019
Priority date	Nov 13, 2014
Publication date	May 12, 2020
Grant date	May 12, 2020

Abstract

A thin film transistor array substrate, a method for manufacturing the same and a display device are provided. The TFT array substrate includes: a substrate, and a gate electrode, a common electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode arranged on the substrate. The TFT array substrate further includes: a pixel electrode, arranged on the gate insulation layer, overlapped with and jointed to the drain electrode; a passivation layer, arranged on the gate insulation layer and a channel between the source and drain electrodes; and a common electrode line, arranged on a plane identical to the pixel electrode.

First claim

What is claimed is:

1. A thin film transistor (TFT) array substrate, comprising: a substrate, and a gate electrode, a common electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode arranged on the substrate, wherein the TFT array substrate further comprises:
a pixel electrode, arranged on the gate insulation layer, overlapped with and jointed to the drain electrode;
a passivation layer, arranged on the gate insulation layer and a channel between the source and drain electrodes; and
a common electrode line, arranged in a layer different from the common electrode and arranged on a plane identical to the pixel electrode.

2. The TFT array substrate according to claim 1 , wherein
the common electrode line is made of a same material as the pixel electrode.

3. The TFT array substrate according to claim 2 , further comprising:
a transparent conductive thin film protective portion, arranged between the gate electrode and the substrate, wherein the transparent conductive thin film protective portion is arranged at a same layer and made of a same material as the common electrode;
a common electrode line connection portion, arranged on the common electrode and comprising a first transparent conductive layer and a gate metal layer, wherein the common electrode is connected to the common electrode line via the common electrode line connection portion.

4. The TFT array substrate according to claim 3 , further comprising:
a gate electrode protective layer, arranged between the gate electrode and the gate insulation layer;
wherein the common electrode line connection portion further comprises a second transparent conductive layer arranged at a same layer and made of a same material as the gate electrode protective layer.

5. The TFT array substrate according to claim 2 , further comprising:
a source electrode protective portion covering the source electrode and arranged at a same layer and made of a same material as the pixel electrodes.

6. A display device, comprising:
a thin film transistor (TFT) array substrate;
wherein the thin film transistor array substrate comprises: a substrate, and a gate electrode, a common electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode arranged on the substrate, wherein the TFT array substrate further comprises:
a pixel electrode, arranged on the gate insulation layer, overlapped with and jointed to the drain electrode;
a passivation layer, arranged on the gate insulation layer and a channel between the source and drain electrodes; and
a common electrode line, arranged in a layer different from the common electrode and arranged on a plane identical to the pixel electrode.

7. The display device according to claim 6 , wherein the common electrode line is made of a same material as the pixel electrode.

8. The display device according to claim 7 , wherein the TFT array substrate further comprises:
a transparent conductive thin film protective portion, arranged between the gate electrode and the substrate, wherein the transparent conductive thin film protective portion is arranged at a same layer and made of a same material as the common electrode;
a common electrode line connection portion, arranged on the common electrode and comprising a first transparent conductive layer and a gate metal layer, wherein the common electrode is connected to the common electrode line via the common electrode line connection portion.

9. The display device according to claim 8 , wherein the TFT array substrate further comprises:
a gate electrode protective layer, arranged between the gate electrode and the gate insulation layer;
wherein the common electrode line connection portion further comprises a second transparent conductive layer arranged at a same layer and made of a same material as the gate electrode protective layer.

10. The display device according to claim 7 , wherein the TFT array substrate further comprises:
a source electrode protective portion covering the source electrode and arranged at a same layer and made of a same material as the pixel electrodes.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Hu hehe

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P50/264

  by chemical means · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H01L27/02

  Electricity · mapped topic

• H01L27/1288 Primary

  Electricity · mapped topic