Systems and methods for controlling a plasma edge region

Patent metadata

Field	Value
Publication number	US-10622190-B2
Application number	US-201615192397-A
Country	US
Kind code	B2
Filing date	Jun 24, 2016
Priority date	Nov 22, 2011
Publication date	Apr 14, 2020
Grant date	Apr 14, 2020

Abstract

Systems and methods for controlling a plasma edge region are described. One of the systems includes a top electrode and a bottom electrode. The system also includes an upper electrode extension and a lower electrode extension. At least a portion of the plasma edge region is formed between the upper electrode extension and the lower electrode extension. The system includes a circuit to control a radio frequency signal at the upper electrode extension.

First claim

What is claimed is:

1. A system for controlling a plasma edge region, comprising:
a radio frequency (RF) power source configured to generate a first RF signal;
a plasma chamber including:
a top electrode;
a bottom electrode situated below the top electrode and coupled to the RF power source for receiving the first RF signal;
one or more upper insulating rings surrounding a portion of the top electrode;
a lower insulating ring surrounding a portion of the bottom electrode;
an upper electrode extension surrounding a portion of the one or more upper insulating rings;
a lower electrode extension surrounding a portion of the lower insulating ring, wherein at least a portion of a plasma center region is formed between the top electrode and the bottom electrode, wherein at least a portion of the plasma edge region is formed between the upper electrode extension and the lower electrode extension; and

a control circuit having an active component coupled to the upper electrode extension, wherein the active component is configured to generate a second RF signal to provide to the upper electrode extension; and
a controller coupled to the active component and the RF power source to control amplitudes of the first and second RF signals to match a phase of a voltage at the upper electrode extension with a phase of a voltage that is applied from the bottom electrode via the lower insulating ring to the lower electrode extension.

2. The system of claim 1 , wherein the active component is a radio frequency source that is coupled to the upper electrode extension via a matching network, wherein the top electrode is coupled to ground.

3. The system of claim 1 , wherein the active component is a radio frequency source that is coupled to the upper electrode extension via a matching network and a coupling, wherein the top electrode is coupled to ground.

4. The system of claim 3 , wherein the matching network is configured to match an impedance of the radio frequency source with an impedance of the upper electrode extension and plasma.

5. The system of claim 1 , wherein the active component is a radio frequency source.

6. The system of claim 1 , wherein the plasma chamber includes:
a top cover;
a first layer located above and next to the upper electrode extension;
a second layer located above and next to the first layer,
wherein the active component is coupled to the upper electrode extension via a capacitor and a coupling, wherein the coupling extends via a passage formed within the top cover, the first layer, and the second layer to couple to the upper electrode extension.

7. The system of claim 6 , wherein the first layer is fabricated from dielectric, and the second layer includes a heater.

8. The system of claim 6 , wherein the passage is filled with a dielectric material to insulate the coupling from the second layer.

9. The system of claim 1 , wherein the plasma chamber includes:
a top cover;
a gas distribution plate located above and next to the top electrode;
a first layer located above and next to the gas distribution plate;
a second layer located above and next to the first layer,
wherein the top electrode is coupled to a ground potential via a coupling, wherein the coupling extends via a passage formed within the top cover, the first layer, and the second layer to couple to the top electrode.

10. The system of claim 9 , wherein the first layer is fabricated from dielectric, and the second layer includes a heater.

11. The system of claim 9 , wherein the passage is filled with a dielectric material to insulate the coupling from the second layer.

12. The system of claim 1 , wherein the control circuit includes a ground connection, wherein the top electrode is coupled to the ground connection.

13. A system for controlling a plasma edge region, comprising:
a control circuit having an active component coupled to an upper electrode extension, wherein the active component is configured to generate a first radio frequency (RF) signal to apply to the upper electrode extension that surrounds a top electrode of a plasma chamber, wherein the plasma edge region is formed between the upper electrode extension and a lower electrode extension of the plasma chamber, wherein the lower electrode extension surrounds a chuck that is coupled to an RF power source for receiving a second RF signal from the RF power source; and
a controller coupled to the active component and the RF power source to control amplitudes of the first and second RF signals to match a phase of a voltage at the upper electrode extension with a phase of a voltage that is applied from the chuck via a lower insulating ring to the lower electrode extension, wherein the lower insulating ring is located between the lower electrode extension and the chuck of the plasma chamber.

14. The system of claim 13 , wherein the active component is a radio frequency source coupled to the upper electrode extension via a matching network for applying the first RF signal to the upper electrode extension via the matching network, wherein the top electrode is coupled to ground.

15. The system of claim 13 , wherein the upper electrode extension is located below and next to a first layer, wherein the first layer is located below and next to a second layer, wherein the second layer is located next to and below a top cover of the plasma chamber, wherein the active component is coupled to the upper electrode extension via a capacitor and a coupling, wherein the coupling extends via a passage formed within the top cover, the first layer, and the second layer to couple to the upper electrode extension.

16. The system of claim 15 , wherein the first layer is fabricated from dielectric, and the second layer includes a heater.

17. The system of claim 15 , wherein the passage is filled with a dielectric material to insulate the coupling from the second layer.

18. The system of claim 13 , wherein the top electrode is located below and next to a gas distribution plate, wherein the gas distribution plate is located next to and below a first layer, wherein the first layer is located below and next to a second layer, wherein the second layer is located below and next to a top cover of the plasma chamber, wherein the top electrode is coupled to a ground potential via a coupling, wherein the coupling extends via the top cover, the first layer, and the second layer to couple to the top electrode.

19. The system of claim 18 , wherein the first layer is fabricated from dielectric, and the second layer includes a heater.

Assignees

• Lam Res Corp

Inventors

• Marakhtanov Alexei
• Dhindsa Rajinder

Classifications

• H01J37/32568

  Relative arrangement or disposition of electrodes; moving means · CPC title

• H01J37/32541

  Shape · CPC title

• H01J37/32623

  Mechanical discharge control means · CPC title

• H01J37/32183 Primary

  Matching circuits · CPC title

• H05B7/18 Primary

  Heating by arc discharge · CPC title