Selective growth of metal-containing hardmask thin films

Patent metadata

Field	Value
Publication number	US-10643846-B2
Application number	US-201816022503-A
Country	US
Kind code	B2
Filing date	Jun 28, 2018
Priority date	Jun 28, 2018
Publication date	May 5, 2020
Grant date	May 5, 2020

Abstract

Methods and apparatuses for selectively growing metal-containing hard masks are provided herein. Methods include providing a substrate having a pattern of spaced apart features, each feature having a top horizontal surface, filling spaces between the spaced apart features with carbon-containing material to form a planar surface having the top horizontal surfaces of the features and carbon-containing material, selectively depositing a metal-containing hard mask on the top horizontal surfaces of the features relative to the carbon-containing material, and selectively removing the carbon-containing material relative to the metal-containing hard mask and features.

First claim

What is claimed is:

1. A method comprising:
providing a patterned semiconductor substrate having features spaced apart on an underlying material to be etched;
filling spaces between the features with an ashable fill such that top horizontal surfaces of the features are exposed and sidewalls of the features contact the ashable fill;
after filling the spaces between the features, selectively depositing a metal-containing hard mask on the exposed top horizontal surfaces of the features relative to the ashable fill; and
removing the ashable fill relative to the features and metal-containing hard mask.

2. The method of claim 1 , wherein the filling between the features is performed to form a planar surface comprising the top horizontal surfaces of the features and the ashable fill.

3. The method of claim 1 , wherein the filling between the features is done by spin-on.

4. The method of claim 3 , wherein the spin-on is performed by injecting a carbon-containing fluid mixture onto the patterned semiconductor substrate followed by heat curing.

5. The method of claim 3 , wherein the filling between the features is done by spin-on followed by planarization to expose the top horizontal surfaces of the features.

6. The method of claim 1 , wherein the filling between the features is done by plasma enhanced chemical vapor deposition.

7. The method of claim 6 , wherein the filling between the features further comprises planarizing the patterned semiconductor substrate after the plasma enhanced chemical vapor deposition.

8. The method of claim 6 , wherein the filling by plasma enhanced chemical vapor deposition comprises exposing the features to a hydrocarbon precursor having a formula C x H y , wherein X is an integer between and including 2 and 10, and Y is an integer between and including 2 and 24.

9. The method of claim 1 , wherein the selectively depositing of the metal-containing hard mask is performed at a substrate temperature between about 200° C. and about 400° C.

10. The method of claim 1 , wherein the selectively depositing of the metal-containing hard mask is performed by one or more cycles of atomic layer deposition.

11. The method of claim 10 , wherein one cycle of atomic layer deposition comprises exposure to a silicon-containing precursor and exposure to a tungsten-containing precursor.

12. The method of claim 11 , wherein the silicon-containing precursor is silane.

13. The method of claim 11 , wherein the tungsten-containing precursor is a tungsten halide.

14. The method of claim 13 , wherein the tungsten-containing precursor is selected from the group consisting of tungsten hexafluoride, tungsten pentachloride, tungsten hexachloride, and combinations thereof.

15. The method of claim 1 , wherein the features comprise a dielectric material.

16. The method of claim 1 , wherein the features comprise silicon.

17. The method of claim 1 , wherein the metal-containing hard mask comprises tungsten.

18. The method of claim 17 , wherein the metal-containing hard mask is selected from the group consisting of tungsten, tungsten carbide, tungsten carbonitride, and combinations thereof.

19. The method of claim 1 , wherein spaces between features have an aspect ratio of at least about 4:1.

Assignees

• Lam Res Corp

Inventors

• Smith David Charles
• Henri Jon
• Hausmann Dennis M
• Lemaire Paul C

Classifications

• H01J37/32715

  Workpiece holder · CPC title

• C23C16/042

  using masks · CPC title

• C23C16/32

  Carbides · CPC title

• H01J37/32449 Primary

  Gas control, e.g. control of the gas flow · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title