Waveguide crossing having rib waveguides

Patent metadata

Field	Value
Publication number	US-10620371-B2
Application number	US-201615062091-A
Country	US
Kind code	B2
Filing date	Mar 5, 2016
Priority date	Mar 5, 2016
Publication date	Apr 14, 2020
Grant date	Apr 14, 2020

Abstract

A photonic platform includes a substrate, a buried oxide layer on the substrate, a first optical layer on the buried oxide layer, the first optical layer including one or more waveguides shaped as rib waveguides protruding upwardly from a common underlying slab and a second optical layer spaced above the first optical layer, the second optical layer defining an upper waveguide that crosses over the one or more partially etched waveguides. A low-loss photonic switch may be made using a silicon photonic platform implementing this waveguide crossing.

First claim

The invention claimed is:

1. A photonic platform comprising:
a substrate;
a buried oxide layer on the substrate;
a first optical layer on the buried oxide layer, the first optical layer disposed in a first plane and including a slab and one or more rib waveguides protruding upwardly from the slab; and
a second optical layer disposed in a second plane spaced above the first plane throughout an entirety of the second optical layer, the second optical layer defining an upper waveguide that crosses over the one or more rib waveguides;
wherein the first optical layer comprises first and second lateral waveguides disposed on opposite sides of the slab and optically coupled to opposite ends of the upper waveguide.

2. The platform of claim 1 wherein the first optical layer comprises a plurality of substantially parallel rib waveguides.

3. The platform of claim 1 wherein the first optical layer comprises tapered transitions extending under the upper waveguide laterally in opposite directions from the slab.

4. The platform of claim 1 wherein the upper waveguide is partially etched to define lateral portions extending from a central portion of the upper waveguide.

5. The platform of claim 4 wherein the lateral portions comprise tapered transitions aligned with the respective rib waveguides underneath.

6. The platform of claim 3 wherein the tapered transitions are triangular and aligned with the upper waveguide.

7. The platform of claim 3 wherein the tapered transitions are trapezoidal and disposed asymmetrically relative to the upper waveguide.

8. The platform of claim 1 wherein the first optical layer is made of silicon.

9. The platform of claim 1 wherein the second optical layer is made of silicon nitride.

10. A photonic platform comprising:
a substrate;
a buried oxide layer on the substrate;
a first optical layer on the buried oxide layer, the first optical layer disposed in a first plane and including a slab and one or more rib waveguides protruding upwardly from the slab;
a second optical layer disposed on a second plane spaced above the first plane throughout an entirety of the second optical layer, the second optical layer defining an upper waveguide that crosses over the one or more rib waveguides; and
an intermediate optical layer between the first and second optical layers, the intermediate optical layer comprising first and second intermediate waveguides for optically coupling the first and second lateral waveguides of the first optical layer to the respective opposite ends of the upper waveguide.

11. A photonic switch comprising:
a lower optical layer disposed in a first plane on a buried oxide layer supported by a substrate, the lower optical layer having one or more lower partially etched waveguides that form one or more rib waveguides on a common slab; and
an upper optical layer disposed in a second plane spaced above the first plane throughout an entirety of the upper optical layer and having an upper waveguide that traverses the one or more lower partially etched waveguides;
wherein the lower optical layer comprises first and second lateral waveguides disposed on opposite sides of the slab, the photonic switch further comprising an intermediate optical layer between the lower and upper optical layers, the intermediate optical layer comprising first and second intermediate waveguides for optically coupling the first and second lateral waveguides of the lower optical layer to respective opposite ends of the upper waveguide.

12. The switch of claim 11 wherein the lower optical layer comprises a plurality of parallel rib waveguides that are substantially orthogonal to the upper waveguide.

13. The switch of claim 12 wherein the lower optical layer comprises tapered transitions extending laterally from the slab under the upper waveguide.

14. A photonic waveguide crossing comprising:
a lower optical layer disposed in a first plane and in which is formed a lower rib waveguide; and
an upper optical layer disposed in a second plane in which is formed an upper waveguide traversing the lower waveguide, the second plane being spaced above the first plane throughout an entirety of the upper optical layer;
wherein the lower optical layer comprises first and second lateral waveguides disposed on opposite sides of the lower waveguide, the waveguide crossing further comprising an intermediate optical layer between the lower and upper optical layers, the intermediate optical layer comprising first and second intermediate waveguides disposed and configured for optically coupling the first and second lateral waveguides to respective opposite ends of the upper waveguide.

15. The waveguide crossing of claim 14 wherein the lower optical layer comprises a plurality of lower rib waveguides that are substantially orthogonal to the upper waveguide, wherein the lower optical layer comprises laterally extending tapered transitions aligned with the upper waveguide.

16. The waveguide crossing of claim 15 wherein the lower optical layer is silicon and the upper optical layer is silicon nitride.

17. The waveguide crossing of claim 14 wherein the upper waveguide is partially etched.

18. The waveguide crossing of claim 16 wherein the upper waveguide comprises tapered transitions aligned with the lower waveguide.

Assignees

• Huawei Tech Canada Co Ltd
• Governing Council Univ Toronto

Inventors

• Dumais Patrick
• Sacher Wesley David

Classifications

• G02B6/125 Primary

  Bends, branchings or intersections · CPC title

• G02B6/12002 Primary

  Three-dimensional structures · CPC title

• G02B2006/12061

  Silicon · CPC title

• G02B2006/12097

  Ridge, rib or the like · CPC title

• G02B6/1228

  Tapered waveguides, e.g. integrated spot-size transformers (for coupling with fibres G02B6/305) · CPC title