Electroluminescent device

Patent metadata

Field	Value
Publication number	US-10636993-B2
Application number	US-201515531404-A
Country	US
Kind code	B2
Filing date	Nov 20, 2015
Priority date	Nov 28, 2014
Publication date	Apr 28, 2020
Grant date	Apr 28, 2020

Abstract

Broadly speaking, embodiments of the present invention provide a solid state light-emitting device and a method of manufacturing the solid state light-emitting device. The method comprises preparing a thin layer of semiconducting perovskite nanoparticles embedded in a matrix or blend of a material that has a wider band gap than the semiconducting perovskite nanoparticles. In embodiments, the method comprises blending a solution of a semiconducting perovskite material or a precursor therefor with a solution of a material that has a wider band gap than the semiconducting perovskite material or a precursor therefor followed by removal of the solvent from the mixture thus formed, to give the semiconducting perovskite nanoparticles embedded in a matrix or blend of the material that has a wider band gap than the semiconducting perovskite nanoparticles.

First claim

The invention claimed is:

1. A method for the preparation of a thin layer of semiconducting perovskite nanoparticles embedded in a matrix or blend of a material that has a wider band gap than the semiconducting perovskite nanoparticles, the method comprising blending a solution comprising semiconducting perovskite material or a precursor therefor and a material that has a wider band gap than the semiconducting perovskite material or a precursor therefor followed by removal of the solvent from the mixture thus formed, to give said semiconducting perovskite nanoparticles embedded in a matrix or blend of the material that has a wider band gap than the semiconducting perovskite nanoparticles;
wherein the semiconducting perovskite comprises perovskite with an AMX 3 structure, where A is a monovalent cation, M is a divalent cation and X is a halide anion; and;
wherein the ratio by weight of semiconducting perovskite nanoparticles:the material that has a wider band gap than the semiconducting perovskite nanoparticles in which the semiconducting perovskite nanoparticles are embedded is from 0.01:1 to 2:1.

2. The method according to claim 1 , wherein the material that has a wider band gap than the semiconducting perovskite nanoparticles has a band gap of greater than 1.5 eV.

3. The method according to claim 1 , wherein the material that has a wider band gap than the semiconducting perovskite nanoparticles is selected from the group consisting of an insulating material and a semiconducting material.

4. The method according to claim 3 , wherein the insulating material is selected from an insulating polymer, an insulating organic molecule and an insulating inorganic material; including wherein the insulating polymer or insulating organic molecule is a polar polymer or a polar organic molecule;
wherein the insulating material is a polyimide, including a polyamic acid of benzophenone tetracarboxylic dianhydride 4,4-oxydianiline m-phenylenediamine polymer (PIP) having the following formula:

polystyrene; poly (9-vinylcarbazole), of the form:

the organic compound 4,4-bis(N-carbazolyl)-1,1-biphenyl, of the form:

or alumina.

5. The method according to claim 1 , wherein the thickness of the thin layer of semiconducting perovskite nanoparticles embedded in the matrix or blend of the material that has a wider band gap than the semiconducting perovskite nanoparticles is ≤500 nm.

6. The method according to claim 1 wherein:
the divalent cation M is:
a divalent metal cation, including tin (Sn 2+ ) or lead (Pb 2+ ); and/or

the monovalent cation A is:
a primary, secondary or tertiary ammonium cation [HNR 1 R 2 R 3 ] + , wherein each of R 1 , R 2 and R 3 may be the same or different and is selected from hydrogen, an unsubstituted or substituted C 1 -C 20 alkyl group and an unsubstituted or substituted C 5 -C 18 aryl group; and/or
of the form [R 1 R 2 N—CH═NR 3 R 4 ] + :

wherein each of R 1 , R 2 , R 3 and R 4 may be the same or different and is selected from hydrogen, an unsubstituted or substituted C 1 -C 20 alkyl group and an unsubstituted or substituted C 5 -C 18 aryl group; and/or
of the form (R 1 R 2 N)(R 3 R 4 N)C═NR 3 R 6 :

wherein each of R 1 R 2 , R 3 , R 4 , R 5 and R 6 may be the same or different and is selected from hydrogen, an unsubstituted or substituted C 1 -C 20 alkyl group and an unsubstituted or substituted C 5 -C 18 aryl group; and/or
an alkali metal cation, including caesium (Cs + ) or rubidium (Rb + ); and/or

X is:
a halide anion selected from chloride, bromide, iodide, and fluoride and, in the AMX 3 structure each halide may be the same or different.

7. The method according to claim 1 ,
wherein the perovskite material has an A 1-j B i MX 3 structure, wherein:
A and B are each a monovalent cation as claimed in claim 6 , where A and B are different;
M is a divalent metal cation as claimed in claim 6 ;
X is a halide anion as claimed in claim 6 ; and
i is between 0 and 1; or

wherein the perovskite material has an AMX 3-k Y k structure, wherein:
A is a monovalent cation as claimed in claim 6 ;
M is a divalent metal cation as claimed in claim 6 ;
X and Y are each a halide anion as claimed in claim 6 , where X and Y are different; and
k is between 0 and 3; or

wherein the perovskite material has an AM 1-j N j X 3 structure, wherein:
A is a monovalent cation as claimed in claim 6 ;
M and N are each a divalent metal cation as claimed in claim 6 ;
X is a halide anion as claimed in claim 6 ; and
j is between 0 and 1; or

wherein the perovskite material has an A 1-i B i M 1-j N j X 3-k Y k structure, wherein:
A and B are each a monovalent cation as claimed in claim 6 , where A and B are different;
M and N are each a divalent metal cation as claimed in claim 6 ;
X and Y are each a halide anion as claimed in claim 6 , where X and Y are different; and
where i is between 0 and 1, j is between 0 and 1, and k is between 0 and 3.

8. A thin layer of semiconducting perovskite nanoparticles embedded in a matrix or blend of a material that has a wider band gap than the semiconducting perovskite nanoparticles prepared according to the method as recited in claim 1 .

9. A solid state device including a thin layer of semiconducting perovskite nanoparticles embedded in a matrix or blend of a material that has a wider band gap than the semiconducting perovskite nanoparticles made according to the method of claim 1 .

10. The solid state device according to claim 9 , wherein the solid state device is a light emitting diode or a solar cell.

Assignees

• Cambridge Entpr Ltd
• King Abdulaziz City For Science & Tech

Inventors

• Friend Richard
• Tan Zhi Kuang
• Li Guangru
• Di Dawei
• Greenham Neil C

Classifications

• H01L51/5096 Primary

  Electricity · mapped topic

• Y02E10/549

  Organic PV cells · CPC title

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• H01L51/0077

  Electricity · mapped topic

• H01L51/0003

  Electricity · mapped topic