Magnetic material sputtering target and method for producing same

Patent metadata

Field	Value
Publication number	US-10644230-B2
Application number	US-201615543070-A
Country	US
Kind code	B2
Filing date	Feb 24, 2016
Priority date	Mar 4, 2015
Publication date	May 5, 2020
Grant date	May 5, 2020

Abstract

A magnetic material sputtering target formed from a sintered body containing at least Co and/or Fe and B, and containing B in an amount of 10 to 50 at %, wherein an oxygen content is 100 wtppm or less. Since the magnetic material sputtering target of the present invention can suppress the generation of particles caused by oxides, the present invention yields superior effects of being able to improve the yield upon producing magnetoresistive films and the like.

First claim

The invention claimed is:

1. A magnetic material sputtering target formed from a sintered body containing Co and B, Fe and B, or Co, Fe and B, such that the sintered body contains 10 to 50 at % of B, and wherein a total content of Al and Si is of 100 wtppm or less, and an oxygen content is of 100 wtppm or less.

2. A magnetic material sputtering target formed from a sintered body containing Co and B, Fe and B, or Co, Fe and B, such that the sintered body contains 10 to 50 at % of B, wherein a total content of Al, Ba, Hf, Li, Mg, Si, Sr, Ti and Zr is 100 wtppm or less, and an oxygen content is 100 wtppm or less.

3. The magnetic material sputtering target according to claim 1 , wherein a total content of Al, Ba, Hf, Li, Mg, Si, Sr, Ti and Zr is 100 wtppm or less.

4. A method of producing a magnetic material sputtering target, wherein a Co raw material and a B raw material, an Fe raw material and a B raw material, or Co, Fe and B raw materials are subject to melting and casting to prepare an alloy ingot, the alloy ingot is thereafter subject to gas atomization to prepare a raw material powder, and the raw material powder is thereafter sintered to obtain a target formed from a sintered body, and wherein the sintered body contains Co and B, Fe and B, or Co, Fe and B, such that the sintered body contains 10 to 50 at % of B, wherein a total content of Al and Si is 100 wtppm or less, and an oxygen content is 100 wtppm or less.

5. The method of producing a magnetic material sputtering target according to claim 4 , wherein a final solidified part of the alloy ingot obtained via melting and casting is cut, and a remainder of the ingot is subject to gas atomization to prepare the raw material powder.

6. The method of producing a magnetic material sputtering target according to claim 5 , wherein a grain size of the raw material powder is 53 to 300 μm.

7. The method of producing a magnetic material sputtering target according to claim 4 , wherein a grain size of the raw material powder is 53 to 300 μm.

8. A method of producing a magnetic material sputtering target, wherein a Co raw material and a B raw material, an Fe raw material and a B raw material, or Co, Fe and B raw materials are subject to melting and casting to prepare an alloy ingot, the alloy ingot is thereafter subject to gas atomization to prepare a raw material powder, and the raw material powder is thereafter sintered to obtain a target formed from a sintered body, and wherein the sintered body contains Co and B, Fe and B, or Co, Fe and B, such that the sintered body contains 10 to 50 at % of B, wherein a total content of Al, Ba, Hf, Li, Mg, Si, Sr, Ti and Zr is 100 wtppm or less, and an oxygen content is 100 wtppm or less.

9. The method of producing a magnetic material sputtering target according to claim 8 , wherein a final solidified part of the alloy ingot obtained via melting and casting is cut, and a remainder of the ingot is subject to gas atomization to prepare the raw material powder.

10. The method of producing a magnetic material sputtering target according to claim 9 , wherein a grain size of the raw material powder is 53 to 300 μm.

11. The method of producing a magnetic material sputtering target according to claim 8 , wherein a grain size of the raw material powder is 53 to 300 μm.

12. The method of producing a magnetic material sputtering target according to claim 8 , wherein the sintered body consists essentially of Co and B, Fe and B, or Co, Fe and B.

13. The method of producing a magnetic material sputtering target according to claim 12 , wherein the sintered body contains 30 to 40 at % of B.

14. The method of producing a magnetic material sputtering target according to claim 4 , wherein the sintered body consists essentially of Co and B, Fe and B, or Co, Fe and B.

15. The method of producing a magnetic material sputtering target according to claim 14 , wherein the sintered body contains 30 to 40 at % of B.

16. The magnetic material sputtering target according to claim 2 , wherein the sintered body consists essentially of Co and B, Fe and B, or Co, Fe and B.

17. The magnetic material sputtering target according to claim 16 , wherein the sintered body contains 30 to 40 at % of B.

18. The magnetic material sputtering target according to claim 1 , wherein the sintered body consists essentially of Co and B, Fe and B, or Co, Fe and B.

19. The magnetic material sputtering target according to claim 18 , wherein the sintered body contains 30 to 40 at % of B.

Assignees

• Jx Nippon Mining & Metals Corp

Inventors

• Arakawa Atsutoshi

Classifications

• C23C14/3407 Primary

  Cathode assembly for sputtering apparatus, e.g. Target · CPC title

• H01F1/22

  pressed, sintered, or bound together · CPC title

• B22F3/14

  simultaneously · CPC title

• C23C14/3414

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

• B22F9/082

  atomising using a fluid (using centrifugal force B22F9/10) · CPC title