Resist base material, resist composition and method for forming resist pattern

Patent metadata

Field	Value
Publication number	US-10642156-B2
Application number	US-201615562841-A
Country	US
Kind code	B2
Filing date	Mar 17, 2016
Priority date	Mar 30, 2015
Publication date	May 5, 2020
Grant date	May 5, 2020

Abstract

The present invention provides a resist base material containing a compound having a specific structure and/or a resin derived from the compound as a monomer.

First claim

The invention claimed is:

1. A resist composition comprising:
a solvent; and
a resist base material comprising a compound represented by the following formula (1) and/or a resin derived from the compound as a monomer

wherein R 1 is a 2n-valent group of 1 to 30 carbon atoms; R 2 to R 5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, or a hydroxyl group, wherein at least one selected from R 1 to R 5 is a group containing an iodine atom, and at least one of R 4 and/or at least one of R 5 is selected from a hydroxyl group and a thiol group; m 2 and m 3 are each independently an integer of 0 to 8; m 4 and m 5 are each independently an integer of 0 to 9, wherein m 4 and m 5 are not 0 at the same time; n is an integer of 1 to 4; and p 2 to p 5 are each independently an integer of 0 to 2.

2. The resist composition according to claim 1 , wherein at least one of R 2 and/or at least one of R 3 is selected from a hydroxyl group and a thiol group.

3. The resist composition according to claim 1 , wherein the compound represented by the formula (1) is a compound represented by the following formula (1a):

wherein R 1 to R 5 and n are as defined in claim 1 ; m 2′ and m 3′ are each independently an integer of 0 to 4; and m 4′ and m 5′ are each independently an integer of 0 to 5, wherein m 4′ and m 5′ are not 0 at the same time.

4. The resist composition according to claim 3 , wherein the compound represented by the formula (1a) is a compound represented by the following formula (1b):

wherein R 1 is a 2n-valent group of 1 to 30 carbon atoms; R 6 and R 7 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, or a thiol group, wherein at least one selected from R 1 , R 6 , and R 7 is a group containing an iodine atom; and m 6 and m 7 are each independently an integer of 0 to 7.

5. The resist composition according to claim 4 , wherein the compound represented by the formula (1b) is a compound represented by the following formula (1c):

wherein R 8 are each independently a hydrogen atom, a cyano group, a nitro group, a heterocyclic group, a halogen atom, a linear aliphatic hydrocarbon group of 1 to 20 carbon atoms, a branched aliphatic hydrocarbon group of 3 to 20 carbon atoms, a cyclic aliphatic hydrocarbon group of 3 to 20 carbon atoms, an aryl group of 6 to 20 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a thiol group, or a hydroxyl group, wherein at least one of R 8 is a group containing an iodine atom.

6. The resist composition according to claim 5 , wherein the compound represented by the formula (1c) is a compound represented by the following formula (1d):

wherein R 9 are each independently a cyano group, a nitro group, a heterocyclic group, a halogen atom, a linear aliphatic hydrocarbon group of 1 to 20 carbon atoms, a branched aliphatic hydrocarbon group of 3 to 20 carbon atoms, a cyclic aliphatic hydrocarbon group of 3 to 20 carbon atoms, an aryl group of 6 to 20 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a thiol group, or a hydroxyl group; and m 9 is an integer of 0 to 4.

7. The resist composition according to claim 1 , wherein the resin is a resin obtained by reacting the compound represented by the formula (1) with a compound having crosslinking reactivity.

8. The resist composition according to claim 7 , wherein the compound having crosslinking reactivity is an aldehyde, a ketone, a carboxylic acid, a carboxylic acid halide, a halogen-containing compound, an amino compound, an imino compound, an isocyanate, or an unsaturated hydrocarbon group-containing compound.

9. The resist composition according to claim 1 , wherein the resin has a structure represented by the following formula (2):

wherein R 1 is a 2n-valent group of 1 to 30 carbon atoms; R 2 to R 5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, or a hydroxyl group, wherein at least one selected from R 1 to R 5 is a group containing an iodine atom, and at least one of R 4 and/or at least one of R 5 is selected from a hydroxyl group and a thiol group; L is a linear or branched alkylene group of 1 to 20 carbon atoms or a single bond; m 2 and m 3 are each independently an integer of 0 to 8; m 4 and m 5 are each independently an integer of 0 to 9, wherein m 4 and m 5 are not 0 at the same time; n is an integer of 1 to 4; and p 2 to p 5 are each independently an integer of 0 to 2.

10. The resist composition according to claim 1 , further comprising an acid generating agent.

11. The resist composition according to claim 10 , further comprising an acid crosslinking agent.

12. A method for forming a resist pattern, comprising the steps of:
coating a substrate with the resist composition according to claim 10 , thereby forming a resist film;
exposing the formed resist film to radiation; and
developing the exposed resist film to form the resist pattern.

13. The resist composition according to claim 1 , further comprising an acid crosslinking agent.

14. A method for forming a resist pattern, comprising the steps of:
coating a substrate with the resist composition according to claim 1 , thereby forming a resist film;
exposing the formed resist film to radiation; and
developing the exposed resist film to form the resist pattern.

Assignees

• Mitsubishi Gas Chemical Co

Inventors

• Toida Takumi
• Echigo Masatoshi
• Sato Takashi
• Shimizu Youko

Classifications

• C08G83/00

  Macromolecular compounds not provided for in groups C08G2/00 - C08G81/00 · CPC title

• C07C39/15

  with all hydroxy groups on non-condensed rings {, e.g. phenylphenol} · CPC title

• C08L61/12

  with polyhydric phenols · CPC title

• C08G8/04 Primary

  of aldehydes · CPC title

• C07C2601/16

  the ring being unsaturated · CPC title