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US-2024414942-A1 · Dec 12, 2024 · US
US9196742B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9196742-B2 |
| Application number | US-201113813839-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 28, 2011 |
| Priority date | Aug 4, 2010 |
| Publication date | Nov 24, 2015 |
| Grant date | Nov 24, 2015 |
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A TFT substrate ( 20 a ) includes a plurality of pixel electrodes ( 17 a ) provided in a matrix, a plurality of TFTs ( 5 ) each provided for a corresponding one of the pixel electrodes ( 17 a ), and a plurality of auxiliary capacitors ( 6 a ) each provided for a corresponding one of the pixel electrodes ( 17 a ). Each of the auxiliary capacitors ( 6 a ) includes a capacitor line ( 11 b ) made of a material identical to that of the gate electrode ( 11 aa ) of the TFT ( 5 ) and provided in a layer identical to that of the gate electrode ( 11 aa ) of the TFT ( 5 ), the gate insulating film ( 12 ) provided so as to cover the capacitor line ( 11 b ), and a corresponding one of the pixel electrodes ( 17 a ) provided on the gate insulating film ( 12 ) so as to overlap with the capacitor line ( 11 b ) and being in conduction with a drain electrode ( 14 ca ).
Opening claim text (preview).
The invention claimed is: 1. A thin film transistor substrate, comprising: a plurality of pixel electrodes provided in a matrix; a plurality of thin film transistors each provided for a corresponding one of the pixel electrodes and connected to the corresponding one of the pixel electrodes; and a plurality of auxiliary capacitors each provided for a corresponding one of the pixel electrodes, wherein each of the thin film transistors includes: a gate electrode provided on a…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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