Resist underlayer film composition, patterning process, method for forming resist underlayer film, and compound for resist underlayer film composition

Patent metadata

Field	Value
Publication number	US-10620537-B2
Application number	US-201715621482-A
Country	US
Kind code	B2
Filing date	Jun 13, 2017
Priority date	Jul 7, 2016
Publication date	Apr 14, 2020
Grant date	Apr 14, 2020

Abstract

A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent,

W X) n   (1)

W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). “n” represents an integer of 1 to 10,

The dotted line represents a bonding arm. R 01 represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.

First claim

The invention claimed is:

1. A resist underlayer film composition for use in a multilayer resist method, comprising:
(A) an organic solvent; and
(B) one or more than one compound shown by the following general formula (1),
W x) n   (1)

wherein W represents an n-valent organic group having 2 to 50 carbon atoms; “n” represents an integer of 1 to 10; and X represents a monovalent organic group shown by the following general formula (1X),

wherein the dotted line represents a bonding arm; R 01 represents an acryloyl group or a methacryloyl group; Y represents a single bond or a carbonyl group; and Z is a group shown by the following general formula (1Z),

wherein the dotted line represents a bonding arm; Z 1 represents an (m+1)-valent aromatic group having 6 to 20 carbon atoms; and “m” represents an integer of 1 to 5.

2. A resist underlayer film composition for use in a multilayer resist method, comprising:
(A) an organic solvent; and
(B) one or more than one compound shown by the following general formula (1),
W X) n   (1)

wherein W represents an n-valent organic group having 2 to 50 carbon atoms; “n” represents an integer of 1 to 10; and X represents a monovalent organic group shown by the following general formula (1X),

wherein the dotted line represents a bonding arm; R 01 represents an acryloyl group or a methacryloyl group; Y represents a carbonyl group; and Z is a group shown by the following general formula (2Z):

wherein the dotted line represents a bonding arm; Z 2 represents an (r+1)-valent aromatic group having 6 to 10 carbon atoms; R Z represents a halogen atom, a hydroxyl group, a nitro group, or a monovalent organic group having 1 to 6 carbon atoms and optionally containing one or more atoms selected from the group consisting of an oxygen atom, a nitrogen atom, and a halogen atom; when a plurality of R Z are contained, the plurality of R Z are optionally bonded to each other to form a ring together with the carbon atoms bonded thereto; and “r” represents an integer of 0 to 5.

3. A resist underlayer film composition for use in a multilayer resist method, comprising:
(A) an organic solvent;
(B) one or more than one compound shown by the following general formula (1),
W x) n   (1)

wherein W represents an n-valent organic group having 2 to 50 carbon atoms, “n” represents an integer of 1 to 10, and X represents a monovalent organic group shown by the following general formula (1X),

wherein the dotted line represents a bonding arm, R 01 represents an acryloyl group or a methacryloyl group, Y represents a single bond or a carbonyl group, and Z represents a monovalent organic group having 1 to 30 carbon atoms; and
(A′) a compound shown by the following general formula (3),
W X 2 ) n   (3)

wherein W represents an n-valent organic group having 2 to 50 carbon atoms; and “n” represents an integer of 1 to 10, X 2 represents a monovalent organic group shown by the following general formula (3X),

wherein the dotted line represents a bonding arm; Y represents a single bond or a carbonyl group; and Z represents a monovalent organic group having 1 to 30 carbon atoms; R 02 represents an acryloyl group, a methacryloyl group, or a hydrogen atom, provided that at least a part of R 02 is a hydrogen atom.

4. The resist underlayer film composition according to claim 3 , wherein Z in the general formula (3X) is a group shown by the following general formula (1Z),

wherein the dotted line represents a bonding arm; Z 1 represents an (m+1)-valent aromatic group having 6 to 20 carbon atoms; and “m” represents an integer of 1 to 5.

5. The resist underlayer film composition according to claim 3 , wherein in the general formula (3X), Z is a group shown by the following general formula (2Z), and Y is a carbonyl group,

wherein the dotted line represents a bonding arm; Z 2 represents an (r+1)-valent aromatic group having 6 to 10 carbon atoms; R Z represents a halogen atom, a hydroxyl group, a nitro group, or a monovalent organic group having 1 to 6 carbon atoms and optionally containing one or more atoms selected from the group consisting of an oxygen atom, a nitrogen atom, and a halogen atom; when a plurality of R Z are contained, the plurality of R Z are optionally bonded to each other to form a ring together with the carbon atoms bonded thereto; and “r” represents an integer of 0 to 5.

6. The resist underlayer film composition according to claim 3 , wherein the compound shown by the general formula (3) comprises a compound shown by any one of the following general formulae (4-1) to (4-68),

wherein X 2 represents a monovalent organic group shown by the following general formula (3X),

wherein the dotted line represents a bonding arm; Y represents a single bond or a carbonyl group; and Z represents a monovalent organic group having 1 to 30 carbon atoms; R 02 represents an acryloyl group, a methacryloyl group, or a hydrogen atom, provided that at least a part of R 02 is a hydrogen atom.

7. A resist underlayer film composition for use in a multilayer resist method, comprising:
(A) an organic solvent; and
(B) one or more than one compound shown by the following general formula (1),
W X) n   (1)

wherein W represents an n-valent organic group having 2 to 50 carbon atoms, “n” represents an integer of 1 to 10, X represents a monovalent organic group shown by the following general formula (1X),

wherein the dotted line represents a bonding arm, R 01 represents an acryloyl group or a methacryloyl group, Y represents a single bond or a carbonyl group, and Z represents a monovalent organic group having 1 to 30 carbon atoms;

wherein the organic solvent of component (A) is a mixture of one or more organic solvents having a boiling point of lower than 180° C. and one or more organic solvents having a boiling point of 180° C. or higher.

8. A resist underlayer film composi

Assignees

• Shinetsu Chemical Co

Inventors

• Watanabe Takeru
• Kikuchi Rie
• Kori Daisuke
• Biyajima Yusuke
• Ogihara Tsutomu

Classifications

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P76/405 Primary

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/28

  of insulating materials · CPC title