Nanoscale field-emission device and method of fabrication

Patent metadata

Field	Value
Publication number	US-10622181-B2
Application number	US-201815987645-A
Country	US
Kind code	B2
Filing date	May 23, 2018
Priority date	Feb 25, 2016
Publication date	Apr 14, 2020
Grant date	Apr 14, 2020

Abstract

Nanoscale field-emission devices are presented, wherein the devices include at least a pair of electrodes separated by a gap through which field emission of electrons from one electrode to the other occurs. The gap is dimensioned such that only a low voltage is required to induce field emission. As a result, the emitted electrons energy that is below the ionization potential of the gas or gasses that reside within the gap. In some embodiments, the gap is small enough that the distance between the electrodes is shorter than the mean-free path of electrons in air at atmospheric pressure. As a result, the field-emission devices do not require a vacuum environment for operation.

First claim

What is claimed is:

1. An apparatus including a first field-emission device, the first field-emission device comprising:
a substrate;
a first electrode disposed on the substrate, the first electrode having a tip whose radius of curvature is at least 20 nm;
a second electrode disposed on the substrate, the second electrode having a tip whose radius of curvature is at least 20 nm, wherein the first electrode and second electrode define a first gap having a first environment that is characterized by an ionization potential; and
a third electrode;
wherein the first electrode, second electrode, and third electrode are dimensioned and arranged such that (1) a first voltage between the first electrode and second electrode gives rise to a field-emission current between the first electrode and second electrode and (2) the magnitude of the field-emission current is based on a second voltage between the third electrode and one of the first and second electrodes;
wherein the first gap has a first separation that enables field emission of electrons from one of the first electrode and second electrode with an electron energy that is less than the ionization potential.

2. The apparatus of claim 1 wherein the first gap is less than 200 nanometers.

3. The apparatus of claim 1 wherein the first gap is less than or equal to 100 nanometers.

4. The apparatus of claim 1 further comprising a mixed-technology integrated circuit, wherein the mixed-technology integrated circuit includes a CMOS device and the first field-emission device.

5. The apparatus of claim 1 further comprising a first element that includes a first layer stack comprising the first electrode, the third electrode, and a first insulator that is located between the first electrode and the third electrode.

6. The apparatus of claim 5 further comprising a second element that includes a second layer stack comprising the second electrode, a fourth electrode, and a second insulator that is located between the second electrode and the fourth electrode, wherein first electrode, second electrode, third electrode, and fourth electrode are dimensioned and arranged such that the magnitude of the field-emission current is further based on a third voltage between the fourth electrode and one of the first and second electrodes.

7. The apparatus of claim 5 wherein each of the first and second electrodes comprises a semiconductor having a first free-carrier concentration when the magnitude of the second voltage is substantially zero, and wherein the semiconductor has a second free-carrier concentration that is lower than the first free-carrier concentration when the second voltage has a non-zero magnitude.

8. The apparatus of claim 1 wherein the apparatus includes a circuit that includes the first field-emission device and a second field-emission device that comprises:
a third electrode disposed on the substrate; and
a fourth electrode disposed on the substrate, wherein the third electrode and fourth electrode define a second gap having the first environment;
wherein the second gap has a second separation that enables field emission of electrons from one of the third electrode and fourth electrode with an electron energy that is less than the ionization potential.

9. The apparatus of claim 8 further comprising at least one plasmonic interconnect that operatively couples the first field-emission device and the second field-emission device.

10. An apparatus including a first field-emission device, the first field-emission device comprising:
a substrate;
a first electrode disposed on the substrate;
a second electrode disposed on the substrate, wherein the first electrode and second electrode are co-planar and define a first gap having a first environment;
a third electrode; and
a first element that includes a first layer stack comprising the first electrode the third electrode and a first insulator that is located between the first electrode and the third electrode;
wherein the first electrode, second electrode, and first gap are configured to enable a field-emission current between the first electrode and second electrode when the first environment is at atmospheric pressure; and
wherein magnitude of the field-emission current is based on a first voltage applied between the third electrode and one of the first and second electrodes.

11. The apparatus of claim 10 wherein the first gap is less than 200 nanometers.

12. The apparatus of claim 10 wherein the first gap is less than or equal to 100 nanometers.

13. The apparatus of claim 10 wherein each of the first electrode and second electrode comprises a metal.

14. The apparatus of claim 10 wherein each of the first electrode and second electrode comprises a doped semiconductor.

15. The apparatus of claim 10 wherein the first electrode comprises a first material having a first work function and the second electrode comprises a second material having a second work function that is different than the first work function.

16. The apparatus of claim 10 further comprising a second element, wherein the second element includes a second layer stack comprising the second electrode, a fourth electrode, and a second insulator that is located between the second electrode and the fourth electrode.

17. The apparatus of claim 1 further comprising a trace that is electrically conductive, the trace being electrically connected with the first field-emission device, wherein the trace is selected from the group consisting of a plasmonic interconnect and a CMOS integrated-circuit interconnect.

18. The apparatus of claim 10 wherein the first electrode has a first tip having a radius of curvature that is greater than 20 nm and less than infinity, and wherein the second electrode has a second tip that terminates at a substantially flat surface.

19. An apparatus including a circuit that comprises:
(1) a first field-emission device, the first field-emission device comprising:
(i) a substrate;
(ii) a first electrode disposed on the substrate, the first electrode having a tip whose radius of curvature is at least 20 nm; and
(iii) a second electrode disposed on the substrate, the second electrode having a tip whose radius of curvature is at least 20 nm, wherein the first electrode and second electrode define a first gap having a first environment that is characterized by an ionization potential;
wherein the first gap has a first separation that enables field emission of electrons from one of the first electrode and second electrode with an electron energy that is less than the ionization potential; and

(2) a second field-emission device that comprises:
(i) a third electrode disposed on the substrate; and
(ii) a fourth electrode disposed on the substrate, wherein the third electrode and fourth electrode define a second gap having the first environment;
wherein the second gap has a second separation that enables field emission of electrons from one of the third electrode and fourth electrode with an electron energy that is less than the ionization potential.

20. The apparatus of claim 19 further comprising at least one plasmonic interconnect that operatively couples the first field-emission device and the second field- emission device.

Assignees

• California Inst Of Techn

Inventors

• Scherer Axel
• Jones William M
• Lukin Danil M
• Walavalkar Sameer
• Chang Chieh-Feng

Classifications

• H01J9/025

  of field emission cathodes · CPC title

• H01J2209/0223

  Field emission cathodes · CPC title

• H01J21/105

  with microengineered cathode and control electrodes, e.g. Spindt-type · CPC title

• H01J21/02

  Tubes with a single discharge path · CPC title

• H01J19/24 Primary

  Cold cathodes, e.g. field-emissive cathode · CPC title