Power semiconductor device that includes a copper layer disposed on an electrode and located away from a polyimide layer and method for manufacturing the power semiconductor device

Patent metadata

Field	Value
Publication number	US-10643967-B2
Application number	US-201716092564-A
Country	US
Kind code	B2
Filing date	Apr 25, 2017
Priority date	May 18, 2016
Publication date	May 5, 2020
Grant date	May 5, 2020

Abstract

An electrode is disposed on a semiconductor layer. A polyimide layer has an opening disposed on the electrode, covers the edge of the electrode, and extends onto the electrode. A copper layer is disposed on the electrode within the opening, and located away from the polyimide layer on the electrode. A copper wire has one end joined on the copper layer.

First claim

The invention claimed is:

1. A power semiconductor device comprising:
a semiconductor layer;
an electrode disposed on the semiconductor layer;
a polyimide layer comprising an opening disposed on the electrode, the polyimide layer covering an edge of the electrode and extending onto the electrode;
a copper layer disposed on the electrode within the opening, and located away from the polyimide layer on the electrode; and
a copper wire comprising one end joined on the copper layer,
wherein the copper layer has a larger area than a region in which the copper wire is joined to the copper layer, and
a distance between the copper layer and the polyimide layer is greater than half a thickness of the copper layer.

2. The power semiconductor device according to claim 1 , further comprising a silicon nitride layer separating the polyimide layer from the copper layer.

3. The power semiconductor device according to claim 1 , wherein the copper wire has a diameter of 100 μm or more.

4. The power semiconductor device according to claim 1 , further comprising a sealant sealing a gap between the polyimide layer and the copper layer,
wherein the sealant is made of any of a silicone-based material, an epoxy-based material, and a phenol-based material.

5. The power semiconductor device according to claim 1 , wherein at least part of the semiconductor layer is made of silicon carbide.

6. A method for manufacturing a power semiconductor device, the method comprising:
forming an electrode on a semiconductor layer;
forming a polyimide layer comprising an opening disposed on the electrode, the polyimide layer covering an edge of the electrode and extending onto the electrode;
forming, on the electrode within the opening, a copper layer located away from the polyimide layer on the electrode; and
joining one end of a copper wire having a diameter of 100 μm or more onto the copper layer,
wherein the joining of the one end of the copper wire is performed to the copper layer located away from the polyimide layer by a distance greater than half a thickness of the copper layer.

7. A power semiconductor device comprising:
a semiconductor layer;
an electrode disposed on the semiconductor layer;
a polyimide layer comprising an opening disposed on the electrode, the polyimide layer covering an edge of the electrode and extending onto the electrode;
a copper layer disposed on the electrode within the opening, and located away from the polyimide layer on the electrode;
a copper wire comprising one end joined on the copper layer and having a diameter larger than a thickness of the copper layer; and
a silicon nitride layer partly disposed on the electrode,
wherein the copper layer comprises an edge directly contacting the silicon nitride layer.

8. The power semiconductor device according to claim 7 , wherein the silicon nitride layer separates the polyimide layer from the copper layer.

9. The power semiconductor device according to claim 7 , wherein the copper wire has the diameter of 100 μm or more.

10. The power semiconductor device according to claim 7 , further comprising a sealant sealing a gap between the polyimide layer and the copper layer,
wherein the sealant is made of any of a silicone-based material, an epoxy-based material, and a phenol-based material.

11. The power semiconductor device according to claim 7 , wherein at least part of the semiconductor layer is made of silicon carbide.

Assignees

• Mitsubishi Electric Corp

Inventors

• Okabe Hiroaki
• Nakanishi Yosuke

Classifications

• H01L21/3205

  Electricity · mapped topic

• H01L2224/05124

  Electricity · mapped topic

• H01L23/522

  Electricity · mapped topic

• H01L2224/48847

  Electricity · mapped topic

• H01L2924/00014

  Electricity · mapped topic