Perovskite Schottky Type Solar Cell
US-2015340632-A1 · Nov 26, 2015 · US
US9966198B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9966198-B2 |
| Application number | US-201514695273-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 24, 2015 |
| Priority date | Apr 24, 2014 |
| Publication date | May 8, 2018 |
| Grant date | May 8, 2018 |
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Solar cells are provided which comprise an electron transporting layer and a light sensitizing layer of perovskite disposed over the surface of the electron transporting layer. The perovskite may have a formula selected from the group consisting of A 2 MX 6 , Z 2 MX 6 or YMX 6 , wherein A is an alkali metal, M is a metal or a metalloid, X is a halide, Z is selected from the group consisting of a primary ammonium, an iminium, a secondary ammonium, a tertiary ammonium, and a quaternary ammonium, and Y has formula M b (L) 3 , wherein M b is a transition metal in the 2+ oxidation state L is an N—N neutral chelating ligand. Methods of making the solar cells are also provided, including methods based on electrospray deposition.
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What is claimed is: 1. A method of making a perovskite sensitizing layer, the method comprising electrospraying a solution comprising a perovskite on the surface of an electron transporting layer, and heating the perovskite sensitizing layer at a temperature for a time, wherein the perovskite sensitizing layer is formed on the surface of the electron transporting layer, wherein the perovskite has a formula selected from the group consisting of A 2 MX 6 , Z 2 MX 6 and YMX 6 , wherein A is an alkali metal, M is a metal or a metalloid, X is a halide, Z is selected from the group consisting of a primary ammonium, an iminium, a secondary ammonium, a tertiary ammonium, and a quaternary ammonium, and Y has formula M b (L) 3 , wherein M b is a transition metal in the 2+ oxidation state L is an N—N neutral chelating ligand. 2. A method of making a perovskite sensitizing layer, the method comprising: (a) exposing an electron transporting layer to a first solution comprising a first perovskite precursor to form a first coating on the surface of the electron transporting layer and heating the coated electron transporting layer at a first temperature for a first time; and (b) exposing the coated electron transporting layer to a second solution comprising a second perovskite precursor to form a second coating over the surface of the electron transporting layer and heating the coated electron transporting layer at a second temperature for a second time, wherein the perovskite sensitizing layer is formed on the surface of the electron transporting layer, wherein the perovskite has a formula selected from the group consisting of A 2 MX 6 , Z 2 MX 6 and YMX 6 , wherein A is an alkali metal, M is a metal or a metalloid, X is a halide, Z is selected from the group consisting of a primary ammonium, an iminium, a secondary ammonium, a tertiary ammonium, and a quaternary ammonium, and Y has formula M b (L) 3 , wherein M b is a transition metal in the 2+ oxidation state L is an N—N neutral chelating ligand. 3. The method of claim 2 , wherein the first perovskite precursor is selected from the group consisting of AX, ZX and YX 2 ; and further wherein the second perovskite precursor is MX 4 . 4. The method of claim 1 , wherein the perovskite has the formula A 2 MX 6 . 5. The method of claim 4 , wherein the electron transporting layer is a mesoporous electron transporting layer comprising nanostructures that define pores. 6. The method of claim 5 , wherein the perovskite sensitizing layer is sufficiently thin that it does not fill the pores of the electron transporting layer. 7. The method of claim 4 , wherein the perovskite comprises Cs 2 SnI 6 . 8. The method of claim 1 , wherein the perovskite has the formula Z 2 MX 6 . 9. The method of claim 1 , wherein the perovskite has the formula YMX 6 . 10. The method of claim 3 , wherein the perovskite has the formula A 2 MX 6 . 11. The method of claim 10 , wherein the electron transporting layer is a mesoporous electron transporting layer comprising nanostructures that define pores. 12. The method of claim 11 , wherein the perovskite sensitizing layer is sufficiently thin that it does not fill the pores of the electron transporting layer. 13. The method of claim 11 , wherein the first perovskite precursor has the formula AX and the second perovskite precursor has the formula MX 4 , wherein A is an alkali metal, M is a metal or a metalloid, and X is a halide. 14. The method of claim 13 , wherein AX is CsI, MX 4 is SnI 4 , and the perovskite is Cs 2 SnI 6 . 15. The method of claim 2 , wherein the electron transporting layer is a mesoporous electron transporting layer comprising nanostructures that define pores. 16. The method of claim 15 , wherein the perovskite sensitizing layer is sufficiently thin that it does not fill the pores of the electron transporting layer. 17. The method of claim 3 , wherein the perovskite has the formula Z 2 MX 6 . 18. The method of claim 17 , wherein the first perovskite precursor has the formula ZX and the second perovskite precursor has the formula MX 4 , wherein M is a metal or a metalloid, X is a halide, and Z is selected from the group consisting of a primary ammonium, an iminium, a secondary ammonium, a tertiary ammonium, and a quaternary ammonium. 19. The method of claim 3 , wherein the perovskite has the formula YMX 6 . 20. The method of claim 19 , wherein the first perovskite precursor has the formula YX 2 and the second perovskite precursor has the formula MX 4 , wherein M is a metal or a metalloid, X is a halide, and Y has formula M b (L) 3 , wherein M b is a transition metal in the 2+ oxidation state L is an N—N neutral chelating ligand.
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