Cleaning compositions and methods of use therefor

Patent metadata

Field	Value
Publication number	US-10619126-B2
Application number	US-201615743529-A
Country	US
Kind code	B2
Filing date	Jul 14, 2016
Priority date	Jul 14, 2015
Publication date	Apr 14, 2020
Grant date	Apr 14, 2020

Abstract

The present disclosure is directed to non-corrosive cleaning compositions that are useful primarily for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.

First claim

What is claimed is:

1. A cleaning composition comprising:
a) HF;
b) at least one organic solvent in an amount of at least about 95 wt% of the composition;
c) at least one corrosion inhibitor selected from the group consisting of triazoles, aromatic anhydrides, and combinations thereof; and
d) water.

2. The composition of claim 1 , wherein the at least one organic solvent comprises a solvent selected from the group consisting of alcohols, ketones, ethers, and esters.

3. The composition of claim 1 , wherein the at least one organic solvent comprises a solvent selected from the group consisting of alcohols.

4. The composition of claim 3 , wherein the at least one organic solvent comprises an alkane diol.

5. The composition of claim 3 , wherein the at least one organic solvent comprises an alkylene glycol.

6. The composition of claim 5 , wherein the alkylene glycol is selected from the group consisting of ethylene glycol, propylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, and tetraethylene glycol.

7. The composition of claim 6 , wherein the alkylene glycol is dipropylene glycol.

8. The composition of claim 1 , wherein the at least one organic solvent comprises a solvent selected from the group consisting of ethers.

9. The composition of claim 8 , wherein the at least one organic solvent comprises a solvent selected from the group consisting of glycol ethers.

10. The composition of claim 9 , wherein the glycol ether is selected from the group consisting of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono n-propyl ether, ethylene glycol monoisopropyl ether, ethylene glycol mono n-butyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutylether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monobutyl ether, 1-methoxy-2-propanol, 2-methoxy-1-propanol, 1-ethoxy-2-propanol, 2-ethoxy-1-propanol, propylene glycol mono-n-propyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monobutyl ether, dipropylene glycol mono-n-propyl ether, tripropylene glycol monoethyl ether, tripropylene glycol monomethyl ether, ethylene glycol monobenzyl ether, and diethylene glycol monobenzyl ether.

11. The composition of claim 10 , wherein the glycol ether is tripropylene glycol monomethyl ether or dipropylene glycol monoethyl ether.

12. The composition of claim 1 , wherein the at least one organic solvent comprises a solvent selected from the group consisting of ketones.

13. A cleaning composition comprising:
a) HF;
b) at least one organic solvent;
c) at least one corrosion inhibitor selected from the group consisting of triazoles, aromatic anhydrides, and combinations thereof; and
d) water,
wherein the at least one organic solvent comprises a solvent selected from the group consisting of cyclic ketones.

14. The composition of claim 13 , wherein the cyclic ketone is cyclohexanone.

15. The composition of claim 1 , comprising at least two organic solvents.

16. A cleaning composition comprising:
a) HF;
b) at least two organic solvents;
c) at least one corrosion inhibitor selected from the group consisting of triazoles, aromatic anhydrides, and combinations thereof; and
d) water,
wherein the at least two organic solvents comprise cyclohexanone and dipropylene glycol.

17. The composition of claim 15 , wherein the at least two organic solvents comprise tripropyleneglycol methyl ether and diethyleneglycol ethyl ether.

18. The composition of claim 1 , wherein the at least one organic solvent comprises DMSO.

19. The composition of claim 1 , wherein the at least one corrosion inhibitor comprises a substituted or unsubstituted benzotriazole.

20. The composition of claim 19 , wherein the at least one corrosion inhibitor comprises a benzotriazole optionally substituted by at least one substituent selected from the group consisting of alkyl groups, aryl groups, halogen groups, amino groups, nitro groups, alkoxy groups, and hydroxyl groups.

21. The composition of claim 19 , wherein the substituted or unsubstituted benzotriazole is selected from the group consisting of benzotriazole, 5-aminobenzotriazole, 1-hydroxybenzotriazole, 5-phenylthiol-benzotriazole, 5-chlorobenzotriazole, 4-chlorobenzotriazole, 5-bromobenzotriazole, 4-bromobenzotriazole, 5-fluorobenzotriazole, 4-fluorobenzotriazole, naphthotriazole, tolyltriazole, 5-phenyl-benzotriazole, 5-nitrobenzotriazole, 4-nitrobenzotriazole, 3-amino-5-mercapto-1,2,4-triazole, 2-(5-amino-pentyl)-benzotriazole, 1-amino-benzotriazole, 5-methyl-1H-benzotriazole, benzotriazole-5-carboxylic acid, 4-methylbenzotriazole, 4-ethylbenzotriazole, 5-ethylbenzotriazole, 4-propylbenzotriazole, 5-propylbenzotriazole, 4-isopropylbenzotriazole, 5-isopropylbenzotriazole, 4-n-butylbenzotriazole, 5-n-butylbenzotriazole, 4-isobutylbenzotriazole, 5-isobutylbenzotriazole, 4-pentylbenzotriazole, 5-pentylbenzotriazole, 4-hexylbenzotriazole, 5-hexylbenzotriazole, 5-methoxybenzotriazole, 5-hydroxybenzotriazole, dihydroxypropylbenzotriazole, 1-[N,N-bis(2-ethylhexyl)aminomethyl]-benzotriazole, 5-t-butyl benzotriazole, 5-(1′,1′-diimethylpropyl)-benzotriazole, 5-(1′,1′,3′-trimethylbutyl)benzotriazole, 5-n-octyl benzotriazole, and 5-(1′,1′,3′,3′-tetramethylbutyl)benzotriazole.

22. The composition of claim 1 , wherein the at least one corrosion inhibitor comprises a benzoic anhydride, a phthalic anhydride, or 2-sulfobenzoic anhydride.

23. The composition of claim 1 , wherein the at least one corrosion inhibitor is in an amount of from about 0.05% to about 1% by weight of the composition.

24. The composition of claim 1 , wherein the water is in an amount of from about 0.5 wt% to about 2 wt% of the composition.

25. The composition of claim 1 , wherein the HF is in an amount of from about 0.05 wt% to about 1 wt% of the composition.

26. A method for cleaning a semiconductor substrate, comprising:
contacting the semiconductor substrate containing post etch residues or post ash residues with the cleaning composition of claim 1 .

27. The method of claim 26 , further comprising rinsing the semiconductor substrate with a rinse solvent after the contacting step.

28. An article formed by the method of claim 26 , wherein the article is a semiconductor device.

29. The article of claim 28 , wherein the semiconductor device is an integrated circuit.

30. The composition of claim 1 , wherein the composition comprises:
a) HF in an amount of from about 0.05 wt% to about 1 wt% of the composition;
b) at least one organic solvent in an amount of at least about 95 wt% of the composition;
c) at least one corrosion inhibitor selected from the group consisting of triazoles, aromatic anhydrides, and combinations thereof, the at least one corrosion inhibitor being in an amount of from about 0.05% to about 1% by weight of the composition; and
d) water in an amount of from about 0.5 wt% to about 2 wt% of the composition.

31. A composition, consisting of:
a) HF;
b) at least one organic solvent;
c) at least one corrosion inhibitor selected from the group consisting of triazoles, aromatic anhydrides, and combinations thereof; and
d) water.

32. The composition of claim 30 , wherein the at least one organic

Assignees

• Fujifilm Electronic Mat Usa Inc

Inventors

• Sugishima Yasuo
• Park Keeyoung
• Dory Thomas

Classifications

• H10P70/20

  Cleaning during device manufacture · CPC title

• C11D7/26

  containing oxygen · CPC title

• C11D7/247 Primary

  aromatic · CPC title

• C23G5/032 Primary

  containing oxygen-containing compounds · CPC title

• C11D7/5004

  Organic solvents · CPC title